G8376

PHOTODIODE InGaAs PIN photodiode G8376 series Standard type InGaAs PIN photodiodes are NIR (near infrared) detectors that feature high-speed response and low noise. Various active area sizes are provided to meet wide applications. Features Applications l Low noise, low dark current l Low terminal capacitance l 3-pin TO-18 package l NIR (near infrared) photometry l Optical communication s Specifications / Absolute maximum ratings Active area (mm) φ0.04 φ0.08 φ0.3 φ0.5 Reverse voltage VR (V) Absolute maximum ratings Operating Storage temperature temperature Topr Tstg (°C) (°C) Type No. Window material Package G8376-01 G8376-02 G8376-03 G8376-05 B orosilicate glass with anti-reflective coating (optimized for 1.55 µ m peak) TO-18 20 -40 to +85 -55 to +125 s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Spectral response range Peak sensitivity wavelength λp (µm) 1.55 T er minal Cut-off Shunt frequency capacitance NEP resistance D∗ fc Ct Rsh λ=λp λ=λp VR=2 V VR=5 V VR=10 mV f=1 MHz RL=50 Ω -3 dB 1.3 µm λ=λp Typ. Max. (c m· Hz 1/2 / W) (W/Hz1/2) (MHz) (pF) (A/W) (A/W) (nA) (nA) (MΩ) 0.06 0.3 3000 0.5 10000 2 × 10-15 0.08 0.4 2000 1 8000 2 × 10-15 0.9 0.95 5 × 1012 400 * 5 1000 0.3 1.5 4 × 10-15 200 * 12 300 0.5 2.5 8 × 10-15 Photo sensitivity S Dark current ID VR=5 V Type No. (µm) G8376-01 G8376-02 G8376-03 G8376-05 * VR=5 V 0.9 to 1.7 1 InGaAs PIN photodiode s Spectral response 1 (Typ. Ta=25 ˚C) G8376 series (Typ. Ta=25 ˚C) s Photo sensitivity temperature characteristic 2 (Typ. Ta=25 ˚C) s Dark current vs. reverse voltage 10 nA TEMPERATURE COEFFICIENT (%/˚C) PHOTO SENSITIVITY (A/W) 1 nA G8376-03 G8376-05 1 DARK CURRENT G8376-02 100 pA G8376-01 10 pA 0.5 0 0 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -1 0.8 1.0 1.2 1.4 1.6 1.8 1 pA 0.01 0.1 1 10 100 WAVELENGTH (µm) KIRDB0002EB WAVELENGTH (µm) KIRDB0042EA REVERSE VOLTAGE (V) KIRDB0249EA s Terminal capacitance vs. reverse voltage 1 nF (Typ. Ta=25 ˚C, f=1 MHz) s Shunt resistance vs. ambient temperature 100 GΩ (Typ. VR=10 mV) G8376-01 G8376-02 10 GΩ G8376-05 G8376-03 10 pF TERMINAL CAPACITANCE SHUNT RESISTANCE 100 pF 1 GΩ 100 MΩ G8376-03 G8376-05 G8376-02 1 pF G8376-01 100 fF 0.01 10 MΩ 0.1 1 10 100 1 MΩ -40 -20 0 20 40 60 80 100 REVERSE VOLTAGE (V) KIRDB0250EA AMBIENT TEMPERATURE (˚C) KIRDB0251EA s Dimensional outline (unit: mm) 5.4 ± 0.2 4.7 ± 0.1 WINDOW 3.0 ± 0.1 2.6 ± 0.2 0.45 LEAD 2.5 ± 0.2 CASE KIRDA0150EB Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 13 MIN. PHOTOSENSITIVE SURFACE 3.7 ± 0.2 Cat. No. KIRD1051E03 Feb. 2002 DN 2