P5968-060

INFRARED DETECTOR InSb photovoltaic detector P5968/P4247 series High-speed response, low-noise photovoltaic detector P5968/P4247 series are photovoltaic detectors having high sensitivity in the so-called atmospheric window at 3 to 5 µm. Custom devices are also available to meet your special request. Features Repumpable metal dewars (liquid nitrogen cooling) allow 8-hour hold time. Starling cooling type without pour-filled liquid nitrogen is also provided. l Built-in preamp type available Built-in preamp allows high precision photometry. P7751-01 (Uses P5968-060.) P7751-02 (Uses P5968-200.) Applications l Cooling hold time: 8 hours l Thermometers (radiometers) l Thermal imaging l Remote sensing l Gas analysis l FTIR l Spectrophotometry Accessories (Optional) l Amplifier for InSb photovoltaic detector I S pecification / Absolute maximum ratings Type No. Dimensional outline/ Window material *1 Package Cooling Active area (mm) f0.6 f1 f2 f3 f1 0.25 × 1.4 *2 0.45 × 0.45 *3 Number of element 1 1 1 1 1 1 × 16 4×4 C4159-01 (active aera: smaller than φ1 mm) C4159-04 (active area: φ2 mm) [Custom amplifier is also available for use with P5968-300 (3 mm dia. type)] Absolute maximum ratings Reverse Operating Storage voltage temperature temperature VR Topr Tstg (V) (°C) (°C) P5968-060 P5968-100 Liquid ➀ /Si Metal dewar nitrogen P5968-200 P5968-300 Metal Stirling P5968-105 ➁ /Si P4247-16 Liquid Metal dewar ➂ /Si nitrogen P4247-44 *1: Window material Si: silicon (with AR coated) *2: Size per 1 element (16 element array) *3: Size per 1 element (4 × 4 element array) 0.5 -40 to +60 -55 to +60 I E lectrical and optical characteristics (Typ. unless otherwise noted) Measurement Peak Photo condition sensitivity Cut-off sensitivity Shunt resistance Element wavelength wavelength S temperature Rsh lc l =l p lp T (°C) ( mm ) (mm) (A/W ) 1 1 1 5 1 1 1 D* (500 K, 1200, 1) D* (l p, 1200, 1) NEP l =l p Type No. P5968-060 P5968-100 P5968-200 P5968-300 P5968-105 P4247-16 P4247-44 -196 5.3 5.5 2.5 Typ. Min. 1/2 1/2 1/2 (W ) (cm· Hz /W) (cm· Hz /W) (cm· Hz /W) (W/Hz1/2) 7 × 10 3.3 × 10-13 6 × 10 5.5 × 10-13 × 105 1.1 × 10-12 × 104 2 × 1010 3 × 1010 1.6 × 1011 1.6 × 10-12 × 106 5.5 × 10-13 × 107 6.5 × 10-13 7 × 10 5.0 × 10-13 Rise time Terminal capacitance tr VR=0 V Ct RL=50 W VR=0 V 0 to 63 % f=1 MHz (ns) 30 70 150 600 70 70 60 (pF) 30 100 200 900 100 100 60 1 InSb photovoltaic detector I Spectral response 10 12 P5968/P4247 series I S, N vs. chopping frequency (Typ. T= -196 ˚C) 103 LOAD RESISTANCE: 1 kΩ SUPPLY VOLTAGE: 0 V ELEMENT TEMPERATURE: -196 ˚C (Typ.) D* (l,1200,1) (cm · Hz1/2/W) S/N (OPTIONAL VALUE) 10 2 S 10 11 10 1 N 1010 1 2 3 4 5 6 100 2 10 103 104 105 106 WAVELENGTH (µm) KIRDB0063EC CHOPPING FREQUENCY (Hz) KIRDB0065ED I Measurement circuit CHOPPER 1200 Hz DETECTOR BAND-PASS FILTER r.m.s. METER BLACK BODY 500 K fo=1200 Hz ,f=120 Hz INCIDENT ENERGY: 2.64 µW/cm2 KIRDC0004EA 2 InSb photovoltaic detector I Dimensional outlines (unit: mm) ➀ P5968-060/-100/-200/-300 LN2 FILL PORT 12.5 P5968/P4247 series 51 ± 1 32 ± 1 63.5 ± 1 28.5 PUMP-OUT PIPE 9.5 43 ± 1 46 ± 1 72 ± 1 102 ± 1 95 ± 1 SIGNAL OUTPUT LEAD 6.5 PHOTOSENSITIVE SURFACE 37 ± 1 8.5 ± 0.5 66.8 ± 1 DETECTOR (ANODE) NC DETECTOR (CATHODE) KIRDA0131EC ➁ P5968-105 sional outline (P3257-50/-55, P5968-105, unit: mm) PUMP-OUT BULB 10 MAX. 12.8 28.3 MAX. 10.6 MAX. 29.0 MAX. 26.7 -0.01 22 +0 12.7 (4 ×) 56UNC-2B DEPTH: 5.5 4PL MOUNTING HOLE PHOTOSENSITIVE SURFACE SIGNAL OUTPUT LEAD MOUNTING SURFACE 50.8 ± 0.1 56.0 ± 0.3 FOV 38.9 MAX. 23.8 10 ± 1 172 ± 2 43 58 36.4 (4 ×) 2.5 20.1 MAX. 39.4 34.8 MAX. 25.9 26.8 70.0 27.4 MAX. 50.1 MAX. 14.5 MAX. 50.3 MAX. 81.1 MAX. 76.5 KIRD KIRDA0130EA 3 InSb photovoltaic detector ➂ P4247 series LN2 FILL PORT 12.7 50.8 18 PIN CONNECTOR P5968/P4247 series 69.9 53.7 100.8 76.1 PLUG 5.74 PUMP-OUT BULB 28.6 9.5 88.9 15.6 38.1 79.5 6.5 50.8 12 ± 1 53.7 KIRDA0132EA PHOTOSENSITIVE SURFACE I Details of multi-element detectors (unit: µm) For custom devices with different number of elements, size and package, please consult our sales office. P4247-16 4750 300 250 450 11 63.5 152.4 P4247-44 510 ACTIVE AREA 1400 1,980 ACTIVE AREA KIRDA0006EA 510 450 KIRDA0146EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4 Cat. No. KIRD1039E03 Nov. 2002 DN