R2693P

PHOTOMULTIPLIER TUBES R2693, R2693P Transmission Mode Low Noise Bialkali Photocathode 28 mm (1-1/8 inch) Diameter, Side-on Type FEATURES GLow Dark Current GLow Dark Counts (R2693P) GWide Photocathode GExcellent Spatial Uniformity GFast Time Response APPLICATIONS GFluorescence Detector GChemiluminescence Detector GLight Scattering Detector SPECIFICATIONS GENERAL Parameter Description/Value 185 to 650 Spectral Response 375 Wavelength of Maximum Response MateriaI Low noise bialkali Photocathode Minimum Effective Area 16 (H) × 18 (W) UV glass Window Material Structure Circular-cage Dynode Number of Stages 9 1.2 Direct Interelectrode Anode to Last Dynode Anode to All Other Electrodes 3.4 Capacitances Base 11-pin base JEDEC No. B11-88 Operating Ambient Temperature -30 to +50 Storage Temperature -30 to +50 SuitabIe Socket E678–11A (Sold Separately) E717–63 (Sold Separately) SuitabIe Socket Assembly E717–74 (Sold Separately) Unit nm nm — mm — — — pF pF — °C °C — — — Figure 1: Electron Trajectories 3rd DYNODE 1st DYNODE FOCUSING ELECTRODES 2nd DYNODE GLASS BULB PHOTOCATHODE PHOTOELECTRONS LIGHT TPMSC0003EC Figure 2: Typical Spatial Uniformity GX-Axis 100 90 80 GY-Axis 100 90 80 RELATIVE OUTPUT (%) 70 60 50 40 30 20 RELATIVE OUTPUT (%) -10 CATHODE ANODE 5 0 5 10 15 70 60 50 40 30 20 10 0 -15 -10 CATHODE ANODE 5 0 5 10 15 Y X SPOTSIZE: 1 mm SUPPLY VOLTAGE: 1000 V WAVELENGTH: 400 nm 10 0 -15 POSITION (mm) POSITION (mm) TPMSB0066EB Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. PHOTOMULTIPLIER TUBES R2693, R2693P MAXIMUM RATINGS (Absolute Maximum Values) Parameter Between Anode and Cathode Supply Voltage Between Anode and Last Dynode Average Anode Current A Value 1250 250 0.1 Unit V V mA CHARACTERISTlCS (at 25 °C) Parameter Quantum Efficiency at 375 nm Luminous B Radiant at 375 nm (Peak) Blue Sensitivity Index C Luminous D Radiant at 375 nm (Peak) R2693 for General Purpose Min. Typ. Max. — — 20.5 — 30 50 — — 62 — — 7.0 — 100 300 — — 3.7 × 105 — — 6 × 106 5.0 — 0.5 — — — — — — — — 8.6 × 10-17 — — 1.2 — — 18 — — 1.0 — — 0.5 — — 1.0 R2693P for Photon Counting Min. Typ. Max. — 20.5 — 30 50 — — 62 — — 7.0 — 100 300 — — 3.7 × 105 — — — 6 × 106 — 2.0 0.1 — 50 20 — 50 10 — — 3.9 × 10-17 — — 1.2 — — 18 — — 1.0 — — 0.5 — — 1.0 Unit % µA/lm mA/W µA/lm-b A/lm A/W — nA s-1 s-1 W ns ns ns % % Cathode Sensitivity Anode Sensitivity Gain D Anode Dark Current E (After 30 min Storage in Darkness) Pulse Hight Distribution F Anode Dark Counts at Plateau Voltage G ENI (Equivalent Noise Input) H Anode Pulse Rise Time J D Time Response Electron Transit Time K Transit Time Spread (FWHM) L M Current Hysteresis Anode Current Stability Voltage Hysteresis NOTES A: Averaged over any interval of 30 seconds maximum. B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856 K. Supply voltage is 100 V between the cathode and all other electrodes connected together as anode. C: The value is cathode output current when a blue filter (Corning CS 5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as Note B. D: Measured with the same light source as Note B and with the voltage distribution ratio shown in Table 1 below. Table 1: Voltage Distribution Ratio Electrodes K Dy1 Dy2 Dy3 Ratio 1 1 1 1 Pulse Height Distribution Electrodes K Dy1 Dy2 Dy3 Ratio 1 1 1 1 Plateau Electrodes Ratio •••• ••••• Dy7 Dy8 Dy9 P 1 1 1 J: The rise time is the time for the output pulse to rise from 10 % to 90 % of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. K: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitube. In measurement, the whole photocathode is illuminated. L: Also called transit time jitter. This is the fluctuation in electron transit time between individual pulses in the single photoelectron mode, and may be defined as the FWHM of the frequency distribution of electron transit times. M: Hysteresis is temporary instability in anode current after light and voltage are applied. Hysteresis = lmax. li ANODE CURRENT SuppIy Voltage: 1000 V, K: Cathode, Dy: Dynode, P: Anode •••• •••• lmin. × 100 (%) Dy7 Dy8 Dy9 P • 1 1 1 li SuppIy Voltage: Note F, K: Cathode, Dy: Dynode, P: Anode l max. l min. TIME K Dy1 Dy2 Dy3 1 1 1 1 •••• ••••• Dy7 Dy8 Dy9 P 1 2 1 0 5 6 7 (minutes) TPMSB0002EA SuppIy Voltage: Plateau Voltage, K: Cathode, Dy: Dynode, P: Anode E: Measured with the same supply voltage and voltage distribution ratio as Note D after removal of light. F: Measured at the voltage producing the gain of 1 × 106 G: Plateau voltage at the test up in HPK H: ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. ENI = where 2q.ldb.G.∆f (1)Current Hysteresis The tube is operated at 750 V with an anode current of 1 µA for 5 minutes. The light is then removed from the tube for a minute. The tube is then re-illuminated by the previous light level for a minute to measure the variation. (2)Voltage Hysteresis The tube is operated at 300 V with an anode current of 0.1 µA for 5 minutes. The light is then removed from the tube and the supply voltage is quickly increased to 800 V. After a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation. S q = Electronic charge (1.60 × 10-19 coulomb). ldb = Anode dark current (after 30 minutes storage) in amperes. G = Gain. ∆f = Bandwidth of the system in hertz. 1 hertz is used. S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response. Figure 3: Typical Spectral Response 100 TPMSB0060EA Figure 4: Typical Time Response 200 TPMSB0061EA CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) CATHODE RADIANT SENSITIVITY 100 80 60 40 10 QUANTUM EFFICIENCY TRAN TIME (ns) 20 SIT TIM E 1 10 8 6 0.1 4 2 RISE TIME 1000 1500 0.01 1 200 400 600 800 300 500 700 WAVELENGTH (nm) SUPPLY VOLTAGE (V) Figure 5: Typical Gain and Anode Dark Current (R2693) 108 TPMSB0062EA Figure 6: Typical Single Photoelectron Pulse Height Distribution (R2693P) 1.0 TPMSB0063EA 10-5 107 10-6 FULL SCALE (SIGNAL+DARK): 1 × 104 FULL SCALE (DARK) : 1 × 1 03 0.8 SIGNAL+DARK 106 10-7 ANODE DARK CURRENT (A) COUNTS PER CHANNEL 0.6 105 G AI N 10-8 GAIN 0.4 WAVELENGTH OF INCIDENT LIGHT : 400 nm : 1000 V SUPPLY VOLTAGE SIGNAL+DARK COUNTS : 5364 s-1 : 15 s-1 DARK COUNTS AMBIENT TEMPERATURE : +25 C U R R 104 EN T 10-9 AN O D E 103 AR 0.2 K 10-10 D DARK 102 10-11 0 0 200 400 600 800 1000 101 300 400 500 600 800 1000 10-12 1300 CHANNEL NUMBER (ch) DISCRIMINATION LEVEL SUPPLY VOLTAGE (V) Figure 7: Typical Temperature Coefficient of Anode Sensitivity +1.2 TPMSB0064EA Figure 8: Typical Temperature Characteristics of Dark Current (R2693) (at 1000 V, after 30 min storage) 100 TPMSB0065EB TEMPERATURE COEFFICIENT (%/°C) +0.8 ANODE DARK CURRENT (nA) 10 +0.4 0 1 -0.4 0.1 -0.8 -1.2 200 0.01 300 400 500 600 700 0 20 40 60 80 100 WAVELENGTH (nm) TEMPERATURE (°C) PHOTOMULTIPLIER TUBES R2693, R2693P Figure 9: Dimensional Outline and Basing Diagram (Unit: mm) 29.0 ± 1.7 18 MIN. PHOTOCATHODE DY6 6 Figure 10: Socket (Unit: mm) Sold Separately E678-11A 49 38 DY5 16 MIN. DY4 4 76 MAX. DY3 3 90 MAX. DY2 2 5 7 DY7 8 DY8 3.5 5 29 18 4 9 DY9 10 1 11 K P 49.0 ± 2.5 DY1 DIRECTION OF LIGHT 32.2 ± 0.5 11 PIN BASE JEDEC No. B11-88 HA COATING TPMSA0007ED 33 TACCA0064EA Figure 11: D Type Socket Assembly (Unit: mm) E717-63 Sold Separately E717-74 HOUSING (INSULATOR) 5 33.0 ± 0.3 3.5 PMT P SOCKET PIN No. 10 R10 DY9 9 R9 DY8 DY7 8 R8 7 R7 C3 C2 C1 SIGNAL GND SIGNAL OUTPUT RG-174/U(BLACK) POWER SUPPLY GND AWG22 (BLACK) PMT SOCKET PIN No. 10 SIGNAL OUTPUT (A) GND (G) R10 C3 C2 C1 32.0±0.5 26.0±0.2 P DY9 26.0±0.2 32.0±0.5 TOP VIEW DY8 DY7 DY6 14.0±0.5 DY5 DY4 DY3 DY2 0.7 DY1 K 9 R9 8 R8 7 R7 6 R6 5 R5 4 R4 3 R3 2 R2 1 R1 11 -HV (K) R1 to R10 : 330 kΩ C1 to C3 : 10 nF 38.0 ± 0.3 49.0 ± 0.3 29.0 ± 0.3 4 DY6 DY5 6 R6 5 R5 4 R4 3 R3 2 R2 1 R1 11 R1 to R10 : 330 kΩ C1 to C3 : 10 nF 0.7 7 2 A G 30.0 +0 -1 31.0 ± 0.5 HOUSING (INSULATOR) DY4 DY3 DY2 2.7 22.4±0.2 SIDE VIEW K 450 ± 10 POTTING COMPOUND DY1 K ° 10 -HV AWG22 (VIOLET) 30° R13 4- 2.8 * "Wiring diagram applies when -HV is supplied." To supply +HV,connect the pin "G" to +HV, and the pin "K" to the GND. BOTTOM VIEW TACCA0002EH TACCA0277EA * Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply. Warning–Personal Safety Hazards Electrical Shock–Operating voltages applied to this device present a shock hazard. WEB SITE www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se TPMS1014E02 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it JAN. 2007. 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