G8605-23

PHOTODIODE InGaAs PIN photodiode G8605 series Thermoelectrically cooled NIR (near infrared) detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise. G8605 series of InGaAs PIN photodiodes are thermoelectrically cooled types that decrease the dark current to achieve high D*. One-stage (-10 ˚C) and two-stage (-20 ˚C) thermoelectrically cooled types are provided. Features Applications l High-speed response l Low noise l Various active area sizes available from φ1 to φ5 mm l Optical power meter l Water content analyzer l Laser diode life test Accessories (Optional) s Specifications / Absolute maximum ratings Type No. Dim ensional ou tlin e/ Package W ind o w m aterial * Cooling Active area (mm) φ1 φ2 φ3 φ5 φ1 φ2 φ3 φ5 l Preamp for InGaAs PIN photodiode C4159-02 (High-speed type) l Preamp for InGaAs PIN photodiode C4159-03 (High sensitivity type) l Heatsink for one-stage TE-cooled type A3179 l Heatsink for two-stage TE-cooled type A3179-01 l Temperature controller for TE-cooled type C1103-04 Thermistor power dissipation (mW) Absolute maximum ratings TE-cooler Reverse Operating Storage allowable voltage temperature temperature Topr current Tstg VR Max. (A) (V) (°C) (°C) 5 5 1.5 5 2 -40 to +70 -55 to +85 5 5 1.0 5 2 G8605-11 G8605-12 G8605-13 G8605-15 G8605-21 G8605-22 G8605-23 G8605-25 ➀/K TO-8 ➁/K One-stage TE-cooled 0.2 Two-stage TE-cooled s Electrical and optical characteristics (Typ. unless otherwise noted) Cut-off Terminal Shunt D a rk curre nt freq ue ncy capacitance re sista nce D∗ fc Ct ID Rsh λ=λp VR=1 V VR=1 V VR=1 V Type No. VR=10 mV RL=50 Ω f=1 MHz 1.3 µ m λ= λp T yp . M ax. (MHz) (pF) (°C) (µm) (µm) (A /W ) (A /W ) (n A ) (n A ) (cm ·H z 1/2 /W ) (MΩ) G8605-11 0.07 0.35 18 150 1500 G8605-12 0.3 1.5 4 550 300 0.9 to 1.67 -10 2 × 1013 G8605-13 1 5 2 1000 100 G8605-15 2.5 12 .5 0.6 3500 30 1.55 0.9 0.95 G8605-21 0.03 0.15 18 150 3000 G8605-22 0.15 0.75 4 550 600 0.9 to 1.65 -20 3 × 1013 G8605-23 0.5 2.5 2 1000 200 G8605-25 0.6 3500 60 1.2 6 * Window material K: borosilicate glass with anti-reflective coating (optimized for 1.55 µm peak) Photo sensitivity S Measurem ent S pe ctra l P e ak condition respo nse sensitivity Element ran ge w avelength tem perature λ λp NEP λ=λp (W/Hz1/2) 5 × 10-15 1 × 10-14 2 × 10-14 3 × 10-14 3 × 10-15 7 × 10-15 1 × 10-14 2 × 10-14 1 InGaAs PIN photodiode s Spectral response 1 T=25 ˚C T= -10 ˚C T= -20 ˚C (Typ.) G8605 series s Photo sensitivity temperature characteristic 2 (Typ. Ta=25 ˚C) TEMPERATURE COEFFICIENT (%/˚C) PHOTO SENSITIVITY (A/W) 1 0.5 0 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -1 0.8 1.0 1.2 1.4 1.6 1.8 WAVELENGTH (µm) KIRDB0184EA WAVELENGTH (µm) KIRDB0042EA Spectral response shifts towards the short wavelength side when cooled. One-stage TE-cooled type: λc=1.67 µm Two-stage TE-cooled type: λc=1.65 µm s Photo sensitivity linearity 102 (Typ. Ta=25 ˚C, λ=1.3 µm, RL=2 Ω, VR=0 V) s Dark current vs. reverse voltage 1 µA (Typ.) RELATIVE SENSITIVITY (%) 100 G8605-11/-21 100 nA 98 G8605-12/-22 DARK CURRENT G8605-13 10 nA G8605-25 G8605-15 G8605-23 G8605-12 1 nA G8605-22 96 94 G8605-13/-23 G8605-15/-25 92 100 pA G8605-11 G8605-21 10 pA 0.01 90 0 2 4 6 8 10 12 14 16 0.1 1 10 100 INCIDENT LIGHT LEVEL (mW) KIRDB0241EA REVERSE VOLTAGE (V) KIRDB0242EB Applying a reverse voltage increases dark current, but improves frequency characteristics and output linearity. 2 InGaAs PIN photodiode s Terminal capacitance vs. reverse voltage (Typ. Ta=25 ˚C, f=1 MHz) 10 nF G8605-15/-25 G8605-13/-23 G8605 series (Typ. VR=10 mV) s Shunt resistance vs. element temperature 10 GΩ TERMINAL CAPACITANCE 1 GΩ SHUNT RESISTANCE 1 nF G8605-12/-22 100 pF G8605-11/-21 100 MΩ G8605-12/-22 G8605-11/-21 10 MΩ G8605-13/-23 G8605-15/-25 10 pF 1 MΩ 1 pF 0.01 0.1 1 10 100 100 kΩ -40 -20 0 20 40 60 80 REVERSE VOLTAGE (V) KIRDB0243EA ELEMENT TEMPERATURE (˚C) KIRDB0244EB In applications requiring high-speed response, the lead length should be as short as possible to minimize the terminal capacitance. s Thermistor temperature characteristic 10 6 s Cooling characteristics of TE-cooler 40 (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) (Typ.) ELEMENT TEMPERATURE (˚C) 20 ONE-STAGE TE-COOLED TYPE 0 RESISTANCE (Ω) 10 5 -20 10 4 TWO-STAGE -40 TE-COOLED TYPE 103 -40 -20 0 20 -60 0 0.4 0.8 1.2 1.6 ELEMENT TEMPERATURE (˚C) KIRDB0116EA CURRENT (A) KIRDB0231EA s Current vs. voltage characteristics of TE-cooler 1.6 1.4 1.2 ONE-STAGE TE-COOLED TYPE (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 TWO-STAGE TE-COOLED TYPE 0 0.2 0.4 0.6 0.8 1.0 1.2 VOLTAGE (V) KIRDB0115EB 3 InGaAs PIN photodiode s Dimensional outlines (unit: mm) ➀ G8605-11/-12/-13/-15 ➁ G8605-21/-22/-23/-25 15.3 ± 0.2 15.3 ± 0.2 14 ± 0.2 4.4 ± 0.2 6.4 ± 0.2 G8605 series 14 ± 0.2 6.7 ± 0.2 10 ± 0.2 12 MIN. WINDOW 10 ± 0.2 WINDOW 10 ± 0.2 12 MIN. PHOTOSENSITIVE SURFACE 0.45 LEAD 10.2 ± 0.2 5.1 ± 0.2 PHOTOSENSITIVE SURFACE 0.45 LEAD 10.2 ± 0.2 DETECTOR (ANODE) DETECTOR (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR 5.1 ± 0.2 DETECTOR (ANODE) DETECTOR (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR 5.1 ± 0.2 KIRDA0152EA 5.1 ± 0.2 KIRDA0153EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4 Cat. No. KIRD1049E02 Mar. 2004 DN