G8522

PHOTODIODE GaAs PIN photodiode G8522 series High-speed response at low reverse voltage G8522 series are high-speed PIN photodiodes developed for optical communications and are capable of GHz (gigahertz) operation even at a low reverse voltage (2 V or less). Please contact our sales office with your specific needs. Features Applications l High-speed response at low reverse voltage G8522-01: 3 GHz Min. (VR=2 V) G8522-02: 1.9 GHz Min. (VR=2 V) G8522-03: 1.5 GHz Min. (VR=2 V) l Low noise, low dark current l Low terminal capacitance l Optical fiber communications l Fiber channels l Gigabit Ethernet s Absolute maximum ratings (Ta=25 °C) Parameter Symbol Reverse voltage VR Max. Operating Topr temperature Storage Tstg temperature Value 30 -40 to +85 -55 to +125 Unit V °C °C s Electrical and optical characteristics (Ta=25 °C) Parameter Active area size Spectral response range Peak sensitivity wavelength Photo sensitivity Dark current Terminal capacitance Cut-off frequency Symbol λ λp S ID Ct fc λ=850 nm VR=5 V VR=2 V, f=1 MHz VR=2 V, RL=50 Ω λ=850 nm, -3 dB Condition Min. 0.45 3 G8522-01 Typ. Max. φ40 470 to 870 850 0.5 2 0.3 50 0.45 Min. 0.45 1.9 G8522-02 Typ. Max. φ80 470 to 870 850 0.5 8 0.45 200 0.65 0.45 1.5 Min. G8522-03 Typ. Max. φ120 470 to 870 850 0.5 20 0.8 500 1.2 Unit µm nm nm A/W pA pF GHz 1 GaAs PIN photodiode s Spectral response 0.6 (Typ. Ta=25 ˚C) G8522 series s Dark current vs. reverse voltage 100 pA (Typ. Ta=25 ˚C) PHOTO SENSITIVITY (A/W) 0.5 10 pA 0.4 DARK CURRENT 0.3 1 pA 0.2 100 fA 0.1 0 400 600 800 1000 10 fA 0.01 0.1 1 10 100 WAVELENGTH (nm) KGPDB0044EA REVERSE VOLTAGE (V) KGPDB0045EA s Terminal capacitance vs. reverse voltage 10 pF (Typ. Ta=25 ˚C) s Dimensional outline (unit: mm) 5.4 ± 0.2 4.6 ± 0.1 WINDOW 3.0 ± 0.2 2.7 ± 0.2 0.4 MAX. TERMINAL CAPACITANCE G8522-03 1 pF 0.45 LEAD G8522-02 G8522-01 2.54 ± 0.2 100 fF 0.01 0.1 1 10 100 REVERSE VOLTAGE (V) KGPDB0046EA 1.2 MAX. CASE KGPDA0015EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 13 MIN. PHOTOSENSITIVE SURFACE 3.6 ± 0.2 2 Cat. No. KGPD1008E01 Jan. 2002 DN