G9230-01

PHOTODIODE InGaAs PIN photodiode G9230-01 Back-illuminated type, uses package with no wire Features Applications l Back-illuminated type l Easy to handle since there are no wires on chip (AnSn eutectic bonding) Optical fibers can be brought closer to the chip l Miniature package: 2 × 2 × 1 mm l High sensitivity: 0.95 A/W Typ. (λ=1.55 µm) l Precise chip position tolerance: ±0.075 mm l LD monitor l Optical fiber communication s General / Absolute maximum ratings Parameter Symbol Active area Reverse voltage VR Max. Operating temperature * Topr. Storage temperature * Tstg. * In N2 environment or in vacuum value φ0.3 10 -40 to +85 -40 to +85 Unit mm V °C °C s Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Photo sensitivity Dark current Shunt resistance Terminal capacitance Cut-off frequency Noise equivalent power Symbol λ S ID Rsh Ct fc NEP Condition λ=1.3 µm λ=1.55 µm VR=5 V VR=10 mV VR=5 V, f=1 MHz VR=5 V, RL=50 Ω λ=λp Min. 0.85 Typ. 0.95 to 1.7 0.85 0.95 0.3 1000 5 400 4 × 10-15 Max. 1.5 Unit µm A/W A/W nA MΩ pF MHz W/Hz1/2 1 InGaAs PIN photodiode s Spectral response 1.2 G9230-01 s Dark current vs. reverse voltage (Typ. Ta=25 ˚C) 10 nA (Typ. Ta=25 ˚C) PHOTO SENSITIVITY (A/W) 1.0 1 nA 0.8 DARK CURRENT 1 1.2 1.4 1.6 0.6 100 pA 0.4 10 pA 0.2 0 0.8 1.8 1 pA 0.01 0.1 1 10 100 WAVELENGTH (µm) KIRDB0287EA REVERSE VOLTAGE (V) KIRDB0288EA s Terminal capacitance vs. reverse voltage 100 (Typ. Ta=25 ˚C, f=1 MHz) TERMINAL CAPACITANCE (pF) 10 1 0.1 0.1 1 10 REVERSE VOLTAGE (V) KIRDB0289EA s Dimensional outline (unit: mm) ACTIVE AREA 0.3 ANODE 2.0 0.6 (0.5) (0.2) CATHODE 0.2 1.0 0.2 2.0 1.0 Tolerance unless otherwise noted: ±0.075 Values in parentheses indicate reference value. KIRDA0168EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 (0.5) (0.6) 2 Cat. No. KIRD1055E02 Dec. 2004 DN