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G9494-256D

G9494-256D

  • 厂商:

    HAMAMATSU

  • 封装:

  • 描述:

    G9494-256D - InGaAs linear image sensor - Hamamatsu Corporation

  • 数据手册
  • 价格&库存
G9494-256D 数据手册
IMAGE SENSOR InGaAs linear image sensor G9494-256D/-512D Near infrared image sensor (0.9 to 1.7 µm) with high-speed data rate HAMAMATSU provides high-speed, near infrared image sensors designed for detectors used in on-line foreign object inspection equipment. These image sensors use square-shaped pixels that are ideally suited for software processing in pattern recognition systems. The signal processing circuit employs CTIA (Capacitive Transfer Impedance Amplifier) method to perform simultaneous charge integration on all pixels, so there is no time lag among the pixel output signals. Features Applications G9494-256D: 50 × 50 µm G9494-512D: 25 × 25 µm l CMOS readout circuit incorporated l Low dark current l Room temperature operation s S e le c t io n g u id e Typ e N o . G 9 4 9 4 -2 5 6 D G 9 4 9 4 -5 1 2 D C o o lin g N o n - c o o le d l High-speed data rate: 2 MHz Typ. l Selectable conversion gain (Cf=0.1 pF, 1 pF) l Pixel size l Foreign object detection monitors l Near infrared spectroscopy N um ber of p ix e ls 256 512 P ix e l p itc h (µ m ) 50 25 P ix e l s iz e [ µ m (H ) × µ m ( V )] 50 × 50 25 × 25 S p e c tra l re s p o n s e ra n g e (µ m ) 0 .9 to 1 .7 (2 5 ° C ) D e fe c tiv e p ix e l L e s s th a n 1 % s A b s o lu te m a x im u m r a tin g s P a ra m e te r S u p p ly v o lta g e C lo c k p u ls e v o lta g e R e s e t p u ls e v o lta g e G a in s e le c tio n te rm in a l v o lta g e O p e ra tin g te m p e ra tu r e * 1 S to ra g e te m p e ra tu r e * 1 * 1 : N o c o n d e n s a tio n S ym bol Vdd Vφ V (R E S ) V c fS E L To p r T s tg V a lu e -0 .3 to + 6 - 0 .3 to + 6 -0 .3 to + 6 - 0 .3 to + 6 - 2 0 to + 7 0 - 2 0 to + 8 5 U n it V V V V °C °C s E le c tr ic a l c h a r a c te r is tic s ( Ta = 2 5 ° C ) P a ra m e te r G 9 4 9 4 -2 5 6 D G 9 4 9 4 -5 1 2 D S u p p ly v o lta g e G 9 4 9 4 -2 5 6 D S u p p ly c u rr e n t G 9 4 9 4 -5 1 2 D S u p p ly v o lta g e S u p p ly c u r re n t G ro u n d E le m e n t b ia s C lo c k fr e q u e n c y C lo c k p u ls e v o lta g e C lo c k p u ls e ris e / fa ll tim e s C lo c k p u ls e w id th R e s e t p u ls e v o lta g e R e s e t p u ls e ris e / fa ll tim e s R e s e t p u ls e w id th * 2 S ym bol Vdd V re f IV d d IV re f I IN P Vss IN P f H ig h Low Vφ tr φ , tf φ tp w φ H ig h Low V (R E S ) t r ( R E S ), tf (R E S ) tp w (R E S ) VH VL Zv H ig h V trig Low Va d fv M in . 4 .5 4 .5 3 .3 0 .1 4 .5 0 100 4 .5 0 6 /f 74HC244 1 ch - Typ . 5 .0 5 .0 1 .2 6 40 80 0 3 .5 2 5 .0 0 20 5 .0 0 20 3 .5 1 .2 6 5 Vdd GND f M a x. 5 .5 5 .5 75 150 1 1 3 .6 4 5 .5 0 .4 100 5 .5 0 .4 100 IN P - U n it V V mA mA mA V V MHz V ns ns V ns µs V kΩ V Hz V id e o o u tp u t v o lta g e V id e o o u tp u t im p e d a n c e A /D tr ig g e r v o lta g e A /D tr ig g e r d r iv e fu n c tio n D a ta r a te *2 : 6 µ s o r m o re H ig h Low 1 InGaAs linear image sensor G9494-256D/-512D Typ. 1.55 0.2 4 1 900 2 ±5 Max. 20 5 2000 ±20 1 Unit µm pC pA µV rms V % % s S pecification (Ta= 25 ° C , V dd= 5 V, IN P = 3.5 V, Vref= 1.26 V, C f= 0.1 pF, f= 2 M H z, integration tim e 200 µ s, per 1 elem ent) Parameter Peak sensitivity wavelength Saturation charge Dark current 256 ch 512 ch Symbol λp Qsat ID N Vsat PRNU Standard deriation Number of integration 50 Condition Vφ=5 V Min. - RMS noise voltage (readout noise) Saturation voltage Photo response non uniformity Detective pixel s Equivalent circuit q 1 PIXEL ( ) Cf=1 pF Cf=0.1 pF SHIFT REGISTER CDS PHOTODIODE OFFSET COMPENSATION CIRCUIT VIDEO AD-TRIG TIMING GENERATOR Vdd INP Vss Cf SELECT CLK RESET Vref EXTERNAL INPUT KMIRC0027EA s Basic circuit connection CLK RESET Vref Vdd Cf SELECT INP Vss VIDEO AD-TRIG BUFFER AMP BUFFER AMP KMIRC0012EA 2 InGaAs linear image sensor G9494-256D/-512D s Timing chart tr (clk) tf (clk) CLK t1 tr (RES) tf (RES) t2 RESET INTEGRATION TIME INTEGRATION TIME (ACCURACY) BLANK PERIOD AD_TIRG VIDEO 1 ch 2 ch 3 ch 4 ch 5 ch 253 ch 255 ch 252 ch 254 ch 256 ch KMIRC0025EB Note) More than 3 µs is required for a blank period from the last pixel to the rising edge of RESET pulse. Parameter Clock pulse frequency Clock pulse width Clock pulse rise / fall times Reset pulse width *3 Reset pulse rise / fall times Clock pulse to start pulse timing Video delay time *3: 6 µs or more Symbol tpw (clk) tr (clk), tf (clk) tpw (RES) tr (RES), tf (RES) t1, t2 tvd Min. 0.1 100 0 6/f 0 50 100 Typ. 2 20 20 Max. 4 100 100 Unit MHz ns ns µs ns ns ns s Spectral response 1.0 (Typ. T=25 ˚C) s Photo sensitivity temperature characteristics 120 70 ˚C (Typ.) RELATIVE SENSITIVITY (%) PHOTO SENSITIVITY (A/W) 100 30 ˚C 80 -10 ˚C 0.5 60 40 20 0 0.5 1.0 1.5 2.0 0 1.52 1.54 1.56 1.58 1.60 1.62 1.64 WAVELENGTH (µm) KMIRB0019EA WAVELENGTH (µm) KMIRB0020EA 3 InGaAs linear image sensor G9494-256D/-512D s Noise vs. temperature 2.0 (Typ. Vdd=5 V, INP=3.5 V, Vref=1.26 V, Cf=0.1 pF, Integration time 200 µs, Number of integrations 50) s Dark current vs. temperature 100 pA G9494-256D (Typ.) 1.5 10 pA 1.0 DARK CURRENT NOISE (mV rms) 1 pA G9494-512D 0.5 100 fA 0 -20 -10 0 10 20 30 40 50 60 70 10 fA -20 -10 0 10 20 30 40 50 60 70 TEMPERATURE (˚C) KMIRB0036EA TEMPERATURE (˚C) KMIRB0035EA s Dimensional outlines (unit: mm) G9494-256D 3.0 ± 0.3 CMOS AMP 2.1 ± 0.5 0.75 ± 0.08 1.3 ± 0.15 31.75 ± 0.3 22 21 13 12 10.45 ± 0.25 10.05 ± 0.25 INDEX MARK 12 ACTIVE AREA 10 11 AR COATED SAPPHIRE GLASS 0.95 ± 0.3 10.2 ± 0.25 2.54 25.4 ± 0.15 Pin No. 1 2 3 4 5 6 7 8 9 10 11 Pin connection NC NC NC NC NC NC NC NC NC NC NC Pin No. 12 13 14 15 16 17 18 19 20 21 22 Pin connection VIDEO Vref CLK NC INP Vss Vdd NC AD-TRIG RESET Cf-SELECT 4.0 ± 1.0 KMIRA0015EA 4 InGaAs linear image sensor G9494-256D/-512D G9494-512D 3.0 ± 0.3 CMOS AMP 31.75 ± 0.3 22 21 13 12 0.75 ± 0.08 1.0 ± 0.1 15.49 ± 0.25 15.11 ± 0.25 1 INDEX MARK 2 16.5-0.0 ACTIVE AREA +0.3 10 11 AR COATED SAPPHIRE GLASS 0.95 ± 0.3 2.54 ± 0.15 Pin No. 1 2 3 4 5 6 7 8 9 10 11 Pin connection Pin No. NC 12 RESET-EVEN 13 AD-TRIG-EVEN 14 NC 15 NC 16 NC 17 NC 18 NC 19 CLK-EVEN 20 NC 21 VIDEO-EVEN 22 15.24 ± 0.25 Pin connection VIDEO-ODD Vref CLK-ODD NC INP Vss Vdd NC AD-TRIG-ODD RESET-ODD Cf-SELECT “-EVEN” FOR EVEN No. PIXELS, “-ODD” FOR ODD No. PIXELS. KMIRA0016EA s Pin connection Terminal name CLK RESET Vdd Vss INP Cf SELECT Vref AD-TRIG VIDEO Input/Output Input (CMOS logic) Input (CMOS logic) Input Input Input Input Output Output Function and recommended connection Clock pulse for operating the CMOS shift register Reset pulse for initializing the feedback capacitance in the charge amplifier formed on the CMOS chip. The width of the reset pulse determines integration time. Supply voltage for operating the signal processing circuit on the CMOS chip Ground for the signal processing circuit on the CMOS chip Reset voltage for the charge amplifier array on the CMOS chip Voltage that determines the feedback capacitance (Cf) on the CMOS chip. Cf=0.1 pF at 0 V, and Cf=1 pF at 5 V Reset voltage for the offset compensation circuit at the CMOS chip Digital signal for AD conversion; positive polarity Analog video signal; positive polarity Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KMIR1014E03 Aug. 2007 DN 5
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