G8921-01

PHOTODIODE GaAs PIN photodiode array G8921-01 Photodiode array for data communication Features Element pitch: 250 µm 4-element array l High-speed response: 10 Gbps [(2.5 Gbps per channel) ×4] at low bias voltage (VR=2 V) l Low dark current, low capacitance l Up to 16 elements available as option Applications l Active area: φ0.06 mm l Optical fiber communications l High-speed data link I General ratings Parameter Active area Element pitch Number of elements Symbol Symbol VR Max. IR Max. Topr Tstg Remark Value f0.06 250 4 Value 30 0.5 -40 to +85 -55 to +125 Unit mm µm ch Unit V mA °C °C I Absolute maximum ratings Parameter Reverse voltage Reverse current Operating temperature Storage temperature * In N2 environment or in vacuum Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Dark current Terminal capacitance Cut-off frequency * I Electrical and optical characteristics (Unless other wise, Ta=25 °C, per 1 element) Symbol l lp S ID Ct fc Condition Min. 0.45 2 l=850 nm VR=5 V VR=2 V, f=1 MHz l=850 nm, VR=2 V, RL=50 W, -3 dB Typ. 470 to 870 850 0.5 2 0.35 - Max. 50 0.5 - Unit nm nm A/W pA pF GHz 1 GaAs PIN photodiode array I Spectral response 0.6 (Typ. Ta=25 ˚C) G8921-01 I Dark current vs. reverse voltage 100 pA (Typ. Ta=25 ˚C) PHOTO SENSITIVITY (A/W) 0.5 10 pA 0.4 0.3 DARK CURRENT 400 500 600 700 800 900 1000 1 pA 0.2 100 fA 0.1 0 300 10 fA 0.01 0.1 1 10 100 WAVELENGTH (nm) KGPDB0048EA REVERSE VOLTAGE (V) KGPDB0049EA I Terminal capacitance vs. reverse voltage 10 pF (Typ. Ta=25 ˚C) I Cross-talk characteristic 1000 (Typ. Ta=25 ˚C, λ=830 nm, step: 5 µm, Pin=20 nW, spot light size: 10 µm) RELATIVE SENSITIVITY (%) 100 n ch TERMINAL CAPACITANCE 10 n+1 ch 1 pF 1 0.1 0.01 100 fF 0.01 0.1 1 10 100 0.001 0 100 200 300 400 500 REVERSE VOLTAGE (V) KGPDB0050EA POSITION (µm) KGPDB0051EA I Dimensional outline (unit: mm) 0.2 ± 0.05 0.15 0.25 ANODE 6.4 CATHODE ACTIVE AREA 0.06 × 4 ch KGPDA0017EA 2.30 1.0 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KGPD1009E02 2 Jul. 2002 DN