P6606-310

INFRARED DETECTOR InSb photoconductive detector P6606 series Thermoelectrically cooled detectors capable of long-term measurements Features Applications l Thermoelectric cooling ensures high speed and high l Environment measurements (gas analysis, etc.) sensitivity up to 6.5 µm. l Radiation thermometers (5 µm band) l Photoconductive element that changes electrical l FTIR resistance by input of IR radiation l IR laser detection l Easy-to-use detector/preamp modules are also available. Accessories (optional) l Heatsink for one-stage TE-cooled type A3179 l Heatsink for two-stage TE-cooled type A3179-01 l Heatsink for three-stage TE-cooled type A3179-04 l Temperature controller C1103-05 (-75 to -25 ˚C) C1103-07 (-30 to +20 ˚C) l Preamp C5185 l Infrared detector module with preamp C4631-03 (P6606-310) I Specifications / Absolute maximum ratings Type No. Dimensional outline/ Package Window 1 material * P6606-110 TO-8 ➀/S P6606-210 P6606-305 P6606-310 TO-3 ➁/S P6606-320 *1: Window material S: Sapphire glass Absolute maximum ratings Thermistor TE-cooler Operating Storage Allowable Cooling power power temperature temperature current dissipation dissipation Topr Tstg (mm) (mW) (A) (mA) (°C) (°C) 1.5 One-stage TE-cooled 1×1 40 1.0 Two-stage TE-cooled 0.5 × 0.5 20 0.2 -40 to +60 -55 to +60 1.0 40 Three-stage TE-cooled 1 × 1 2×2 60 Active area I Electrical and optical characteristics (Typ. unless otherwise noted) Photo Measurement Peak Cut-off sensitivity condition sensitivity wavelength S Element wavelength temperature lc l=lp lp T Vs=15 V (°C) -10 -30 -60 (mm) 5.5 (mm) 6.7 6.5 6.3 (V/W) 10 50 2500 650 150 D* (500, 1200, 1) D* (lp, 1200, 1) Rise time tr 0 to 63 % (ms) 0.4 Dark resistance Rd (W) 20 25 150 80 80 Type No. P6606-110 P6606-210 P6606-305 P6606-310 P6606-320 Min. Typ. (cm·Hz1/2/W) (cm·Hz1/2/W) (cm·Hz1/2/W) 7 × 107 2 × 108 1 × 109 1.5 × 108 5 × 108 2.5 × 109 1 × 109 2 × 109 1 × 1010 1 × 109 2 × 109 1 × 1010 5 × 108 1 × 109 5 × 109 1 InSb photoconductive detector I Spectral response 10 11 P6606 series I D* vs. element temperature (Typ. T= -60 ˚C) 10 11 (Typ.) D* (λ, 1200, 1) (cm · Hz2 /W) D* (λ, 1200, 1) (cm · Hz2 /W) 1 1 10 10 10 10 10 9 10 9 108 2 3 4 5 6 7 108 -60 -50 -40 -30 -20 -10 0 WAVELENGTH (µm) KIRDB0166EB ELEMENT TEMPERATURE (˚C) KIRDB0167EA I Thermistor temperature characteristic 1 MΩ (Typ.) I Cooling characteristics of TE-cooler [Typ. Ta=25 ˚C, thermal resistance of heatsink=3 ˚C/W (one and two-stage TE-cooler), 1.2 ˚C/W (three-stage TE-cooler)] 40 ELEMENT TEMPERATURE (˚C) 20 ONE-STAGE TE-COOLED TYPE TWO-STAGE TE-COOLED TYPE RESISTANCE 100 kΩ 0 -20 10 kΩ -40 THREE-STAGE TE-COOLED TYPE -60 1 kΩ -80 -60 -40 -20 0 20 40 -80 0 0.4 0.8 1.2 1.6 ELEMENT TEMPERATURE (˚C) KIRDB0168EA TE-COOLER CURRENT (A) KIRDB0177EA 2 InSb photoconductive detector I Current vs. voltage characteristics of TE-cooler 1.6 1.4 1.2 ONE-STAGE TE-COOLED TYPE [Typ. Ta=25 ˚C, thermal resistance of heatsink=3 ˚C/W (one and two-stage TE-cooler), 1.2 ˚C/W (three-stage TE-cooler)] P6606 series CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0.0 THREE-STAGE TE-COOLED TYPE TWO-STAGE TE-COOLED TYPE 0 0.5 1.0 1.5 2.0 2.5 VOLTAGE (V) KIRDB0176EB I Measurement circuit CHOPPER 1200 Hz BAND-PASS FILTER r.m.s. METER DETECTOR BLACK BODY 500 K fo=1200 Hz ∆f=120 Hz INCIDENT ENERGY: 2.64 µW/cm2 KIRDC0005EA 3 InSb photoconductive detector I Dimensional outlines (unit: mm) ➀ P6606-110/-210 15.3 ± 0.2 14 ± 0.2 PHOTOSENSITIVE SURFACE WINDOW 10 ± 0.2 P6606 series 0.45 LEAD 10.2 ± 0.2 5.1 ± 0.2 12 MIN. 10.0 ± 0.2 a DETECTOR DETECTOR TE-COOLER (-) TE-COOLER (+) THERMISTOR P6606-110 P6606-210 a 4.2 ± 0.2 6.6 ± 0.2 KIRDA0126EA 5.1 ± 0.2 10.2 ± 0.2 ➁ P6606-305/-310/-320 39 30.1 ± 0.1 4 19.4 ± 0.2 5.0 ± 0.2 12 ± 1 2.0 25.4 ± 0.2 PHOTOSENSITIVE WINDOW 10 ± 0.2 SURFACE PUMP-OUT PIPE 5 MAX. 12.7 ± 0.2 40˚ 25 MAX. 1.0 LEAD 11.6 ± 0.2 TE-COOLER (+) DETECTOR THERMISTOR PUMP-OUT PIPE NC TE-COOLER (-) 40˚ 40˚ 40˚ 40˚ KIRDA0127EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KIRD1026E04 Sep. 2002 DN 4