P2748

INFRARED DETECTOR MCT photoconductive detector P2748/P5274 series, P3257-50 Dewar type detector with high sensitivity and high-speed response in long wavelength range Features The band gap can be adjusted by controlling the composition ratio of HgTe and CdTe. Utilizing this fact, various types are available in different spectral characteristics. l Photoconductive element that decreases its resistance by input of infrared light l Micro-cooled type available This type of cooling does not require pour-filled liquid nitrogen. l Custom devices available Custom devices not listed in this catalog are also available with different spectral response, active area sizes and number of elements. Glass dewar type not requiring repumping is also provided. Applications l Choice of spectral response range (up to 25 µm) l FTIR l Infrared spectrophotometer l Thermal imaging l Remote sensing l CO2 laser detection Accessories (Optional) l Valve operator A3515 l Amplifiers for dewar type MCT photoconductive detector C5185 l Power supply for amplifier C3871 l Infrared detector module with preamp P7752-10 Absolute maximum ratings Allowable Operating Storage current temperature temperature Topr Tstg (mA) (°C) (°C) 40 40 -40 to +60 -55 to +60 20 40 20 40 -40 to +55 -45 to +55 I General rating / Absolute maximum ratings Type No. P2748-40 P2748-41 P2748-42 P5274 P5274-01 P3257-50 Dimensional outline/ Window material * ➀/Z ➁/Z ➀/Z ➀/K ➂/Z Package Side-on type metal dewar Head-on type metal dewar Side-on type metal dewar Stirling type metal Nitrogen maintenance Active area time Cooling Min. (h) (mm) 1×1 1×1 LN 12 0.25 × 0.25 1×1 1×1 Micro-cooled 1×1 - I Electrical and optical characteristics (Typ. unless otherwise noted) Measurement Peak Photo condition Cut-off sensitivity sensitivity *2 Element wavelength wavelength S temperature lc l=lp lp T (°C) (µm) (µm) (V/W) 1000 1000 10000 500 250 1000 D* (500, 1200, 1) D* (lp, 1200, 1) NEP l=lp Rise Dark time resistance tr 0 to 63 % Rd Type No. (µs) (W ) P2748-40 P2748-41 2 × 1010 4.0 × 1010 0.6 40 12 14 1 × 1010 P2748-42 -196 P5274 14 17 2 × 109 1 × 1010 1.5 × 1010 0.6 30 9 9 P5274-01 17 22 1 × 10 5 × 10 1.0 × 1010 0.4 100 P3257-50 2 × 1010 4.0 × 1010 0.6 40 12 14 1 × 1010 *1: Window material K: KRS-5, Z: ZnSe *2: Photo sensitivity changes with the bias current. The values in the above table are measured with the optimum bias current. Min. Typ. (cm· Hz1/2/W) (cm· Hz1/2/W) (cm· Hz1/2/W) (W/Hz1/2) 2.5 × 10-12 2.5 × 10-12 6.3 × 10-12 6.7 × 10-12 1.0 × 10-11 2.5 × 10-12 1 MCT photoconductive detector I Spectral response 10 11 P2748/P5274 series, P3257-50 I S/N vs. bias current (Typ. T= -196 ˚C) P2748-40 20 D* 16 (Typ.) D* (cm · Hz 2 /W) 1010 RELATIVE VALUE P5274 1 12 S 8 10 9 P5274-01 4 N 108 0 5 10 15 20 25 0 5 10 15 20 25 WAVELENGTH (µm) KIRDB0072EC BIAS CURRENT (mA) KIRDB0073EB Spectral response can be shifted upon request. The detector must be operated in a range where the D* becomes Max. I Noise frequency characteristic 100 (Typ. ) I Measurement circuit CHOPPER 1200 Hz BAND-PASS FILTER r.m.s. METER NOISE (nV/Hz 2 ) DETECTOR BLACK BODY 500 K fo=1200 Hz ∆f=120 Hz INCIDENT ENERGY: 2.64 µW/cm2 1 10 KIRDC0007EA 1 10 100 1000 10000 FREQUENCY (Hz) KIRDB0074EC 2 MCT photoconductive detector I Dimensional outlines (unit: mm) ➀ P2748-40/-42, P5274 series LN2 FILL PORT 12.5 P2748/P5274 series, P3257-50 51 ± 1 32 ± 1 63.5 ± 1 28.5 PUMP-OUT PIPE 9.5 43 ± 1 46 ± 1 72 ± 1 102 ± 1 95 ± 1 SIGNAL OUTPUT LEAD 172 ± 2 PHOTOSENSITIVE SURFACE 37 ± 1 6.5 8.5 ± 0.5 66.8 ± 1 DETECTOR NC DETECTOR KIRDA0131EC ➁ P2748-41 LN2 FILL PORT 12.5 32 ± 1 66 MAX. 63.5 ± 1 28.5 PUMP-OUT PORT 9.5 70 ± 2 102 ± 2 95 ± 2 46 ± 1 10 ± 1 OUTPUT PIN 172 ± 2 PHOTOSENSITIVE SURFACE 8.5 ± 0.5 6.5 51.2 ± 1 DETECTOR NC DETECTOR KIRDA0129EA 7.9 ± 1 3 MCT photoconductive detector ➂ P3257-50 P2748/P5274 series, P3257-50 PUMP-OUT VALVE 10 MAX. 12.8 10.6 MAX. 29.0 MAX. 26.7 -0.01 22 +0 12.7 (2 ×) 56UNC-2B DEPTH: 5.5 4PL MOUNTING HOLE FOV PHOTOSENSITIVE SURFACE 50.8 ± 0.1 56.0 ± 0.3 MOUNT SIDE 58 38.9 MAX. OUTPUT PIN 28.3 MAX. 23.8 43 36.4 (4 ×) 2.5 39.4 34.8 MAX. 25.9 26.8 20.1 MAX. 70.0 27.4 MAX. 50.1 MAX. 14.5 MAX. 50.3 MAX. 81.1 MAX. 76.5 KIR KIRDA0130EA Board thickness including mounted components: 20 MAX. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KIRD1021E03 Oct. 2002 DN 4