K1713-09

UV TO IR DETECTOR Two-color detector K1713-05/-08/-09 Wide spectral response range from UV to IR K1713 series incorporates an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis. Features Applications l Wide spectral response range l Allows same optical path design l 4-pin TO-5 package l Spectrophotometers l Laser monitors s General ratings / Absolute maximum ratings Detector element Si InGaAs Si InGaAs Si InGaAs Active area (mm) 2.4 × 2.4 φ0.5 2.4 × 2.4 φ1 2.4 × 2.4 φ1 Absolute maximum ratings Reverse Operating Storage voltage temperature temperature VR Topr Tstg (V) (°C) (°C) 5 20 5 -40 to +70 -55 to +85 2 5 10 Type No. Package Cooling K1713-05 K1713-08 K1713-09 TO-5 No-cooled s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Peak Photo Spectral sensitivity sensitivity response wavelength S range λp λ=λp (µm) K1713-05 K1713-08 K1713-09 Si InGaAs Si InGaAs Si InGaAs 0.32 to 1.7 0.32 to 2.6 0.32 to 1.7 (µm) 0.94 1.55 0.94 2.30 0.94 1.55 (A/W) 0.45 0.55 0.45 0.60 0.45 0.55 Dark current ID VR=10 mV Typ. (nA) 30 (pA) 0.5 *1 30 (pA) 15 (µA) *2 30 (pA) 1 *1 Max. (nA) 150 (pA) 2.5 *1 150 (pA) 75 (µA) *2 150 (pA) 5 *1 Shunt Resistance Rsh D* λ=λp Rise time Terminal tr capacitance VR=0 V Ct VR=5 V RL=1 kΩ 10 to 90 % f=1 MHz (ns) 200 *3 1.5 *4 200 *3 23 *4 200 *3 7 *4 (pF) 60 *5 12 60 *5 200 *2 60 *5 90 Type No. Detector element (MΩ) (cm · Hz1/2/W) 300 1.4 × 1013 300 3.5 × 1012 300 1.4 × 1013 3 (kΩ) 2.3 × 1010 300 1.4 × 1013 100 3.5 × 1012 *1: VR=5 V *2: VR=1 V *3: λ=655 nm *4: VR=5 V, RL=50 Ω *5: VR=0 V, f=10 kHz 1 Two-color detector s Spectral response Si photodiode 0.7 0.6 (Typ. Ta=25 ˚C) K1713-05/-08/-09 InGaAs PIN photodiode (Typ. Ta=25 ˚C) 0.7 0.6 PHOTO SENSITIVITY (A/W) 0.5 PHOTO SENSITIVITY (A/W) 0.5 0.4 0.3 K1713-05/-09 0.2 0.4 0.3 0.2 0.1 K1713-08 0.1 0 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 WAVELENGTH (µm) KIRDB0199EA WAVELENGTH (µm) KIRDB0211EA s Dark current vs. reverse voltage Si photodiode (Typ. Ta=25 ˚C) InGaAs PIN photodiode 100 µA (Typ. Ta=25 ˚C) 1 nA 10 µA K1713-08 DARK CURRENT DARK CURRENT 1 µA 100 pA 100 nA 10 nA K1713-09 1 nA K1713-05 10 pA 0.01 0.1 1 10 100 pA 0.01 0.1 1 10 100 REVERSE VOLTAGE (V) KIRDB0200EA REVERSE VOLTAGE (V) KIRDB0201EA 2 Two-color detector s Terminal capacitance vs. reverse voltage Si photodiode (Typ. Ta=25 ˚C, f=10 kHz) 10 nF K1713-05/-08/-09 InGaAs PIN photodiode (Typ. Ta=25 ˚C, f=1 MHz) 100 pF TERMINAL CAPACITANCE TERMINAL CAPACITANCE 1 nF K1713-08 100 pF K1713-09 10 pF 10 pF K1713-05 1 pF 1 pF 0.01 0.1 1 10 100 fF 0.01 0.1 1 10 100 REVERSE VOLTAGE (V) KIRDB0202EA REVERSE VOLTAGE (V) KIRDB0203EA s Shunt resistance vs. element temperature Si photodiode 10 TΩ 1 TΩ (Typ. VR=10 mV) InGaAs PIN photodiode (Typ. VR=10 mV) 100 GΩ 10 GΩ 1 GΩ SHUNT RESISTANCE 10 GΩ 1 GΩ SHUNT RESISTANCE 100 GΩ K1713-05 100 MΩ 10 MΩ 1 MΩ 100 kΩ 10 kΩ 1 kΩ 100 Ω -40 -20 0 20 40 60 80 100 K1713-08 K1713-09 100 MΩ 10 MΩ 1 MΩ 100 kΩ -40 -20 0 20 40 60 80 100 ELEMENT TEMPERATURE (˚C) KIRDB0204EA ELEMENT TEMPERATURE (˚C) KIRDB0205EA 3 Two-color detector s Dimensional outline (unit: mm) 9.1 ± 0.3 WINDOW 6.3 ± 0.1 Si 6.5 ± 0.3 8.3 ± 0.2 K1713-05/-08/-09 3.2 ± 0.3 0.43 LEAD 5.1 ± 0.2 Si (CATHODE) Si (ANODE) InGaAs (CATHODE) InGaAs (ANODE) 30 MIN. InGaAs 4.3 ± 0.3 KIRDA0147EB Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4 Cat. No. KIRD1040E03 May 2006 DN