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G9204-512D

G9204-512D

  • 厂商:

    HAMAMATSU

  • 封装:

  • 描述:

    G9204-512D - InGaAs linear image sensor - Hamamatsu Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
G9204-512D 数据手册
IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors, a CDS circuit, an offset compensation circuit, a shift register and a timing generator. These sensors deliver high sensitivity and stable operation in the near infrared spectral range. The package is hermetically sealed for high reliability and the window has an anti-reflective coating for efficient light detection. Signal processing circuits on the CMOS chip allow selecting a feedback capacitance (Cf) of 10 pF or 0.5 pF by supplying an external voltage. The image sensor operates over a wide dynamic range when Cf=10 pF and delivers high gain when Cf=0.5 pF. Features Applications l Wide dynamic range l Low noise and low dark current l Selectable gain l Anti-saturation circuit l CDS circuit *1 l Offset compensation circuit l Simple operation (by built-in timing generator) *2 l High resolution: 25 µm pitch (512 ch) l Low cross-talk l 256 ch: 1 video line 512 ch: 2 video lines l DWDM wavelength monitor l Optical spectrum analyzer Accessories (Optional) l InGaAs multichannel detector head C8061-01 *3 l Multichannel detector head controller C7557 *3 s Selection guide Type No. G 9 2 0 1-25 6 S G 9 2 0 2-51 2 S G 9 2 0 3-25 6 D * 4 G 9 2 0 3-25 6 S G 9 2 0 4-51 2 D * 4 G 9 2 0 4-51 2 S Cooling One-stage TE-cooled One-stage TE-cooled Non-cooled One-stage TE-cooled Non-cooled One-stage TE-cooled Number of pixels 256 512 256 512 Pixel pitch (µm) 50 25 50 25 Pixel size [µm (H) × µm (V)] 50 × 250 25 × 250 50 × 500 25 × 500 Spectral response range (µm) 0.9 to 1.67 (-10 °C) 0.9 to 1.67 (-10 °C) 0.9 to 1.7 (25 °C) 0.9 to 1.67 (-10 °C) 0.9 to 1.7 (25 °C) 0.9 to 1.67 (-10 °C) Defective pixel 0 *1: CDS (Correlated Double Sampling) circuit A major source of noise in charge amplifiers is the reset noise generated when the integration capacitance is reset. A CDS circuit greatly reduces this reset noise by holding the signal immediately after reset to find the noise differential. *2: Timing generator Different signal timings must be properly set in order to operate a shift register. In conventional image sensor operation, external PLDs (Programmable Logic Devices) are used to input the required timing signals. However, G9201 to G9204 series image sensors internally generate all timing signals on the CMOS chip just by supplying CLK and RESET pulses. This makes it simple to set the timings. *3: G9203-256D and G9204-512D are not available for C7557. *4: For G9203-256D and G9204-512D specifications, see the separate data sheets available from Hamamatsu. s Spectral response 1.0 T=25 ˚C T= -10 ˚C (Typ.) PHOTO SENSITIVITY (A/W) 0.5 0 0.5 1.0 1.5 2.0 WAVELENGTH (µm) KMIRB0011EA 1 InGaAs linear image sensor s Absolute maximum ratings Parameter Clock pulse voltage Operating temperature *5 Storage temperature *5 *5: Non condensation Symbol Vφ Topr Tstg G9201 to G9204 series Value 5.5 -40 to +70 -40 to +85 Unit V °C °C s Electrical characteristics (Ta=25 °C, Vφ=5 V ) Parameter Supply voltage Supply current Ground Element bias Element bias current Clock frequency Clock pulse voltage Clock pulse rise/fall times Clock pulse width Reset pulse voltage Reset pulse rise/fall times Reset pulse width Video output voltage Data rate high low high low high low Symbol Vdd Vref 256 ch I (Vdd) 512 ch I (Vref) Vss INP I (INP) f Vφ tr φ tf φ tpw φ V (RES) tr (RES) tf (RES) tpw (RES) VH VL fV Min. 4.9 3.5 0.1 Vφ - 0.5 0 0 200 Vφ - 0.5 0 0 6000 0 Typ. 5.0 1.26 45 90 1 Max. 0 4.5 1 Max. Vφ 0 20 Vφ 0 20 4.5 1.26 f/8 Max. 5.1 50 100 4.6 4 Vφ + 0.5 0.4 100 Vφ + 0.5 0.4 100 Unit V mA mA V V mA MHz V V ns ns V V ns ns V Hz s Electrical and optical characteristics General ratings (T=25 °C) Parameter Peak sensitivity wavelength Saturation charge *6 RMS noise voltage (readout noise) Photo response non-uniformity *7 Symbol λp Qsat N PRNU Condition Vp=5 V Standard deviation Number of integration: 50 Integration time: 10 msec Min. Typ. 1.55 30 180 Max. 300 ±5 Unit µm pC µVrms % V Saturation voltage Vsat 3.0 3.2 *6: Vφ=5 V, Cf=10 pF *7: 50 % of saturation, 10 ms integration time, after dark output subtraction, excluding first and last pixels. Dark current characteristics (T=25 °C) Parameter G9201 series G9202 series G9203 series G9204 series Symbol ID Min. Typ. 2 1 4 1 Max. 10 5 20 5 Unit pA 2 InGaAs linear image sensor s Equivalent circuit q 1 PIXEL ( G9201 to G9204 series ) Cf=10 pF Cf=0.5 pF SHIFT REGISTER CDS PHOTODIODE OFFSET COMPENSATION VIDEO AD-TRIG TIMING GENERATOR Vdd INP Vss CLK RESET Vref EXTERNAL INPUT KMIRC0010EB s Timing chart CLK (INPUT) RESET (INPUT) INTEGRATION 2 CLOCKS TIME 8 CLOCKS 8 CLOCKS TRIGGER (OUTPUT) VIDEO (OUTPUT) 8 × N CLOCKS (READOUT TIME) 10 CLOCKS MIN. 1 ch 2 ch (n-1) ch n ch s Basic circuit connection CLK RESET Vref Vdd Cf SELECT INP Vss VIDEO AD-TRIG BUFFER BUFFER KMIRC0016EB KMIRC0012EA 3 InGaAs linear image sensor s Dimensional outline (unit: mm) 63.5 ± 0.15 53.3 ± 0.15 38.1 ± 0.15 35.6 ± 0.15 28 15 27.2 ± 0.15 G9201 to G9204 series 25.4 ± 0.15 22.9 ± 0.15 10.2 ± 0.15 3.0 ± 0.15 12 INDEX MARK 14 20.3 ± 0.15 A A B B 1.0 ± 0.2 6.4 ± 1 ONE-STAGE TE-COOLED 6.15 3.6 (28 ×) 2.54 (28 ×) 0.46 KMIRA0010EB s Pin connection (top view) 256 PIXELS 512 PIXELS TE + Cf SELECT RESET TE AD-TRIG Vdd Vss INP CLK Vref VIDEO RESET-EVEN TE + AD-TRIG-EVEN THERM THERM CASE CLK-EVEN Cf SELECT RESET-ODD TE AD-TRIG-ODD Vdd Vss INP CLK-ODD THERM THERM CASE Vref VIDEO-EVEN VIDEO-ODD KMIRC0013EA Terminal name CLK RESET Vdd Vss INP Cf SELECT CASE THERM TE+, TEAD-TRIG VIDEO Vref Input/Output Function and recommended connection Input Clock pulse for operating the CMOS shift register (CMOS logic compatible) Input Reset pulse for initializing the feedback capacitance in the charge amplifier (CMOS logic compatible) formed on the CMOS chip. The width of the reset pulse is integration time. Input - Supply voltage for operating the signal processing circuit on the CMOS chip. Ground for the signal processing circuit on the CMOS chip. Reset voltage for the charge amplifier array on the CMOS chip. Voltage that determines the feedback capacitance (Cf) on the CMOS chip. Cf=10 pF at 0 V, and Cf=0.5 pF at 5 V. This terminal is electrically connected to the package. Thermistor for monitoring temperature inside the package. No connection for room temperature operation type. Power supply terminal for the thermoelectric cooler that cools the photodiode array. Digital signal for AD conversion; positive polarity Analog video signal; positive polarity Reset voltage for the offset compensation circuit on the CMOS chip Input Input - Output Output Input Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4 Cat. No. KMIR1012E05 May 2006 DN
G9204-512D
物料型号: - G9201-256S - G9202-512S - G9203-256D - G9203-256S - G9204-512D - G9204-512S

器件简介: 该系列传感器是专为光通信中监测WDM(波分复用)而设计的InGaAs线性图像传感器。这些传感器由InGaAs光电二极管阵列和CMOS晶体管构成的电荷放大器阵列组成,包括CDS电路、偏移补偿电路、移位寄存器和时序发生器。传感器在近红外光谱范围内提供高灵敏度和稳定操作,并且采用密封封装以确保高可靠性,窗口涂有防反射膜以提高光检测效率。

引脚分配: | 端口名称 | 输入/输出 | 功能及推荐连接 | | --- | --- | --- | | CLK | 输入 | 操作CMOS移位寄存器的时钟脉冲 | | RESET | 输入 | 初始化CMOS芯片上电荷放大器中的反馈电容的复位脉冲 | | Vdd | 输入 | 操作CMOS芯片上信号处理电路的供电电压 | | Vss | | 信号处理电路的接地 | | INP | 输入 | CMOS芯片上电荷放大器阵列的复位电压 | | Cf SELECT | 输入 | 确定CMOS芯片上的反馈电容(Cf)的电压。0V时Cf=10pF,5V时Cf=0.5pF | | CASE | | 该端口与封装电气连接 | | THERM | | 监测封装内温度的热敏电阻。室温操作类型无需连接 | | TE+, TE- | | 冷却光电二极管阵列的热电制冷器的电源端子 | | AD-TRIG | 输出 | AD转换的数字信号;正极性 | | VIDEO | 输出 | 模拟视频信号;正极性 | | Vref | 输入 | CMOS芯片上的偏移补偿电路的复位电压 |

参数特性: - 宽动态范围 - 低噪声和低暗电流 - 可变增益 - 反饱和电路CDS电路 - 偏移补偿电路

功能详解: - 信号处理电路允许通过外电压选择10pF或0.5pF的反馈电容。当Cf=10pF时,图像传感器具有宽动态范围;当Cf=0.5pF时,提供高增益。 - CDS电路可大幅降低电荷放大器复位噪声,通过在复位后立即保持信号来找到噪声差分。 - 时序发生器简化了移位寄存器的操作,通过提供CLK和RESET脉冲在CMOS芯片内部生成所有时序信号。

应用信息: - DWDM波长监测 - 光学频谱分析仪

封装信息: - 封装为密封型,以确保高可靠性,窗口有防反射涂层以提高光检测效率。
G9204-512D 价格&库存

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