L10596-02

Infrared LED L10596 series Small emission spot LED using current conned chip The L10596 is infrared LED with a microball lens cemented to the current con nement chip surface. This combination ensures narrow directivity and uniform emission. In particular, the L10596-02 uses a lens cap that delivers even narrower directivity. As a variant type not using a microball lens, the L10596-03 is also available with the LED chip potted with resin, which gives a small emission spot of φ160 m. The L10569 series has a light-re ecting layer inserted between the emission section and the GaAs substrate, which increases the light output by 1.5 times (L10596-03: 1.3 times) that of conventional products. Features High radiant output power: L10596/-02: 3.0 mW (IF=50 mA typ.) Uniform emission Small emission spot: L10596: φ400 m L10596-03: φ160 m Narrow directivity (L10596/-02) Applications Automatic control systems Optical switches Absolute maximum ratings (Ta=25 °C) Parameter Forward current Reverse voltage Pulse forward current Operating temperature Storage temperature Symbol IF VR IFP Topr Tstg Condition Value 80 3 0.45 -30 to +85 -40 to +100 Unit mA V A °C °C Pulse width=10 s Duty ratio=1% *1 *1: The L10596-03 is guaranteed to resist temperature cycle test of up to 5 cycles. Electrical and optical characteristics (Ta=25 °C) Parameter Peak emission wavelength Spectral half width Forward voltage Pulse forward voltage Reverse current Radiant ux Cut-off frequency*2 Symbol λp Δλ VF VFP IR φe fc Condition Min. 850 2.1 10 L10596 L10596-02 L10596-03 Typ. Max. Min. Typ. Max. Min. Typ. Max. 870 890 850 870 890 850 870 890 35 50 35 50 35 50 1.6 1.8 1.6 1.8 1.6 1.8 3.3 4.1 3.3 4.1 3.3 4.1 10 10 10 3.0 2.1 3.0 5.0 6.5 15 10 15 10 15 Unit nm nm V V A mW MHz IF=50 mA IF=50 mA IF=50 mA IF=0.45 A VR=3 V IF=50 mA IF=50 mA ± 10 mAp-p *2: Frequency at which the radiant output drops by 3 dB relative to the output at 100 kHz www.hamamatsu.com 1 Infrared LED L10596 series Emission spectrum 100 (Typ. Ta=25 °C, IF=50 mA) Radiant flux vs. forward current 100 (Typ. Ta=25 °C, tw=100 μs, 0.1%) 80 Relative radiant output (%) L10596-03 Radiant flux (mW) 10 60 40 L10596/-02 1 20 0 700 0.1 800 900 1000 1 10 100 1000 Wavelength (nm) KLEDB0304EA Forward current (mA) KLEDB0305EB Forward current vs. forward voltage 1000 (Typ. Ta=25 °C, tw=100 μs, 0.1%) Directivity 20° 30° 40° 50° 10° 0° 10° (Typ. Ta=25 °C) 20° 30° 40° 50° 60° L10596-02 70° L10596 80° L10596-03* 80° 90° 100 70° Forward current (mA) 100 60° 10 90° 100 80 60 40 20 0 20 40 60 80 Relative radiant output (%) 1 1.0 * L10596-03: Except for reflection ingredient of the base 1.5 2.0 2.5 3.0 3.5 Forward voltage (V) KLEDB0306EB KLEDB0307EB 2 Infrared LED L10596 series Radiant output vs. ambient temperature +1 (Typ. IF=50 mA) Allowable forward current vs. ambient temperature 0 Relative allowable forward current (%) 100 Relative radiant output (dB) 80 -1 60 40 -2 20 -3 -40 -20 0 20 40 60 80 100 0 -40 -20 0 20 40 60 80 100 Ambient temperature (°C) KLEDB0308EA Ambient temperature (°C) KLEDB0309EA Allowable forward current vs. duty ratio 10000 (Typ. Ta=25 °C) Allowable forward current (mA) 1000 Pulse width=1 μs Pulse width=10 μs 100 Pulse width=100 μs 10 0.01 0.1 1 10 100 Duty ratio (%) KLEDB0310EA 3 Infrared LED L10596 series Dimensional outlines (unit: mm) L10596 5.4 ± 0.2 4.7 ± 0.1 Glass window 3.0 ± 0.1 3.6 ± 0.2 L10596-02 5.4 ± 0.2 4.65 ± 0.1 L10596-03 2.3 ± 0.3 1.12 ± 0.1 2.54 ± 0.2 KLEDA0058EA 5.4 ± 0.1 Clear epoxy resin 4.2 ± 0.1 4.5 ± 0.2 6.65 ± 0.2 0.45 Lead 13.5 13.5 0.45 Lead 2.54 ± 0.2 0.45 Lead 2.54 ± 0.2 Common to case Common to case Common to case KLEDA0060EA KLEDA0059EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Type numbers of products listed in the specification sheets or supplied as samples may have a suffix “(X)” which means tentative specifications or a suffix “(Z)” which means developmental specifications. ©2010 Hamamatsu Photonics K.K. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 13.5 Cat. No. KLED1052E03 Jul. 2010 DN 4