G8370

PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm. Features Applications l Low noise, low dark current l Large active area l Various active area sizes available l Laser monitor l Optical power meter l Laser diode life test s Specifications / Absolute maximum ratings Dimensional outline/ Window material *1 ➀/K ➁/K ➂/K Active area (mm) φ1 φ2 φ3 φ5 Reverse voltage VR Max. (V) 10 5 2 Absolute maximum ratings Operating Storage temperature temperature Topr Tstg (°C) (°C) Type No. Package G8370-01 G8370-02 G8370-03 G8370-05 TO-18 TO-5 TO-8 -40 to +85 -55 to +125 s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Peak Spectral sensitivity response wavelength range λp Photo sensitivity S Dark current ID VR=1 V Cut-off Terminal frequency Shunt capacitance fc resistance Ct VR=1 V Rsh VR=1 V VR=10 mV RL=50 Ω f=1 MHz -3 dB (MHz) 35 *2 4 2 0.6 (pF) 90 *2 550 1000 3500 (MΩ) 100 25 10 3 D∗ λ=λp NEP λ=λp Type No. (µm) G8370-01 G8370-02 G8370-03 G8370-05 0.9 to 1.7 (µm) 1.55 1.3 µm λ=λp Typ. Max. (A/W) (A/W) (nA) (nA) 1 *2 5 *2 5 25 0.9 0.95 15 75 25 125 (cm ·H z 1/2 /W ) 5 × 1012 (W/Hz1/2) 2 × 10-14 4 × 10-14 6 × 10-14 1 × 10-13 *1: Window material K: borosilicate glass with anti-reflective coating (optimized for 1.55 µm peak) *2: VR=5 V 1 InGaAs PIN photodiode s Spectral response 1 (Typ. Ta=25 ˚C) G8370 series s Photo sensitivity temperature characteristic 2 (Typ. Ta=25 ˚C) TEMPERATURE COEFFICIENT (%/˚C) PHOTO SENSITIVITY (A/W) 1 0.5 0 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -1 0.8 1.0 1.2 1.4 1.6 1.8 WAVELENGTH (µm) KIRDB0002EB WAVELENGTH (µm) KIRDB0042EA s Photo sensitivity linearity 102 (Typ. Ta=25 ˚C, λ=1.3 µm, RL=2 Ω, VR=0 V) s Dark current vs. reverse voltage 1 µA (Typ. Ta=25 ˚C) RELATIVE SENSITIVITY (%) 100 G8370-01 100 nA G8370-05 G8370-03 G8370-02 98 G8370-02 96 DARK CURRENT 10 nA 1 nA 94 G8370-05 92 G8370-03 100 pA G8370-01 90 0 2 4 6 8 10 12 14 16 10 pA 0.01 0.1 1 10 100 INCIDENT LIGHT LEVEL (mW) KIRDB0245EA REVERSE VOLTAGE (V) KIRDB0246EA 2 InGaAs PIN photodiode s Terminal capacitance vs. reverse voltage (Typ. Ta=25 ˚C, f=1 MHz) G8370-05 G8370-03 G8370 series s Shunt resistance vs. ambient temperature (Typ. VR=10 mV) 10 nF 10 GΩ G8370-01 1 GΩ TERMINAL CAPACITANCE SHUNT RESISTANCE 1 nF G8370-02 100 MΩ G8370-02 G8370-03 100 pF G8370-01 10 pF 10 MΩ G8370-05 1 MΩ 1 pF 0.01 0.1 1 10 100 100 kΩ -40 -20 0 20 40 60 80 100 REVERSE VOLTAGE (V) KIRDB0247EA AMBIENT TEMPERATURE (˚C) KIRDB0248EA s Dimensional outlines (unit: mm) ➀ G8370-01 5.4 ± 0.2 4.7 ± 0.1 WINDOW 2.2 MIN. ➁ G8370-02/-03 9.2 ± 0.2 8.3 ± 0.1 2.5 ± 0.2 0.4 MAX. 0.45 LEAD 2.5 ± 0.2 13 MIN. 0.45 LEAD 5.1 ± 0.3 1.5 MAX. CASE CASE KIRDA0154EC 18 MIN. PHOTOSENSITIVE SURFACE 2.7 ± 0.2 PHOTOSENSITIVE SURFACE 4.9 ± 0.2 3.7 ± 0.2 WINDOW 4.5 MIN. KIRDA0155EB 3 InGaAs PIN photodiode ➂ G8370-05 13.8 ± 0.2 12.4 ± 0.1 G8370 series 0.45 LEAD 7.5 ± 0.2 INDEX MARK 1.0 CASE 14 MIN. PHOTOSENSITIVE SURFACE 0.5 2.8 ± 0.2 4.9 ± 0.2 WINDOW 7.0 MIN. KIRDA0052EC Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4 Cat. No. KIRD1050E03 Feb. 2002 DN