P3207-05

INFRARED DETECTOR PbSe photoconductive detector P791/P2038/P2680 series, P3207-05 Detection capability up 5 µm range (TE-cooled type) Hamamatsu provides various types of PbSe photoconductive cells including room temperature operation types and thermoelectrically cooled types. Cooled type PbSe photoconductive cells offer higher sensitivity and improved S/N, and are widely used in precision photometry such as in analytical instruments. Features Applications Compared to other types of detectors used in the same wavelength range, PbSe cells have higher response speed and can also operate at room temperature, making them useful in a wide range of applications such as gas analyzers, etc. l Lower temperature detection limit: 50 ˚C approx. l High-speed response l Room temperature operation l Radiation thermometer l Flame detector l Gas analyzer l Film thickness gauge Accessories (Optional) l Heatsink for one-stage TE-cooled type A3179 l Heatsink for two-stage TE-cooled type A3179-01 l Temperature controller for TE-cooled type C1103-04 l Preamplifier for PbS/PbSe photoconductive detector C3757-02 l Infrared detector module with preamp Non-cooled type P4245 Cooled type P4639 s Specification / Absolute maximum ratings Type No. Di mensional Package outline Cooling Absolute maximum ratings Active Thermistor Thermistor TE-cooler Operating Storage Supply temperature temperature area resistance power current voltage Topr Tstg dissipation dissipation (mm) (mW) (A) (V) (°C) (°C) (kΩ) 2×2 3×3 2×2 2×2 100 -30 to +50 -55 to +60 1.5 3×3 9 0.2 2×2 1.0 3×3 P791-11 P791-13 P3207-05 P2038-02 P2038-03 P2680-02 P2680-03 ➀ ➁ ➂ TO-5 Non-cooled One-stage TE-cooled Two-stage TE-cooled TO-8 ➃ s Electrical and optical characteristics (Typ. unless otherwise noted) Measurement Peak condition sensitivity Cut-off Element wavelength wavelength temperature λc λp T (°C) (µm) (µm) Photo sensitivity S *2 λ=λp Vs=15 V D∗ (500, 600, 1) Rise time D∗ tr (λp, 600, 1) 0 to 63 % Max. (µs) 3 Dark resistance Rd (MΩ) 0.3 to 1.5 1.7 to 7.0 5 1.8 to 8.0 Type No. P791-11 4.0 P791-13 25 4.8 1 4.3 P3207-05 * P2038-02 -10 4.1 5.1 P2038-03 P2680-02 -20 4.2 5.2 P2680-03 *1: Half width 400 nm *2: Chopping frequency: 600 Hz, load resistance: nearly equal to detector element dark resistance Typ. Min. Typ. Min. (V/W) (V/W) (cm· Hz 1/2 /W) (cm· Hz 1/2 /W) (c m· Hz 1/2 / W) 7 × 102 1 × 103 5 × 107 1 × 108 1 × 109 3 × 102 5 × 102 7 × 102 1 × 103 8 × 108 3 3 2.2 × 10 3 × 10 1 × 108 3 × 108 3 × 109 1 × 103 1.3 × 103 2.7 × 103 4 × 103 2 × 108 4 × 108 4 × 109 1.2 × 103 2 × 103 1 PbSe photoconductive detector s Spectral response P791/P2038/P2680 series 100 (Typ.) P791/P2038/P2680 series, P3207-05 P3207-05 100 (Typ.) 80 -20 ˚C 80 RELATIVE VALUE (%) RELATIVE VALUE (%) 60 -10 ˚C 40 25 ˚C 20 60 40 20 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 WAVELENGTH (µm) WAVELENGTH (µm) KIRDB0280EA KIRDB0281EA s S/N vs. supply voltage 600 s S/N vs. chopping frequency (Typ. Ta=25 ˚C) 18 10 3 (Typ. Ta=25 ˚C) LIGHT SOURCE: BLACK BODY 500 K 2 INCIDENT ENERGY: 16.7 µW/cm SUPPLY VOLTAGE: 15 V S/N 500 SIGNAL (µV) 400 RELATIVE S/N NOISE (µV) LIGHT SOURCE: BLACK BODY 500 K INCIDENT ENERGY: 16.7 µW/cm2 CHOPPING FREQUENCY: 600 Hz FREQUENCY BANDWIDTH: 60 Hz Supply voltage is the value which contains load resistance S 15 12 S 10 2 300 N 9 200 6 N 100 3 0 0 10 20 30 40 50 60 70 80 0 90 100 101 2 10 10 3 10 4 SUPPLY VOLTAGE (V) KIRDB0052EC CHOPPING FREQUENCY (Hz) KIRDB0053EB Increasing the chopping frequency reduces the 1/f noise and results in an S/N improvement. The S/N can also be improved by narrowing the noise bandwidth using a lock-in amplifier. s Photo sensitivity temperature characteristic 10 3 s Dark resistance, rise time temperature characteristics 103 (Typ.) (Typ.) LIGHT SOURCE: BLACK BODY 500 K SUPPLY VOLTAGE: 15 V INCIDENT ENERGY: 16.7 µW/cm2 CHOPPING FREQUENCY: 600 Hz RELATIVE SENSITIVITY RELATIVE VALUE DARK RESISTANCE 102 10 2 RISE TIME 10 1 -20 -10 0 10 20 30 40 50 60 101 -20 -10 0 10 20 30 40 50 60 ELEMENT TEMPERATURE (˚C) KIRDB0054EB ELEMENT TEMPERATURE (˚C) KIRDB0055EB Cooling the device enhances its sensitivity, but the sensitivity also depends on the load resistance in the circuit. 2 PbSe photoconductive detector s Photo sensitivity linearity 10 2 P791/P2038/P2680 series, P3207-05 s Cooling characteristics of TE-cooler 40 (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) (Typ. Ta=25 ˚C, FULLY ILLUMINATED) 101 ELEMENT TEMPERATURE (˚C) RELATIVE SENSITIVITY 20 100 0 ONE-STAGE TE-COOLED 10-1 -20 10 -2 -40 TWO-STAGE TE-COOLED DEPENDENT ON NEP 10-3 10-7 10-6 10-5 10-4 10-3 10-2 -60 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 INCIDENT ENERGY (W/cm2) KIRDB0056EA CURRENT (A) KIRDB0185EA By making the incident light spot smaller than the active area, the upper limit of the linearity becomes lower. s Current vs. voltage characteristics of the TE-cooler (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) s Thermistor temperature characteristic 106 (Typ.) 1.6 1.4 1.2 RESISTANCE (Ω) ONE-STAGE TE-COOLED CURRENT (A) 10 5 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 TWO-STAGE TE-COOLED 104 103 -40 -30 -20 -10 0 10 20 30 VOLTAGE (V) KIRDB0115EB ELEMENT TEMPERATURE (˚C) KIRDB0116EA s Connection example (P2680-03) CABLE (SUPPLIED WITH C3757-02) 2-CONDUCTOR SHIELDED CABLE P2680-03 + A3179-01 DETECTOR AND HEATSINK BNC CONNECTOR CABLE (SOLD SEPARATELY) C3757-02 POWER SUPPLY FOR PREAMP AMP LOCK-IN AMP or SPECTRUM ANALYZER SIGNAL PROCESSING CIRCUIT C1103-04 TEMPERATURE CONTROLLER C4696 CHOPPER CABLE (SUPPLIED WITH C1103-04) Connect C1103-04 and power supply ground terminals together. KIRDC0045EB 3 PbSe photoconductive detector s Dimensional outlines (unit: mm) ➀ P791-11/-13 9.1 ± 0.3 8.1 ± 0.1 WINDOW 5.5 ± 0.1 P791/P2038/P2680 series, P3207-05 ➁ P3207-05 9.1 ± 0.3 8.1 ± 0.1 2.1 ± 0.2 3.0 ± 0.2 18 MIN. DETECTOR DETECTOR GND 2.1 ± 0.2 FILTER 0.4 MAX. 18 MIN. 0.45 LEAD 0.45 LEAD 5.1 ± 0.2 5.1 ± 0.2 1.5 MAX. DETECTOR DETECTOR GND 1.5 MAX. KIRDA0056EC 0.4 MAX. PHOTOSENSITIVE SURFACE PHOTOSENSITIVE SURFACE 4.2 ± 0.2 4.2 ± 0.2 WINDOW 5.5 ± 0.1 KIRDA0118EA ➂ P2038-02/-03 15.3 ± 0.2 14 ± 0.2 6.4 ± 0.2 ➃ P2680-02/-03 15.3 ± 0.2 14 ± 0.2 10 ± 0.2 6.7 ± 0.2 12 MIN. WINDOW 10 ± 0.2 WINDOW 10 ± 0.2 4.3 ± 0.2 12 MIN. PHOTOSENSITIVE SURFACE 0.45 LEAD 10.2 ± 0.2 5.1 ± 0.2 PHOTOSENSITIVE SURFACE 0.45 LEAD 10.2 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 KIRDA0128EA 5.1 ± 0.2 DETECTOR DETECTOR TE-COOLER (-) TE-COOLER (+) THERMISTOR DETECTOR DETECTOR TE-COOLER (-) TE-COOLER (+) THERMISTOR KIRDA0125EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KIRDA1020E06 4 Mar. 2007 DN