G8909-01

PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance: ±0.05 mm l DWDM monitor with AWG I General ratings Parameter Active area Pixel pitch Number of elements Symbol VR Max. Pin Max. Topr Tstg Remark Value f0.08 250 40 Value 6 10 -40 to +85 -40 to +85 Unit mm µm ch Unit V mV °C °C I Absolute maximum ratings Parameter Reverse voltage Allowable input power Operating temperature Storage temperature * In N environment or in vacuum Parameter Spectral response range Photo sensitivity Photo response non-uniformity Dark current Shunt resistance Terminal capacitance Cross-talk * I Electrical and optical characteristics (Ta=25 °C, per 1 element) Symbol l S PRNU ID Rsh Ct Condition l=1.31 µm l=1.55 µm VR=5 V VR=10 mV VR=5 V, f=1 MHz VR=0.1 V Min. 0.8 0.85 - Typ. 0.9 to 1.7 0.9 0.95 0.02 8 1.4 -33 Max. ±5 0.2 - Unit µm A/W % nA GW pF dB PRELIMINARY DATA Apr. 2002 1 InGaAs PIN photodiode array I Spectral response 1 (Typ. Ta=25 ˚C) G8909-01 I Dark current vs. reverse voltage 1 nA (Typ. Ta=25 ˚C) PHOTO SENSITIVITY (A/W) DARK CURRENT 0.8 1.0 1.2 1.4 1.6 1.8 2.0 100 pA 0.5 10 pA 0.6 1 pA 0.01 0.1 1 10 100 WAVELENGTH (µm) KIRDB0002EB REVERSE VOLTAGE (V) KIRDB0266EA I Terminal capacitance vs. reverse voltage 10 pF (Typ. Ta=25 ˚C, f=1 MHz) I Dark current vs. temperature 100 nA (Typ. VR=5 V) TERMINAL CAPACITANCE 10 nA 1 pF DARK CURRENT 0.1 1 10 100 1 nA 100 pA 100 fF 0.01 10 pA 20 30 40 50 60 70 80 REVERSE VOLTAGE (V) KIRDB0267EA TEMPERATURE (˚C) KIRDB0268EA I Cross-talk characteristic 100 (Typ. Ta=25 ˚C, λ=1.55 µm, SPOT= 20 µm, Pin=5 nW, VR=0.1 V) 250 µm RELATIVE SENSITIVITY (%) 10 1 0.1 0.01 -250 -200 -150 -100 -50 0 POSITION X (µm) KIRDB0269EA 2 InGaAs PIN photodiode array I Dimensional outline (unit: mm) ANODE PAD (PITCH: 400 µm, 40 ch, 150 × 150 µm BOND PADS) 22.0 (0.1) 2.1 0.5 0.4 0.8 G8909-01 CATHODE PAD 2.5 DETAIL a a 0.80 2.0 0.70 ± 0.05 * KIRDA0158EA 10.5 * The center of the active area to the bottom of the substrate Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2003 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KIRD1053E02 (0.15) Feb. 2003 DN 3