G8796-44

PHOTODIODE InGaAs PIN photodiode with preamp G8339/G8342/G7881/G8796 series Receptacle type, 1.3/1.55 µm, 156, 622 Mbps/1.25, 2.5 Gbps G8339/G8342/G7881/G8796 series are high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode and a high-speed preamp integrated in a receptacle module. Packages are available with various connectors and mounting styles. Features G8339 series (156 Mbps) : -37 to -5 dBm G8342 series (622 Mbps) : -32 to -5 dBm G7881 series (1.25 Gbps) : -25 to -1 dBm G8796 series (2.5 Gbps) : -22 to +1 dBm l Integrated with trans-impedance amplifier l Supply voltage G8339/G8342 series: 3.3 V G7881/G8796 series: 3.3 V, 5 V l Differential output Applications l Wide dynamic range l Optical fiber communications l Fiber channel l Gigabit Ethernet l HDTV l SDH s Absolute maximum ratings (Ta=25 °C) Parameter Symbol Supply voltage Vcc Operating temperature Topr Tstg Storage temperature G8339 series -0.3, +3.8 G8342 series -0.3, +3.8 G7881 series -0.3, +5.5 -20 to +70 -40 to +85 G8796 series -0.5, +6 Unit V °C °C s Specifications (Typ. Ta=25 °C, Vee=0 V, capacitive coupling, λ=1.31 µm, unless otherwise noted) G8339 series G8342 series G7881 series G8796 series Vcc=3.3 V Vcc=3.3 V Vcc=3.3/5 V Vcc=3.3/5 V Unit RL=500 Ω *1 RL=500 Ω *1 RL=50 Ω RL=50 Ω Photo sensitivity S *2, *3 27 17 2.8 1.2 V/mW Supply current Icc 25 30 35 35 mA dark state, RL=∞ Output bias voltage Vo 1.5 1.65 Vcc - 1.7 Vcc - 0.25 V dark state, RL=∞ Rise time tr *3, 20 to 80 % 2000 500 250 150 ps Data rate B 156 M 622 M 1.25 G 2.5 G bps L=50 Ω, so they should be used with a load resistance larger than 500 Ω. *1: G8339/G8342 series cannot be operated with R *2: Single ended (Vout+) measurement using a single mode optical fiber with a master plug. *3: G8339/G8342 series: Pin= -30 dBm G7881 series: Pin= -22 dBm G8796 series: Pin= -17 dBm Parameter Symbol Condition s Package lineup Parameter Mounting style Connector Dimensional outline -21 SC ➀ -22 Board FC ➁ G8339/G8342/G7881/G8796 -23 MU ➂ -32 Panel FC ➃ -44 Board & panel LC ➄ 1 InGaAs PIN photodiode with preamp G8339/G8342/G7881/G8796 series ➁ G8339/G8342/G7881/G8796-22 G8339/G8342/G8345-22 G7881-22 Vcc Vout Vee Vout + Vcc Vout + SECTION A/A ( 2.5) 2-56 UNC 2B 2 PLCS (DEPTH: 4) s Dimensional outlines (unit: mm, tolerance unless otherwise noted: ±0.2 mm) G8339/G8342/G8345-21 G7881-21 Vcc Vout Vee Vout + Vcc Vout + Vee Vout - ➀ G8339/G8342/G7881/G8796-21 Vout - 12.7 7.5 (11) 21.2 ± 0.4 ( 2.54) (11) A (4) A (5.2) Vee 0.45 ± 0.1 LEAD 3.0 0.7 ± 0.1 10.16 ( 2.54) 1.45 5.08 JIS C5973 SC RECEPTACLE 0.45 ± 0.1 LEAD 6.1 ± 0.1 9.2 ± 0.1 1.75 ± 0.1 11.55 ± 0.1 15.05 ± 0.3 JIS C5970 FC RECEPTACLE (3.5) G8339/G8342/G8345-32 G7881-32 Vcc Vout Vcc Vout + KIRDA0081EB M8 × 0.75 P 12.8 ± 0.1 9.5 ± 0.1 9.4 KIRDA0082EB ➂ G8339/G8342/G7881/G8796-23 G8339/G8342/G8345-23 G7881-23 Vcc Vout Vee Vout + Vcc Vout + Vee 19 -0.25 +0.05 Vee Vee ➃ G8339/G8342/G7881/G8796-32 Vout + Vout 2.0 ± 0.1 Vout (11) 12.0 20.5 ± 0.4 0.45 ± 0.1 LEAD ( 2.54) JIS C5970 FC RECEPTACLE 1.57 ± 0.1 8.5 6.5 (2 ×) 4.2 ± 0.1 0.45 ± 0.1 LEAD 3.0 0.7 ± 0.1 10.16 ( 2.54) 1.21 5.08 7.5 KIRDA0109EA KIRDA0083EB 1.0 ➄ G8339/G8342/G7881/G8796-44 s Pin connection Pin No. ➀ ➁ ➂ ➃ G8339/G8342/ G8796 Series Vcc Vout Vee Vout + G7881 Series Vcc Vout + Vee Vout - ANSI/TIA/EIA 604-10 LC RECEPTACLE 9.6 7.5 (11) (6.2) 0.45 ± 0.1 LEAD 3.0 0.7 ± 0.1 7.62 ( 2.54) 2.42 5.08 9.35 22.1 KIRDA0110EB Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 1.2 11.55 13.5 2 Cat. No. KIRD1030E04 Jan. 2002 DN M8 × 0.75 P 13.45 ± 0.1 7.95 ± 0.1 JIS C5983 MU RECEPTACLE 9.0 9.25 ± 0.1 (2 ×) 2.2 ± 0.1 (11) 7.5 5.5 ± 0.1