H8500B

FLAT PANEL TYPE MULTIANODE PHOTOMULTIPLIER TUBE ASSEMBLY H8500, H8500B 52 mm Square, Bialkali Photocathode, 12-stage, 8 × 8 Multianode, Small Dead Space, Fast Time Response APPLICATIONS G Small Animal Imaging G Compact Gamma Camera G Scinti-mammography G 2D Radiation Monitor SPECIFICATIONS GENERAL Parameter Spectral Response Peak Wavelength Photocathode Material Window Dynode Material Thickness Structure Number of Stages Description / Value 300 to 650 420 Bialkali Borosilicate glass 1.5 Metal channel dynode 12 64 (8 × 8 matrix) 5.8 × 5.8 / 6.08 49 × 49 52 × 52 × 28 89 140 (H8500), 117 (H8500B) 0 to +50 -15 to +50 Left: H8500, Right: H8500B Number of Anode Pixels Pixel Size / Pitch at Center Effective Area Dimensional Outline (W × H × D) Packing Density (Effective Area / External Size) Weight Operating Ambient Temperature Storage Temperature Unit nm nm — — mm — — — mm mm mm % g °C °C MAXIMUM RATINGS (Absolute Maximum Values) Parameter Supply Voltage (Between Anode to Cathode) Average Anode Output Current in Total Divider Current at -1100 V Value -1100 100 180 Unit V µA µA Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. FLAT PANEL TYPE MULTIANODE PHOTOMULTIPLIER TUBE ASSEMBLY H8500, H8500B CHARACTERISTICS (at 25 °C) Cathode Sensitivity Parameter Luminous A Blue Sensitivity Index (CS 5-58) B Quantum Efficiency at 420 nm Luminous C Min. 50 8.0 — — 0.5 × 106 — — — — — — — — Typ. 60 9.5 24 90 1.5 × 106 0.1 6 0.8 6 0.4 1 1: 2 3 Max. — — — — — — 50 — — — — 1: 4 — Unit µA/lm — % A/lm — nA nA ns ns ns mA — % Anode Sensitivity Gain C Anode Dark Current per Channel D Anode Dark Current in Total D Rise Time F Transit Time G Time Response E Transit Time Spread (FWHM) H Pulse Linearity per Channel (±2 % deviation) Uniformity (Condition Figure 3) Cross-talk NOTES A:The light source is a tungsten filament lamp operated at a distribution temperature of 2856 K. Supply voltage is 150 volts between the cathode and all other electrodes connected together as anode. B:The value is cathode output current when a blue filter(corning CS 5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as Note A. C:Measured with the same light source as Note A and with the anode-to-cathode supply voltage and voltage distribution ratio shown in Table 1 below. D:Measured with the same supply voltage and voltage distribution ratio as Note C after 30 minute storage in darkness. E:Those are test data when a signal from a central channel of 64 anodes is used, while all photocathode are illuminated by pulsed light source. F:The rise time is the time for the output pulse to rise from 10 % to 90 % of the peak amplitude when the whole photocathode is illuminated by a delta function light pulse. G:The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. In measurement, the whole photocathode is illuminated. H:Also called transit time jitter. This is the fluctuation in electron transit time between individual pulses in the single photoelectron event, and defined as the FWHM of the frequency distribution of electron transit time. Table 1: Voltage Distribution Ratio and Supply Voltage Electrodes K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11 Dy12 GR P Distribution Ratio 1 1 1 1 1 1 1 1 1 1 1 1 0.9 0.1 Supply Voltage: -1000 V, K: Cathode, Dy: Dynode, GR: Guard Ring P: Anode Figure 1: Typical Spectral Response 100 TPMHB0695ED Figure 2: Typical Gain Characteristics 107 TPMHB0696EC CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) 10 CATHODE RADIANT SENSITIVITY 106 1 QUANTUM EFFICIENCY GAIN 600 700 800 105 0.1 104 0.01 200 300 400 500 103 700 800 900 1000 1100 WAVELENGTH (nm) SUPPLY VOLTAGE (V) Figure 3: Anode Uniformity (Example) P1 68 83 97 98 95 96 81 75 93 100 98 99 98 94 77 72 88 94 93 87 83 76 62 64 90 95 86 79 71 66 60 62 79 91 82 75 69 65 58 63 71 82 85 81 72 63 54 59 86 89 86 86 77 66 58 65 P8 97 90 82 79 71 61 50 52 P64 P8 Figure 4: Anode Matrix and Separation Mark START MARK SEPARATION MARK ON FOCUSING ELECTRODE 52.0 ± 0.3 P1 P9 P17 P25 P33 23.12 P44 P49 P57 P2 P10 P18 P26 P34 P42 P50 P58 P3 P11 P19 P27 P35 P43 P51 P59 P4 P12 P20 P28 P36 P44 P52 P60 P5 P13 P21 P29 P37 P45 P53 P61 P6 P14 P22 P30 P38 P46 P54 P62 P7 P15 P23 P31 P39 P47 P55 P63 P8 P16 P24 P32 P40 P48 P59 P64 TOP VIEW SUPPLY VOLTAGE: -1000 V LIGHT SOURCE: TUNGSTEN LAMP with BLUE FILTER (DC LIGHT) SPOT ILLUMINATION (APERTURE SIZE): 6 mm square on each channel 6.26 6.08 6.08 6.08 6.08 6.08 6.08 6.26 EFFECTIVE AREA 49.0 TPMHB0697EC TOP VIEW The start mark and the separation marks are put on an electrode plate inside. TPMHB0708EB Figure 5: Dimensional Outline (Unit: mm) H8500 32.7 ± 1.0 27.4 ± 0.9 START MARK 14.4 ± 0.5 1.5 PHOTOCATHODE (EFFECTIVE AREA) 49 4 4 2 12 × 3=36 4.5 ± 0.3 2 H8500 P1 P2 P3 P4 P5 P6 P7 P8 P9 P10 P11 P12 P13 P14 P15 P16 6.08 × 6=36.48 52.0 ± 0.3 P33 P34 P35 P36 P37 P38 P39 P40 P41 P42 P43 P44 P45 P46 P47 P48 P49 P50 P51 P52 P53 P54 P55 P56 61, 54, 53 52, 51 GND 36 P25 P26 P27 P28 P29 P30 P31 P32 2 × 17=34 51.3 51.7 ± 0.5 -HV P17 P18 P19 P20 P21 P22 P23 P24 P57 P58 P59 P60 P61 P62 P63 P64 6.26 6.08 × 6=36.48 6.26 INSULATING TAPE PLASTIC BASE PC BOARD 450 ± 20 M3 DEPTH 5 4-SIGNAL OUTPUT CONNECTOR *B TMM-118-03-G-D, mfg. SAMTEC CONNECTION FOR SIGNAL CONNECTORS (BOTTOM VIEW) GND P7 GND P5 GND P3 GND P1 GND P8 GND P6 GND P4 GND P2 GND P15 GND P13 GND P11 GND P9 GND P16 GND P14 GND P12 GND P10 GND P23 GND P21 GND P19 GND P17 GND P24 GND P22 GND P20 GND P18 GND P31 GND P29 GND P27 GND P25 GND P32 GND P30 GND P28 GND P26 GND P39 GND P37 GND P35 GND P33 GND P40 GND P38 GND P36 GND P34 GND P47 GND P45 GND P43 GND P41 GND P48 GND P46 GND P44 GND P42 GND P55 GND P53 GND P51 GND P49 GND P56 GND P54 GND P52 GND P50 GND P63 GND P61 GND P59 GND P57 GND P64 GND P62 GND P60 GND P58 GND DY12 GND GND *A GND GND *A GND GND GND GND *A GND GND *A SIG4 SIG3 SIG2 SIG1 6.26 5 8, 7 3 14, 13, 6, 16, 15, 12, 11, 4, DY, 64, 63 60, 59 SIG4 SIG3 62 SIG2 6.26 TOP VIEW SIDE VIEW 0.5 -HV: SHV-P (COAXIAL CABLE, RED) NOTE *A: Polarized position of omitted pin *B: Suitable sockets for the signal connectors will be attached. The equivalent socket is SQT-118-01-L-D (SAMTEC). As it doesn't have a polarized position marker, it can be used at any positions. BOTTOM VIEW SIG1 58, 57, 50, 49 56, 55 10, 9, 2, 1 6.26 6.08 6.08 6.08 6.08 6.08 6.08 6.26 46.24 23.12 FLAT PANEL TYPE MULTIANODE PHOTOMULTIPLIER TUBE ASSEMBLY H8500, H8500B Figure 6: Dimensional Outline (Unit: mm) H8500B 32.7 ± 1.0 27.4 ± 0.9 START MARK 14.4 ± 0.5 1.5 PHOTOCATHODE (EFFECTIVE AREA) 49 4 -HV CONNECTOR *B TMM-102-03-G-S, mfg. SAMTEC 4 2 12 × 3=36 4.5 ± 0.3 2 H8500B P1 P2 P3 P4 P5 P6 P7 P8 P9 P10 P11 P12 P13 P14 P15 P16 6.08 × 6=36.48 52.0 ± 0.3 2 × 17=34 51.3 51.7 ± 0.5 12 4 2 P33 P34 P35 P36 P37 P38 P39 P40 P41 P42 P43 P44 P45 P46 P47 P48 P49 P50 P51 P52 P53 P54 P55 P56 61, 54, 53 GND 36 P25 P26 P27 P28 P29 P30 P31 P32 2 -HV P17 P18 P19 P20 P21 P22 P23 P24 P57 P58 P59 P60 P61 P62 P63 P64 6.26 6.08 × 6=36.48 6.26 INSULATING TAPE PLASTIC BASE PC BOARD 2 GND CONNECTOR *B TMM-102-03-G-S, mfg. SAMTEC 23.5 M3 DEPTH 5 4-SIGNAL OUTPUT CONNECTOR *B TMM-118-03-G-D, mfg. SAMTEC CONNECTION FOR SIGNAL CONNECTORS (BOTTOM VIEW) GND P7 GND P5 GND P3 GND P1 GND P8 GND P6 GND P4 GND P2 GND P15 GND P13 GND P11 GND P9 GND P16 GND P14 GND P12 GND P10 GND P23 GND P21 GND P19 GND P17 GND P24 GND P22 GND P20 GND P18 GND P31 GND P29 GND P27 GND P25 GND P32 GND P30 GND P28 GND P26 -HV GND P39 GND P37 GND P35 GND P33 -HV GND P40 GND P38 GND P36 GND P34 GND P47 GND P45 GND P43 GND P41 GND P48 GND P46 GND P44 GND P42 GND P55 GND P53 GND P51 GND P49 GND P56 GND P54 GND P52 GND P50 GND GND P63 GND P61 GND P59 GND P57 GND GND P64 GND P62 GND P60 GND P58 GND DY12 GND GND *A GND GND *A GND GND GND GND *A GND GND *A SIG4 SIG3 SIG2 SIG1 6.26 5 3 8, 7 14, 13, 6, 12, 11, 4, 16, 15, DY, 64, 63 60, 59 GND SIG4 SIG3 SIG2 6.26 TOP VIEW SIDE VIEW 0.5 BOTTOM VIEW NOTE *A: Polarized position of omitted pin *B: Suitable sockets for the signal connectors will be attached. The equivalent socket for signal output is SQT-118-01-L-D (SAMTEC). The equivalent socket for -HV, GND is SQT-102-01-L-S (SAMTEC). As it doesn't have a polarized position marker, it can be used at any positions. Figure 7: Internal Circuit (H8500, H8500B) P8 P7 P6 P5 P4 P3 P2 SIG1 K DY1 DY2 DY3 DY4 DY5 DY6 DY7 DY8 DY9 DY10 DY11 DY12 GR C7 P1 R21 R16 C1 R17 C2 R18 C3 R19 R1 R2 C8 C9 R3 R4 R5 R6 R7 R8 R9 (P49 to P56) ANODE OUTPUT (P57) ANODE OUTPUT (P58) (P9 to P16) TRANSISTOR CIRCUIT .... R20 ANODE OUTPUT (P59) ANODE OUTPUT (P60) ANODE OUTPUT (P61) ANODE OUTPUT (P62) ANODE OUTPUT (P63) -HV SHV-P (COAXIAL CABLE, RED) C8 C9 R20 R1 to R9: 470 kΩ R16 to R18: 51 Ω R19: 10 kΩ R20: 10 kΩ R21: 1 MΩ C1: 0.01 µF C2: 0.022 µF C3: 0.033 µF C7: 0.0047 µF C8, C9: 0.015 µF DIVIDER CURRENT 180 µA at -1100 V 4-(DOUBLE-ROW 2 mm Pitch) CONNECTOR H8500B -HV GND ANODE OUTPUT (P64) ...... SIGNAL GND DY12 OUTPUT ANODE OUTPUT (P1) ANODE OUTPUT (P2) ANODE OUTPUT (P3) ANODE OUTPUT (P4) ANODE OUTPUT (P5) ANODE OUTPUT (P6) ANODE OUTPUT (P7) ANODE OUTPUT (P8) 58, 62 P64 P63 P62 P61 P60 P59 P58 P57 57, 50, 49 56, 55 52, 51 10, 9, 2, 1 TPMHA0498ED WEB SITE www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it TPMH1282E09 OCT. 2006 IP