L8446-04

CW LASER DIODES L8933 , L8446 , L8763 , L8828 SERIES Handling precautions & instructions 1. Absolute maximum ratings When LDs are driven exceeding its absolute maximum ratings, it will be broken instantly or it leads to degradation of performance & reliability. Please be careful not to exceed absolute maximum ratings even only a moment. The absolute maximum ratings in this datasheet are specified based on case temperature at 25 °C. When the operating temperature is higher, the radiant output power & dissipation will be reduced and it affects other characteristics. When designing the operating circuitry for LDs, please surely take absolute maximum ratings into account. 2. Protection of electrostatic discharge sensitive (ESDS) devices The LDs may be damaged or its performance may deteriorate due to such factors as electric field, electrostatic discharges (ESD), surge voltage, leakage voltage etc. As a countermeasure against ESD, the device, operator, work place and jigs must all be set at the same electric potential. When handling LDs, please wear conductive finger-cap. And please take following countermeasures ; (1) Install protection circuit for excess voltage, reverse voltage, surge voltage into power supply, measuring instrument etc. (2) When using soldering iron, protect LDs from leakage current & electrostatic discharge from soldering iron bit. (3) Conductive sheet, electrically grounded through 1Mohm resistor should be laid on both the work table and the floor of the working area. In order to protect the device from ESD which accumulate on the operator or the operator s clothes, ground electrically through 1Mohm resistor and wear a wrist strap etc. (4) Goods like parts, container to contact / approach to LDs should be materials which is taken a countermeasures for ESD. 3. Protection for stain, stress, external damage, etc. The LDs whose suffix -06 & -07 are bare type product, vital & fragile part is naked. Dusts, expiration, finger print, sputum, condensation bending, chip off of LD chip, re-forming of wire may leads to degradation of performance of the LDs. Please unpack, keep, handle, operate, drive in air-conditioned clean room so that the LDs are keep away from dust & condensation. When handling, please take enough care not to drop, not to stain any part of LDs. When dropped or stained, do not use it. 4. Heat dissipation Reliability of LDs is deeply correlated with junction temperature. Under higher operating temperature, the reliability deteriorates sooner. Heat dissipating device (material: Aluminum, Copper) should be attached to the base of LDs, and cooling devices (air, water, peltier etc.) should be operate with the LDs in order to dissipate the heat from the LDs, so that the operating temperature is kept within the absolute maximum ratings. 5. Safety for operators and users These LDs emit invisible laser radiation. It s classified into Class 4 according to the laser product standards of the IEC 60825-1 (Safety of laser products Part 1: Equipment classification, requirements and user s guide) and/or ANSI Z136.1 (American National Standard for Safe Use of Lasers) etc. Direct or reflected laser beam from these LDs may damage eyes or skin by being absorbed by cells. In the worst case, it leads to burn or loss of eyesight. The operator must not stare the emitting area of LDs, must avoid direct exposure to the laser beam. Wear eye-protectors (glasses or goggles) against laser radiation while operating a device. Please provide adequate information to the end-user of its classification, performances and warnings of the products using these LDs, defying the regulations of IEC 60825-1 and/or ANSI Z136.1 etc. CW LASER DIODES L8933 , L8446 , L8763 , L8828 SERIES PRELIMINARY DATA High optical power from a single chip FEATURES High optical power & high radiant flux density(CW) L8933 series : 0.5 W / 50 µm L8446 series : 1 W / 100 µm L8763 series : 1 W / 50 µm L8828 series : 2 W / 100 µm High stability Long life Compact APPLICATIONS Pumping source for solid state lasers Printing Medical instrument Measuring instrument Material Processing Marking HAMAMATSU CW laser diodes, L8933, L8446, L8763, L8828 series feature high optical power of 0.5 to 2.0 W under CW operation. As this is single chip and single element type, emitting area is small (50 µm to 100 µm X 1 µm). Therefore, it is easy to focus on to a small spot with optics. It can be used for various applications such as pumping of solid lasers, printers, medical instruments etc. http://www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Laser Group, Sales Dept. 5000, Hirakuchi, Hamakita City, Shizuoka, 434-8601, Japan, Telephone: (81)53-584-0227, Fax: (81)53-584-0228, E-mail: laser-g@lsr.hpk.co.jp U.S.A.: Hamamatsu Corporation:360 Foothill Road, P.O. BOX 6910, Bridgewater, N.J. 08807-0910, U.S.A.Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658, E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33(1) 69 53 71 00, Fax: 33(1) 69 53 71 10, E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777, E-mail: info@hamamatsu.co.uk Cat. No. LLD1010E01 North Europe: Hamamatsu Photonics Norden AB: Smidesv gen 12, SE-171-41 Solna, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01, E-mail: info@hamamatsu.se JAN. 2003 IP Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741, E-mail: info@hamamatsu.it Printed in Japan (500) Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. '2003 Hamamatsu Photonics K.K. CW LASER DIODES L8933 , L8446 , L8763 , L8828 SERIES ABSOLUTE MAXIMUM RATINGS (Top(c) = 25 °C) Parameter Radiant Output Power Reverse Voltage Operating Temperature Storage Temperature Symbol Φe Vr Top(c) Tstg Value L8933 0.6 L8446 1.2 2 0 to +30 -30 to +80 L8763 1.2 L8828 2.2 Unit W V °C °C SUFFIX / DIMENSIONAL OUTLINE (Unit : mm) Parameter Suffix L####-04 L####-41 L####-42 L####-06 L####-61 L####-62 L####-07 L####-71 L####-72 808 ± 5 808 ± 10 φ 9.0 CD 808 ± 3 808 ± 5 808 ± 10 Side-out OHS 808 ± 3 808 ± 5 808 ± 10 Head-out OHS Peak Emission Wavelength (nm) 808 ± 3 Package Dimensional Outline * φ9.0CD package is not available with 2W type L8288 series. Pigtailed type is available as custom option. Contact your local representative for details. Output CHARACTERISTICS (Top(c) = 25 °C) Parameter Radiant Output Power Forward Current Peak Emission Wavelength Spectral Radiation Half Bandwidth Forward Voltage Emitting Area Size Beam Spread Angle Parallel Vertical Symbol Φe If λp ∆λ Vf θ// θ⊥ Ith Value Conditions L8933 Φe = 0.5 W L8763 Φe = 1 W L8446 Φe = 1 W L8828 Φe = 2 W Value at designing FWHM 0.15 0.35 50 X 1 100 X 1 8 32 0.35 0.6 L8933 0.5 0.65 L8446 1 1.2 L8763 1 1.2 L8828 2 2.4 Unit W A nm nm V 50 X 1 100 X 1 φ 9.0 CD Package Glass Window LD Chip φ5.7±0.2 φ2.8±0.3 φ9.0 +0 -0.1 808 ± 3 , 808 ± 5 , 808 ± 10 *1 2 2 µm degree degree A L8933-04 , L8446-04 , L8763-04 L8933-41 , L8446-41 , L8763-41 L8933-42 , L8446-42 , L8763-42 Anode (Case) φ0.45 φ2.54 1.0 0.4 (Connection) Lasing Threshold Current *1 Tolerance of of peak emission wavelength can be selected from +/- 3nm, +/- 5nm and +/- 10nm for every type of laser diodes listed above. For its details, see the table of SUFFIX in the next page. Other laser diodes of different peak emission wavelength are available, such as 830nm, 940nm and 980nm. Contact your local representative for more information. Cathode NC 1.5 2.4 7.0±0.5 5.1±0.5 Anode Cathode 2 Figure 1: Radiant Output Power vs. Forward Current (Typ.) 2.5 ( Top(c) = 25 °C ) Figure 2: Emission Spectrum (Typ.) ( Top(c) = 25 °C ) 100 1 L8828 Radiant Output Power Φe (W) 2.0 Relative Radiant Output Power (%) 80 Side-out OHS Package Output 1.5 60 10 1.8 2.4 LD Chip Cathode Lead 5.8 1.5 0.15 L8763 L8446 1.0 L8933 0.5 40 3.8 (Connection) 9.45 9.4 8.8 0 0 0.5 1.5 1.0 2.0 Forward Current I f (A) 2.5 0 804 806 808 Wavelength (nm) 810 812 L8933-06 , L8446-06 , L8763-06 , L8828-06 L8933-61 , L8446-61 , L8763-61 , L8828-61 L8933-62 , L8446-62 , L8763-62 , L8828-62 7.8 20 φ3 6 Isolator Anode Block Anode Cathode Figure 3: Directivity (Typ.) 100 Parallel Direction Parallel Direction (Top(c) = 25 °C ) Vertical Direction Vertical Direction Head-out OHS Package 0.6 Isolator Relative Radiant Output Power (%) 80 2.0 5.0 LD Chip 2.0 2.0 1.0 1.0 Top View Side View Side View Parallel Direction Top View Vertical Direction 60 Top View Top View 0.15 40 Output (Connection) 5.0 8.0 20 Cathode Lead 0 40 30 20 10 0 10 Angle (degree) 20 30 40 L8933-07 , L8446-07 , L8763-07 , L8828-07 L8933-71 , L8446-71 , L8763-71 , L8828-71 L8933-72 , L8446-72 , L8763-72 , L8828-72 Anode Block φ2.2 6.0 2.4 Anode Cathode CW LASER DIODES L8933 , L8446 , L8763 , L8828 SERIES ABSOLUTE MAXIMUM RATINGS (Top(c) = 25 °C) Parameter Radiant Output Power Reverse Voltage Operating Temperature Storage Temperature Symbol Φe Vr Top(c) Tstg Value L8933 0.6 L8446 1.2 2 0 to +30 -30 to +80 L8763 1.2 L8828 2.2 Unit W V °C °C SUFFIX / DIMENSIONAL OUTLINE (Unit : mm) Parameter Suffix L####-04 L####-41 L####-42 L####-06 L####-61 L####-62 L####-07 L####-71 L####-72 808 ± 5 808 ± 10 φ 9.0 CD 808 ± 3 808 ± 5 808 ± 10 Side-out OHS 808 ± 3 808 ± 5 808 ± 10 Head-out OHS Peak Emission Wavelength (nm) 808 ± 3 Package Dimensional Outline * φ9.0CD package is not available with 2W type L8288 series. Pigtailed type is available as custom option. Contact your local representative for details. Output CHARACTERISTICS (Top(c) = 25 °C) Parameter Radiant Output Power Forward Current Peak Emission Wavelength Spectral Radiation Half Bandwidth Forward Voltage Emitting Area Size Beam Spread Angle Parallel Vertical Symbol Φe If λp ∆λ Vf θ// θ⊥ Ith Value Conditions L8933 Φe = 0.5 W L8763 Φe = 1 W L8446 Φe = 1 W L8828 Φe = 2 W Value at designing FWHM 0.15 0.35 50 X 1 100 X 1 8 32 0.35 0.6 L8933 0.5 0.65 L8446 1 1.2 L8763 1 1.2 L8828 2 2.4 Unit W A nm nm V 50 X 1 100 X 1 φ 9.0 CD Package Glass Window LD Chip φ5.7±0.2 φ2.8±0.3 φ9.0 +0 -0.1 808 ± 3 , 808 ± 5 , 808 ± 10 *1 2 2 µm degree degree A L8933-04 , L8446-04 , L8763-04 L8933-41 , L8446-41 , L8763-41 L8933-42 , L8446-42 , L8763-42 Anode (Case) φ0.45 φ2.54 1.0 0.4 (Connection) Lasing Threshold Current *1 Tolerance of of peak emission wavelength can be selected from +/- 3nm, +/- 5nm and +/- 10nm for every type of laser diodes listed above. For its details, see the table of SUFFIX in the next page. Other laser diodes of different peak emission wavelength are available, such as 830nm, 940nm and 980nm. Contact your local representative for more information. Cathode NC 1.5 2.4 7.0±0.5 5.1±0.5 Anode Cathode 2 Figure 1: Radiant Output Power vs. Forward Current (Typ.) 2.5 ( Top(c) = 25 °C ) Figure 2: Emission Spectrum (Typ.) ( Top(c) = 25 °C ) 100 1 L8828 Radiant Output Power Φe (W) 2.0 Relative Radiant Output Power (%) 80 Side-out OHS Package Output 1.5 60 10 1.8 2.4 LD Chip Cathode Lead 5.8 1.5 0.15 L8763 L8446 1.0 L8933 0.5 40 3.8 (Connection) 9.45 9.4 8.8 0 0 0.5 1.5 1.0 2.0 Forward Current I f (A) 2.5 0 804 806 808 Wavelength (nm) 810 812 L8933-06 , L8446-06 , L8763-06 , L8828-06 L8933-61 , L8446-61 , L8763-61 , L8828-61 L8933-62 , L8446-62 , L8763-62 , L8828-62 7.8 20 φ3 6 Isolator Anode Block Anode Cathode Figure 3: Directivity (Typ.) 100 Parallel Direction Parallel Direction (Top(c) = 25 °C ) Vertical Direction Vertical Direction Head-out OHS Package 0.6 Isolator Relative Radiant Output Power (%) 80 2.0 5.0 LD Chip 2.0 2.0 1.0 1.0 Top View Side View Side View Parallel Direction Top View Vertical Direction 60 Top View Top View 0.15 40 Output (Connection) 5.0 8.0 20 Cathode Lead 0 40 30 20 10 0 10 Angle (degree) 20 30 40 L8933-07 , L8446-07 , L8763-07 , L8828-07 L8933-71 , L8446-71 , L8763-71 , L8828-71 L8933-72 , L8446-72 , L8763-72 , L8828-72 Anode Block φ2.2 6.0 2.4 Anode Cathode CW LASER DIODES L8933 , L8446 , L8763 , L8828 SERIES Handling precautions & instructions 1. Absolute maximum ratings When LDs are driven exceeding its absolute maximum ratings, it will be broken instantly or it leads to degradation of performance & reliability. Please be careful not to exceed absolute maximum ratings even only a moment. The absolute maximum ratings in this datasheet are specified based on case temperature at 25 °C. When the operating temperature is higher, the radiant output power & dissipation will be reduced and it affects other characteristics. When designing the operating circuitry for LDs, please surely take absolute maximum ratings into account. 2. Protection of electrostatic discharge sensitive (ESDS) devices The LDs may be damaged or its performance may deteriorate due to such factors as electric field, electrostatic discharges (ESD), surge voltage, leakage voltage etc. As a countermeasure against ESD, the device, operator, work place and jigs must all be set at the same electric potential. When handling LDs, please wear conductive finger-cap. And please take following countermeasures ; (1) Install protection circuit for excess voltage, reverse voltage, surge voltage into power supply, measuring instrument etc. (2) When using soldering iron, protect LDs from leakage current & electrostatic discharge from soldering iron bit. (3) Conductive sheet, electrically grounded through 1Mohm resistor should be laid on both the work table and the floor of the working area. In order to protect the device from ESD which accumulate on the operator or the operator s clothes, ground electrically through 1Mohm resistor and wear a wrist strap etc. (4) Goods like parts, container to contact / approach to LDs should be materials which is taken a countermeasures for ESD. 3. Protection for stain, stress, external damage, etc. The LDs whose suffix -06 & -07 are bare type product, vital & fragile part is naked. Dusts, expiration, finger print, sputum, condensation bending, chip off of LD chip, re-forming of wire may leads to degradation of performance of the LDs. Please unpack, keep, handle, operate, drive in air-conditioned clean room so that the LDs are keep away from dust & condensation. When handling, please take enough care not to drop, not to stain any part of LDs. When dropped or stained, do not use it. 4. Heat dissipation Reliability of LDs is deeply correlated with junction temperature. Under higher operating temperature, the reliability deteriorates sooner. Heat dissipating device (material: Aluminum, Copper) should be attached to the base of LDs, and cooling devices (air, water, peltier etc.) should be operate with the LDs in order to dissipate the heat from the LDs, so that the operating temperature is kept within the absolute maximum ratings. 5. Safety for operators and users These LDs emit invisible laser radiation. It s classified into Class 4 according to the laser product standards of the IEC 60825-1 (Safety of laser products Part 1: Equipment classification, requirements and user s guide) and/or ANSI Z136.1 (American National Standard for Safe Use of Lasers) etc. Direct or reflected laser beam from these LDs may damage eyes or skin by being absorbed by cells. In the worst case, it leads to burn or loss of eyesight. The operator must not stare the emitting area of LDs, must avoid direct exposure to the laser beam. Wear eye-protectors (glasses or goggles) against laser radiation while operating a device. Please provide adequate information to the end-user of its classification, performances and warnings of the products using these LDs, defying the regulations of IEC 60825-1 and/or ANSI Z136.1 etc. CW LASER DIODES L8933 , L8446 , L8763 , L8828 SERIES PRELIMINARY DATA High optical power from a single chip FEATURES High optical power & high radiant flux density(CW) L8933 series : 0.5 W / 50 µm L8446 series : 1 W / 100 µm L8763 series : 1 W / 50 µm L8828 series : 2 W / 100 µm High stability Long life Compact APPLICATIONS Pumping source for solid state lasers Printing Medical instrument Measuring instrument Material Processing Marking HAMAMATSU CW laser diodes, L8933, L8446, L8763, L8828 series feature high optical power of 0.5 to 2.0 W under CW operation. As this is single chip and single element type, emitting area is small (50 µm to 100 µm X 1 µm). Therefore, it is easy to focus on to a small spot with optics. It can be used for various applications such as pumping of solid lasers, printers, medical instruments etc. http://www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Laser Group, Sales Dept. 5000, Hirakuchi, Hamakita City, Shizuoka, 434-8601, Japan, Telephone: (81)53-584-0227, Fax: (81)53-584-0228, E-mail: laser-g@lsr.hpk.co.jp U.S.A.: Hamamatsu Corporation:360 Foothill Road, P.O. BOX 6910, Bridgewater, N.J. 08807-0910, U.S.A.Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658, E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33(1) 69 53 71 00, Fax: 33(1) 69 53 71 10, E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777, E-mail: info@hamamatsu.co.uk Cat. No. LLD1010E01 North Europe: Hamamatsu Photonics Norden AB: Smidesv gen 12, SE-171-41 Solna, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01, E-mail: info@hamamatsu.se JAN. 2003 IP Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741, E-mail: info@hamamatsu.it Printed in Japan (500) Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. '2003 Hamamatsu Photonics K.K.