R5509-72

LOW-LIGHT-LEVEL NIR (NEAR INFRARED:1.4µm/1.7µm) MEASUREMENT PHOTOMULTIPLIER TUBES R5509-42/R5509-72 IN THE NIR with EXCLUSIVE COOLERS APPLICATION EXAMPLE: Photoluminescence measurement Sample 1 SAMPLE TEMPERATURE InAlAs/InGaAs single quantum wells Photoluminescence spectra emitted from a sample with different InGaAs well widths. This data proves that intensity distribution of the spectrum corresponding to each quantum well varies with the excitation light power. 77K Sample structure: InAlAs/InGaAs (SQWs)/InP(sub) InGaAs InAlAs InGaAs InAlAs InGaAs InAlAs InGaAs InAlAs Fe doped 50 Å 300 Å 30 Å 300 Å 60 Å 300 Å 100 Å 3000 Å InP (100) sub. INTENSITY (RELATIVE) 30 Å 60 Å EXCITATION LIGHT: SHG Nd: YAG (532 nm) SLIT: 0.2 × 0.2 mm 100 Å SAMPLE TEMPERATURE: 77K EXCITATION LIGHT POWER: 8µW EXCITATION LIGHT POWER: 50µW EXCITATION LIGHT POWER: 0.6mW EXCITATION LIGHT POWER: 3mW 1100 1200 1300 1400 1500 1600 1700 WAVELENGTH (nm) TPMHB0627EB OVER VIEW Hamamatsu near infrared photomultiplier tubes (NIR-PMT) R5509-42 and -72 have newly developed photocathodes with extended spectral response ranges to 1.4 µm or 1.7 µm where beyond 1.1 µm have been the limit of conventional photocathodes. NIR-PMTs the R5509-42 and -72 not only have these new spectral response ranges, but also have good features of conventional photomultiplier tubes for fast time response and photon counting performance, which allow weak light detection in the near infrared region. They can solve the problems of low sensitivity and slow time response in other conventional near infrared detectors like a germanium diode which is so far commonly used in this range. FEATURES GUsing a "low power excitation light" allows high-precision measurement not affected by strong excitation light. High gain and low noise improve the detection limit. GFlat response from visible to near IR minimize spectral sensitivity correction. The spectral response covers a wide range from 300 nm to 1.4 µm or 1.7 µm. GPhotoluminescence from a room temperature sample can be measured. High sensitivity enables weak light emission measurement. GTime resolved measurement in near IR is realized. Fast time response (Rise time: 3 ns). TPMHF0435 APPLICATION EXAMPLES Photoluminescence measurement Sample 2 SAMPLE TEMPERATURE Undoped SI-InP Emission from deep levels in a semiinsulating InP substrate at room temperature was clearly observed. INTENSITY (RELATIVE) 300K ( ) room temperature EXCITATION LIGHT: SHG Nd: YAG (532 nm) SLIT: 0.5 × 0.5 mm SAMPLE TEMPERATURE: 300K X10 EXCITATION LIGHT POWER: 0.6 mW X1 X1 700 800 900 EXCITATION LIGHT POWER: 3 mW X10 1000 1100 1200 1300 1400 1500 1600 1700 WAVELENGTH (nm) TPMHB0621EA Data shows that intensity distribution of the photoluminescence spectrum changes with excitation light power. Using a "low power excitation light" allows high-precision measurement not subject to variations in excitation light intensity. It is therefore essential to use "low power excitation light" in order to measure emission from deep levels and total band-to-band transition. Data was measured with a near infrared measurement system described later. SAMPLE TEMPERATURE 77K INTENSITY (RELATIVE) EXCITATION LIGHT : SHG Nd: YAG (532 nm) SLIT: 0.5 × 0.5 mm SAMPLE TEMPERATURE: 77K EXCITATION LIGHT POWER: 0.05 mW EXCITATION LIGHT POWER: 0.6 mW EXCITATION LIGHT POWER: 3 mW 800 900 1000 1100 1200 1300 1400 1500 1600 WAVELENGTH (nm) TPMHB0622EA Sample 3 SAMPLE TEMPERATURE Undoped SI-GaAs Emission from deep levels in a semiinsulating GaAs substrate at room temperatures was clearly observed. INTENSITY (RELATIVE) 300K ( ) room temperature EXCITATION LIGHT: SHG Nd: YAG (532 nm) SLIT: 0.5 × 0.5 mm SAMPLE TEMPERATURE: 300K EXCITATION LIGHT POWER: 0.6 mW EXCITATION LIGHT POWER: 3 mW 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 WAVELENGTH (nm) TPMHB0619EA SAMPLE TEMPERATURE 77K INTENSITY (RELATIVE) EXCITATION LIGHT: SHG Nd: YAG (532 nm) SLIT: 0.5 × 0.5 mm SAMPLE TEMPERATURE: 77K EXCITATION LIGHT POWER: 2 nW 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 Data was measured with a near infrared measurement system described later. WAVELENGTH (nm) TPMHB0620EA Sample 4 SAMPLE TEMPERATURE B-Doped Si (111) low resistivity wafer ρ > 0.02 kΩcm Silicon, the indirect bandgap semiconductor, has lower photoluminescence emission compared with direct bandgap semiconductors such as GaAs, InP, etc. However, the NIR-PMT has made it possible to observe a clear photoluminescence spectra from a room temperature silicon wafer even at low power excitation lights. INTENSITY (RELATIVE) 300K ( ) room temperature EXCITATION LIGHT: SHG Nd: YAG (532 nm) SLIT: 0.5 × 0.5 mm SAMPLE TEMPERATURE: 300K EXCITATION LIGHT POWER: 0.05 mW EXCITATION LIGHT POWER: 0.6 mW EXCITATION LIGHT POWER: 3 mW 900 1000 1100 1200 1300 1400 TPMHB0623EA WAVELENGTH (nm) SAMPLE TEMPERATURE 77K INTENSITY (RELATIVE) EXCITATION LIGHT: SHG Nd: YAG (532 nm) SLIT: 0.05 × 0.05 mm SAMPLE TEMPERATURE: 77K EXCITATION LIGHT POWER: 3 mW 900 1000 1100 1200 1300 1400 WAVELENGTH (nm) TPMHB0624EA high resistivity wafer ρ > 5 kΩcm Clear photoluminescence spectra can be observed at room temperature, even in faint emission from a high resistivity silicon wafer. Data was measured with a near infrared measurement system described later. SAMPLE TEMPERATURE SAMPLE TEMPERATURE 300K INTENSITY (RELATIVE) (room temperature) EXCITATION LIGHT: SHG Nd: YAG (532 nm) SLIT: 0.5 × 0.5 mm SAMPLE TEMPERATURE: 300K 77K EXCITATION LIGHT: SHG Nd: YAG (532 nm) SLIT: 0.05 × 0.05 mm SAMPLE TEMPERATURE: 77K INTENSITY (RELATIVE) EXCITATION LIGHT POWER: 3 mW EXCITATION LIGHT POWER: 3 mW 900 1000 1100 1200 1300 1400 900 1000 1100 1200 1300 1400 WAVELENGTH (nm) TPMHB0625EA WAVELENGTH (nm) TPMHB0626EA Sample 5 SAMPLE TEMPERATURE InAs/InGaAs quantum dots structure Figure shows PL spectrum at the room temperature from InAs quantum dots covered with InGaAs layer. Size and uniformity of quantum dots can be estimated from the peak wavelength and the FWHM of PL spectrum. However, when excitation power is increased, luminescence of shorter wavelength (1200 nm) becomes strong, and the estimate of exact peak wavelength and the FWHM becomes impossible. Therefore, it is important that excitation power must be kept as weak as possible for precise measurement. For this reason, a high sensitivity detector is required. Data was measured with a near infrared measurement system described later. INTENSITY (RELATIVE) 300K room (temperature) EXCITATION LIGHT: SHG Nd: YAG (532 nm) SLIT: 0.2 mm / 0.2 mm SAMPLE TEMPERATURE: 300 K EXCITATION LIGHT 30 mW 3 mW 0.3 mW 0.03 mW 0.003 mW 1050 1100 1150 1200 1250 1300 1350 1400 1450 TPMHB0664EA WAVELENGTH (nm) Basic Structure InGaAs 15 nm InAs dots InGaAs 5 nm GaAs buffer 300 nm GaAs (100) substrate APPLICATION EXAMPLES Photoluminescence measurement Sample 6 SAMPLE TEMPERATURE InGaAsP/InP p - InP 0.02 µm 2 × 1016 cm-3 p - InGaAsP 2 µm p + InP 2 µm INTENSITY (RELATIVE) 300K ( ) room temperature EXCITATION LIGHT: SHG Nd: YAG (532 nm) SLIT: 0.5 × 0.5 mm SAMPLE TEMPERATURE: 300K EXCITATION LIGHT POWER: 0.6 mW p + InP SUB 350 µm EXCITATION LIGHT POWER: 3 mW TPMHC0187EB 1100 1200 1300 1400 1500 1600 1700 TPMHB0617EA An epitaxial wafer at the room temperature can be evaluated. Photoluminescence measurement in 77K sample is possible at low power excitation lights from a few to tens of micro-watts. WAVELENGTH (nm) SAMPLE TEMPERATURE 77K INTENSITY (RELATIVE) EXCITATION LIGHT: SHG Nd: YAG (532 nm) SLIT: 0.2 × 0.2 mm SAMPLE TEMPERATURE: 77K EXCITATION LIGHT POWER: 8 µW EXCITATION LIGHT POWER: 50 µW EXCITATION LIGHT POWER: 0.6 mW EXCITATION LIGHT POWER: 3 mW 1100 1200 1300 1400 1500 1600 1700 TPMHB0618EA Data was measured with a near infrared measurement system described later. WAVELENGTH (nm) GComparison with Ge PIN photodiode Sample 7 SAMPLE TEMPERATURE B-Doped Si (111) low resistivity wafer 0.005-0.2 Ωcm The R5509-42 PMT provides high detection efficiency that allows detecting a distinct photoluminescent peak with a high S/N ratio from a room temperature sample. The data were taken with a relatively weak excitation in order to compare with a germanium detector (Ge PIN PD) which did not show a clear peak. INTENSITY (RELATIVE) 300K ( ) room temperature EXCITATION LIGHT: Ar LASER (514.5 nm) SAMPLE TEMPERATURE: 300 K R5509-42 Ge PIN-PD (77 K) 1000 1200 1400 TPMHB0451EC WAVELENGTH (nm) Sample 8 SAMPLE TEMPERATURE InGaAsP/InP InGaAs/InP photoluminescence measurements were performed under weak excitation conditions in order to compare the detection limit between the R5509-72 and a Ge PIN photodiode. The result proves that the R5509-72 allows to detect a peak output in the vicinity of 1.3 µm which is undetectable with the Ge PIN photodiode. In addition to the improvement in the detection limit at low light levels in the NIR region, the R5509-72 provides excellent time response, therefore, time-resolved photometry in the NIR region is now possible. 77K INTENSITY (RELATIVE) EXCITATION LIGHT: Ar LASER (514.5 nm) 200 µW SAMPLE TEMPERATURE: 77 K R5509-72 Ge PIN PD (77 K) 1200 1250 1300 1350 1400 WAVELENGTH (nm) TPMHB0453EC Measurement of Raman spectroscopy Sample 9 SAMPLE TEMPERATURE Rhodamine B in Ethanol Solution (2 × 10-2 mol/L) Raman spectroscopy is effective in studying the structure of molecules in a solution. In particular, near infrared Raman spectroscopy enables measurement of samples which were previously impossible with conventional methods using visible light excitation because of the influence of fluorescence. In this application, clear Raman spectra of solute rhodamine B (marked by M) are measured, as well as a Raman spectrum of ethanol solution. This data was obtained with weak excitation light averaging 10 mW output using pulsed excitation light and gate detection method under fluorescent room lighting conditions. 300K room (temperature) INTENSITY EXCITATION LIGHT: LD-PUMPED ND: YAG (1064 nm) 10 mW, 10 ns pulse, 10 kHz SAMPLE TEMPERATURE: 77 K RHODAMINE B POWDER SAMPLE ETHANOL 1600 1400 1200 1000 800 TPMHB0452EB RAMAN SHIFT (cm-1) Cathodoluminescence (CL) measurement Sample 10 SAMPLE TEMPERATURE InAs/InP The data on the right show images of cathodoluminescence (CL) emitted from InAs islands in an InAs/InP multiple quantum well structure, observed with a scanning electron microscope (SEM) to which a light collection system and a monochromator were installed. The righthand CL images were taken with the SEM using a Ge PIN photodiode. These images are not clear due to external noise such as cosmic rays. In contrast, the left-hand data taken with an R550942 photomultiplier tube shows clear, sharp CL images with a high S/N ratio. The R5509-42 allows high-sensitivity CL measurements in the near infrared region, which are expected to prove useful in optical evaluations of samples, analysis of inorganic or organic substances, and other near infrared spectroscopy. Cathodoluminescence (CL) Measurement When a sample is irradiated by high-velocity electron beams, electron-hole pairs in the sample are excited and then recombine while producing a characteristic luminescence known as cathodoluminescence (CL). Information on the internal electron structures of the sample can be studied by measuring this luminescence. 10K 990nm R5509-42 990nm Ge PIN-PD 77K 1010nm 1020nm 1030nm 1040nm Condition Electron Probe Accelerating Voltage Current 5 kV 10 nA Photos: By courtesy of Prof. Y. Takeda, Dept. of Materials Science and Engineering, Graduate School of Engineering, Nagoya University; Prof. A. Nakamura, Center for Integrated Research in Science and Engineering, Nagoya University APPLICATION EXAMPLES Measurement of singlet oxygen Sample 11 SAMPLE TEMPERATURE Singlet oxygen Rose Bengal in pure water Using the R5509-42 and a pulsed laser, singlet oxygen emission with a peak at 1270 nm were efficiently detected by signal processing with a gated pulse counter, reducing effects of fluorescence. (Data obtained by CW YAG laser excitation is also shown in the same graph for comparison.) The graph on the right shows detection limits evaluated by changing the concentration of the photosensitizer Rose Bengal. This proves that emissions from singlet oxygen of low concentration, even only 1 nmol/L, can be INTENSITY (RELATIVE) 300K room (temperature) 2 1.8 1.6 1.4 1.2 CW 1 0.8 0.6 0.4 0.2 0 1150 GATED PHOTON COUNTING METHOD GATED PHOTON COUNTING METHOD EXCITATION LIGHT: PULSE SHG Nd: YAG (532 nm) 12 mJ, PULSE WIDTH: 10 ns, 20 Hz SLIT: 2 mm/ 2 mm GATED DELAY TIME: 1.5 µs GATE TIME: 5 µs 1200 1250 1300 1350 WAVELENGTH (nm) TPMHB0665EA SAMPLE TEMPERATURE SIGNAL OUTPUT (COUNTS) 300K room (temperature) 105 EXCITATION LIGHT: PULSE SHG Nd: YAG (532 nm) 12 mJ, PULSE WIDTH: 10 ns, 20 Hz SLIT: 2 mm / 2 mm CONCENTRATION OF ROSE BENGAL 10 µmol/L 1 µmol/L 104 103 1 nmol/L 102 101 1100 1150 1200 1250 1300 1350 1400 1450 TPMHB0666EA Data was measured with a near infrared measurement system described later. WAVELENGTH (nm) Sample 12 SAMPLE TEMPERATURE INTEGRATED COUNTS (500 SHOT) Singlet oxygen Rose Bengal in acetone, methanol and water Lifetime characteristics and emission spectrum of the singlet oxygen when the photosensitizer Rose Bengal was dissolved in acetone, methanol and water were measured. Singlet oxygen lifetime can be measured with high accuracy, by using gated photon counting techniques that utilize high-speed response of a near infrared PMT and allow continuous scan of signal pulses obtained in a short gate time (sampling time). In solvents which singlet oxygen has a long life, there is little singlet oxygen that thermally disappears so more singlet oxygen disappears during the emission process. This results in an increase in the entire emission level. Data was measured with a near infrared measurement system described later. 300K room (temperature) 104 EXCITATION LIGHT: PULSE SHG Nd: YAG (532 nm) 2.5 mJ, PULSE WIDTH: 10 ns, 20 Hz SLIT: 2 mm / 2 mm GATE (sampling) TIME: 1 µs 103 τ=62 µs in CH3COCH3 (ACETONE) 102 τ=11 µs in CH3OH (METHANOL) 101 τ=3.7 µs in H2O (WATER) 100 0 10 20 30 40 50 60 70 80 90 100 TIME (µs) TPMHB0667EA SAMPLE TEMPERATURE INTEGRATED COUNTS (100 SHOT) 300K room (temperature) 1.4 × 104 1.2 × 104 1.0 × 104 0.8 × 104 0.6 × 104 0.4 × 104 0.2 × 104 0 1200 EXCITATION LIGHT: PULSE SHG Nd: YAG (532 nm) 2.5 mJ, PULSE WIDTH: 10 ns, 20 Hz SLIT: 2 mm / 2 mm GATED DELAY TIME: 3 µs GATE TIME: 50 µs CH3COCH3 CH3OH H2O 1220 1240 1260 1280 1300 1320 1340 WAVELENGTH (nm) TPMHB0668EA The samples 2 to 6 , 11 and 12 were measured with the measurement system shown below: Measurement System Most of the application data in this sheet were measured with the following system using an R5509 series PMT. Time resolved measurement and gated measurement were performed with a pulsed YAG laser and a photon counter in place of CW laser and lock-in amplifier. ISTRUCTURE Excitation light: LD-pumped Nd: (SHG) YAG laser, λ=532 nm, maximum output=50 mW or Pulsed Nd: (SHG) YAG laser, λ=532 nm, pulse energy more than 12 mJ, repetition rate=20 Hz, pulse with=5 ns to 7 ns Monochromator: Czerny-Turner type Aperture ratio: F=3, Focal length: 100 mm, Diffraction grating: grooves/mm=600, Brazed wavelength=1 µm, Wavelength resolution: 2 nm Detector: NIR PMT R5509-42 or R5509-72 Exclusive cooler PC176TSCE005 [Cooling Temperature: -80 °C] Sample cell: LN2 dewar or without Signal processing: Lock-in amplifier or photon counter ISYSTEM CONFIGURATION WITH CW LASER + LOCK-IN AMPLIFIER OPTICAL CHOPPER MIRROR FILTER LASER MIRROR LN2 DEWAR DRY NITROGEN LIQUID NITROGEN CONTAINER LENS COOLER LENS FILTER MONOCHROMATOR LOCK-IN AMP NIR-PMT SAMPLE COMPUTER TPMOC0155EA GREFERENCE Photocathode and Photomultiplier tubes 1. 2. M. Niigaki, T. Hirohata, T. Suzuki, N. Oishi, S. Furuta, H. Kan and T. Hiruma, "Near Infrared Photomultiplier with Transferred Electron Photocathode", Bulletin of the Research Institute of Electronics, Shizuoka Univ. 30-3, 189 (1995) M. Niigaki, T. Hirohata, T. Suzuki, H. Kan and T. Hiruma, "Field-assisted photoemission from InP/InGaAsP photocathode with p/n junction", Appl. Phys. Lett., 71, 2493 (1997) Photoluminescence 3. 4. 5. 6. 7. 8. 9. S. Furuta, K. Kuroyanagi, M. Niigaki, T. Hirohata, H. Kan and T. Hiruma, "Characterization of Doped-Si and SiGe Quantum Well Using Near-Infrared Photomultiplier Tube", Bulletin of the Research Institute of Electronics, Shizuoka Univ. 30-3, 233 (1995). S. Fukatsu, H. Akiyama, Y. Shiraki and H. Sakaki, J. Cryst. Growth, "Quantitative analysis of light emission from SiGe quantum wells", 157 1 (1995) S. Fukatsu, H. Akiyama, Y. Shiraki and H. Sakaki, "Radiative recombination in near-surface strained Si1-xGex/Si quantum wells", Appl. Phys. Lett., 67, 3602 (1995) S. Fukatsu, Y. Mera, M. Inoue, K. Maeda, H. Akiyama and H. Sakaki, "Time-resolved D-band luminescence in strain-relieved SiGe/Si", Appl. Phys. Lett., 68, 1889 (1996) M. Tajima, S. Ibuka, H. Aga and T. Abe, "Characterization of bond etch-back silicon-on-insulator wafers by photoluminescence under ultraviolet excitation", Appl. Phys. Lett., 70, 231 (1997) M. Tajima and S. Ibuka, "Luminescence due to electron-hole condensation in silicon-on-insulator", Jpn. J. Appl. Phys., 84, 2224 (1998) Y. Mita, M. Akami and S. Murayama, "Infrared photoluminescence and optical characteristics in Ge-doped ZnSe crystals", Appl. Phys. Lett., 76, 2223 (2000) 10. Takashi Suemasu, Yoichiro Negishi, Kenichiro Takakuma and Fumio Hasegawa, "Room Temperature 1 µm Electroluminescence from a SiBased Light Emitting Diode with β-FeSi2 Active Region", Jpn. J. Appl. Phys., 39, L1013 (2000) 11. Shigero Ibuka and Michio Tajima, "Characteristics of Silicon-on-Insulator Wafers by Photoluminescence Decay Lifetime Measurement", Jpn. J. Appl. Phys., 39, L1124 (2000) Singlet oxygen 12. O. Shimizu, J. Watanabe, K. Imakubo and S. Naito, "Formation of Singlet Oxygen Photosensitized by Aromaic Amino Acids in Aqueous Solutions", Chemistry Lett., 19, 203 (1997) 13. O. Shimizu, J. Watanabe and K. Imakubo, "Photon-Counting Technique Facilitates both Time-and Spectra-Resolved Measurements of Near-IR Emission of Singlet Oxygen O2(1∆g) in Aqueous Solution", J. Phys. Soc. Jpn., 66, 268 (1997) SPECIFICATIONS GGENERAL Parameter Spectral Response Photocathode Window Dynode Material Minimum Effective Area Material Secondary Emitting Surface Structure Number of Stage R5509-42 300 to 1400 InP/InGaAsP 3×8 Borosilicate glass Cu-BeO Line focused 10 21-pin base -80 R5509-72 300 to 1700 InP/InGaAs Unit nm — mm — — — — — °C Base Recommended Operating Ambient Temperature GMAXIMUM RATING (Absolute maximum values) Parameter Between Anode and Cathode Supply Voltage Between Anode and Last Dynode Average Anode Current Storage Ambient Temperature Operating Ambient Temperature Value 1750 250 2 -90 to +50 -90 to -70 Unit V dc V dc µA °C °C GCHARACTERISTICS (at -80 °C, Supply voltage: -1500 V dc) Parameter Cathode Sensitivity Anode Sensitivity Gain Anode Dark Current b Anode Dark Counts b Time Response Quantum Efficiency Radiant a Radiant a a Anode Pulse Rise Time Electron Transit Time Transit Time Spread NOTE: aat 1300 nm (R5509-42), at 1500 nm (R5509-72) R5509-42 Min. Typ. Max. Min. 0.48 — — 0.29 5 — — 3.5 1000 — — 700 2 × 105 1 × 106 — 2 × 105 — 5 — 10 — 2 × 104 — — — — 3 — — — 23 — — — 1.5 — bAfter 30 minutes' storage in darkness R5509-72 Typ. — — — 1 × 106 50 2 × 105 3 23 1.5 Max. — — — — 100 — — — — Unit % mA/W A/W — nA s-1 ns ns ns The dedicated coolers PC176TSCE005 and PC176TSCE006 are shipped after adjusting the voltage divider circuit to provide the optimum voltage distribution ratio that best matches the PMT. DIMENSIONAL OUTLINE AND BASING DIAGRAM (Unit: mm) 51 ± 1 3 Top View 33° ± PIN No.3 PIN No.1 [Cautions for operation] 2 PHOTOCATHODE (3 × 8) 20 ± 1 PIN No.14 GOperate the tube at the anode current less than 2 µA while the entire photocathode is illuminated in order to avoid the photocathode damage due to excessive cathode current. GIn order to protect the photocathode, the high voltage should be increased or decreased gradually. GWhen the R5509-42 or -72 shall to be operated, do not supply the high voltage before the tube is cooled down to -70 °C at least. GUse the exclusive cooler PC176TSCE005 or PC176TSCE006 for cooling. 8 °± 90 2. 5 15° 88 ± 2 Bottom View IC IC IC IC P7 DY10 6 DY8 5 DY6 DY9 DY7 [Warranty] GA cooler other than specified may cause a trouble in the tube like loss of performance or a mechanical damage. Any trouble caused in association with a cooler other than specified shall not be subject to warranty. GHamamatsu photomultiplier tubes are warranted to the original purchase for a period of 12 months following the date of shipment. The warranty is limited to repair or replacement of any defective material due to defects in workmanship or materials used in manufacture. HA COATING PHOTOCATHODE LIGHT SHIELD 8 9 10 11 12 4 3 14 MAX. 2 DY4 1 DY2 K 13 DY5 14 15 DY3 16 DY1 17 IC DY : K: 18 B P: 19 20 IC B: 21 IC IC SHORT PIN TPMHA0283EC Dynode Photocathode Anode Bias Electrode IC : Internal Connection (Do not use) TPMHA0284EC CHARACTERISTICS FIGURES GSpectral Response TPMHB0426EB GTypical Gain (R5509-42, -72) -80 °C TPMHB0403EA 102 108 CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) CATHODE RADIANT SENSITIVITY 101 R5509 - 72 107 106 100 GAIN QUANTUM EFFICIENCY 10-1 R5509 - 42 10-2 10-3 200 400 600 800 1000 1200 1400 1600 1800 105 104 103 102 500 700 1000 1500 2000 WAVELENGTH (nm) * Spectral response characteristics when used with the dedicated cooler SUPPLY VOLTAGE (V) GTemperature Characteristics of Dark Current (After 30 minutes storage in darkness) 10-6 TPMHB0425EA GSingle Photoelectron Pulse Height Distribution (PHD) R5509-42 1.4 TPMHB0404EA at 1500V COUNTS PER CHANNEL (1 × 104) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 200 10-7 R5509-72 WAVELENGTH OF INCIDENT LIGHT : 1300 nm : -1500 V dc SUPPLY VOLTAGE SIGNAL + DARK COUNTS : 33 600 s-1 : 16 900 s-1 DARK COUNTS AMBIENT TEMPERATURE : -80 °C DARK CURRENT (A) PHOTON + DARK 10-8 R5509-42 DARK 10-9 400 600 800 1000 10-10 -90 CHANNEL NUMBER (ch) -80 -70 TEMPERATURE (°C) GOutput Waveform (R5509-42) TPMHB0406EA R5509-72 14 TPMHB0428EA COUNTS PER CHANNEL (1 × 104) 12 10 8 6 4 DARK OUTPUT VOLTAGE [1 mV/Div] WAVELENGTH OF INCIDENT LIGHT : 1500 nm : -1500 V dc SUPPLY VOLTAGE SIGNAL + DARK COUNTS : 298 000 s-1 : 175 000 s-1 DARK COUNTS AMBIENT TEMPERATURE : -80 °C PHOTON + DARK SUPPLY VOLTAGE : -1500 V dc RISE TIME : 2.40 ns FALL TIME : 6.36 ns WAVELENGTH : 1300 nm AMBIENT TEMPERATURE : -80 °C RL : 50 Ω 2 0 0 200 400 600 800 1000 CHANNEL NUMBER (ch) TIME [5 ns/Div] RELATED PRODUCTS Exclusive cooler PC176TSCE005 and PC176TSCE006 for R5509-42, -72 PC176TSCE005 and PC176TSCE006 are exclusively designed coolers for R5509-42 and -72 using liquid nitrogen. The dark current of R5509-42 and -72 will be reduced drastically by cooling so that the PMT will be able to detect very weak light. The cooler housing is magnetically and electrostatically shielded excluding external noises to provide very stable and high S/N ratio measurement. Hamamatsu also provides the PC176TSCE006 cooler suitable for a selfpressurized liquid nitrogen container. IFEATURES GTemperature controllable range: 0 to -100 °C (R5509-42, -72 operating range shall be: -70 to -90 °C) GExclusive socket assembly with load resistor selectable circuit GBuilt-in magnetic electrostatic shield GBuilt-in warning buzzer for liquid nitrogen supply shortage ISPECIFICATIONS Parameter Coolant medium Temperature Controllable Range Cool-down Time Liquid Nitrogen Consumption rate (Max.) Gas Pressure Dry Nitrogen Consumption rate Voltage Divider Current -HV Connector Socket Assembly Signal Connector Load Resistor AC Input Voltage Power Consumption Operating Ambient Temperature Cooling Unit Weight Controller and others Components PC176TSCE006 Liquid Nitrogen Vaporization 0 °C to -100 °C (continuously adjustable) Approx. 2 h (-80 °C setting) 0.75 L/h (-100 °C setting) 35 kPa — 47 L (14.7 MPa)/100 h — 158 µA (PMT Supply Voltage: -1750 V) SHV-R BNC-R 50 Ω/ 1 kΩ/ 100 kΩ/ 10 MΩ/ Open 100 V to 120 V, 220 V to 240 V (50/60 Hz) 15 VA Less than +30 °C Approx. 6 kg Approx. 11 kg Approx. 11 kg Cooling Unit, Controller, Solenoid Control Cable, Cooling unit, Controller, Solenoid Control Cable, Flow Solenoid Valve, 3/8" OD Rubber Tube, Limit Valve, Solenoid Valve, Insulated Transfer Insulated Transfer Hose, LN2 Transfer Head for Hose, Control Solenoid with Connecting Hose with 35 mm to 40 mm Neck OD LN2 Dewar 3/4-16UNF or PT 1/4 Screws in End PC176TSCE005 IDIMENSIONAL OUTLINE (Unit: mm) Cooling unit 222 CENTER OF PHOTOCATHODE 330 111 86 6-M3 222 13 109 80.5 43 PHOTOCATHODE* (3 × 8) 13 111 O-RING 86 PHOTOMULTIPLIER TUBE PHOTOCATHODE 152 120 152 57 LN2 OUT (IN) SOCKET ASSEMBLY LN2 IN (OUT) SIDE VIEW -HV (SHV-R) SIGNAL OUTPUT (BNC-R) SOCKET ASSEMBLY 152.4 85.7 66.7 114 152.4 LOAD RESISTOR ADJUSTOR SWITCH 4-No.10-32 UNC-2B 4-M6 TACCA0151EF PHOTOMULTIPLIER TUBE 59 12 0 6-M3 111 EVACUATED WINDOW WINDOW FLANGE HOUSING FRONT PANEL BOTTOM VIEW * The socket assembly can be rotated by 90 degrees in order to match the shape of the input light. ICONNECTION DIAGRAM GPC176TSCE005 *PRESSURE REGULATOR COOLING UNIT SOLENOID CONTROL CABLE WINDOW HEATER CABLE CONTROLLER AC 100 V to 120 V, AC 200 V to 240 V INSULATED TRANSFER HOSE IOTHER ACCESSORIES REQUIRED GLiquid nitrogen dewar Non-pressurized dewar having a capacity of 10 to 50 litters, and the neck outer diameter between 35 and 40 mm. GHigh voltage power supply for the photomultiplier tube (negative high voltage) Output voltage: more than -1750 V Output current: more than 0.2 mA Low ripple, High stability GDry nitrogen gas, pressure regulator (secondary pressure 35 kPa), pressure gauge In order to supply a proper amount of liquid nitrogen to the cooling unit, an external pressure needs to be added to the dewar. A pressure regulator capable of reducing a secondary pressure to 35 kPa is necessary when used with a dry nitrogen gas container. Connect the 3/8" rubber tube to the exit of the pressure regulator. 3/8" OD RUBBER TUBE SOLENOID VALVE *DRY NITROGEN GAS SOURCE LN2 TRANSFER HEAD *DEWAR OF LN2 *NOT SUPPLIED TACCC0090EC GPC176TSCE006 3/4-16UNF PT1/4 SOLENOID VALVE COOLING UNIT WINDOW HEATER CABLE CONTROLLER AC 110 V to 120 V, AC 220 V to 240 V INSULATED TRANSFER HOSE IOTHER ACCESSORIES REQUIRED GLiquid nitrogen dewar Self pressurized dewar having a matching screw of either 3/4-16UNF felmale (removable) or PT 1/4 male. GHigh voltage power supply for the photomultiplier tube (negative high voltage) Output voltage: more than -1750 V Output current: more than 0.2 mA Low ripple, High stability SOLENOID CONTROL CABLE *LN2 DEWAR The maximum pressure from the LN2 dewer to the solenoid valve is 300 kPa. *NOT SUPPLIED TACCC0116EA RELATED PRODUCTS Peripheral devices and options GRelay optics The relay optics is designed for efficient light collection from the exit slit of a monochromator to the PMT photocathode. Optical axis adjustment can also be made precisely. A mechanical shutler is mounted. For more information, please contact our sales office. GInput window with condenser lens The input window of the PC176TSCE005 and PC176TSCE006 are also available with a condenser lens mounted on its inner side. This window efficiently collects the incoming collimated light onto the PMT photocathode and can be easily replaced with the standard window. GHigh-voltage power supply C3350 Output voltage (DC): 0 V to ±3000 V, Output current: 10 mA, Bench-top high-voltage power supply with high stability and low ripple. Related Products for Photon Counting GPreamplifiers It is recommended that a fast preamplifier is used in front of the photon counting unit C3866 or C6465. C6438 (DC to 50 MHz) Gain: 20 dB C5594 (50 kHz to 1.5 GHz) Gain: 36 dB GPhoton counting units C3866 high-speed type (maximum count rate: up to 107 s-1) with built-in prescaler C6465 standard type (maximum count rate: up to 106 s-1) These photon counting units convert photoelectron pulses from the R5509 series PMT into a 5 V digital signal. Photon counting with a high S/N ratio can be performed by connecting the output to a pulse counter. We recommend using these photon counting units in conjunction with a C6438 or C5594 series preamplifiers. GPhoton counting board M7824, M8503 The M7824 photon counting board is designed for direct plug-in to the ISA bus slot in a PC. The M7824 has a pulse counter that counts photoelectron pulses converted into logic (TTL) signals by a photon counting unit, and transfers them to the PC. The built-in gate function with 50 µs (Min.) internal gate facilitates photon counting with a wide dynamic range. The M8503 has fast internal gating of 50 ns (minimum) enabling fast time resolved measurement in highly repetitive (1 MHz Max.) phenomena like fluorescence. Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K HOMEPAGE URL http://www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se TPMH1267E02 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it SEPT. 2001 IP Printed in Japan (1500)