R5900U-01

PHOTOMULTIPLIER TUBE R5900U / R7600U SERIES High Speed Response, 30 mm Square, Bialkali and Multialkali Photocathode 10-stage, Head-on Type FEATURES G Effective Area: 18 mm × 18 mm G High Cathode Sensitivity Luminous 200 µA/lm Typ. (R5900U-01 Type) Luminous 500 µA/lm Typ. (R5900U-20 Type) G High Speed Response G Wide Dynamic Range G Compact G Weight: Approx. 33 g APPLICATIONS G High Energy Physics G Flow Cytometer (R5900U-01, -20 Type) G DNA Sequencer (R5900U-01, -20 Type) G Pollution Monitoring (NOx) (R5900U-01, -20 Type) Figure 1: Typical Spectral Response 100 TPMHB0741EB 100 TPMHB0742EB R5900U-04 CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) 10 R7600U R7600P CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) 10 R5900U-01 R7600U-03 1 R5900U-20 1 0.1 0.1 CATHODE RADIANT SENSITIVITY QUANTUM EFFICIENCY 0.01 100 200 300 400 500 600 700 800 900 1000 CATHODE RADIANT SENSITIVITY QUANTUM EFFICIENCY 0.01 100 200 300 400 500 600 700 800 900 1000 WAVELENGTH (nm) WAVELENGTH (nm) Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. PHOTOMULTIPLIER TUBE R5900U / R7600U SERIES Cathode Characteristics Maximum Ratings D Supply Average Luminous Red/ Blue Dynode Voltage Anode PhotoSensitivity White Radiant Between Peak Window Range Index Ratio Output Wavelength cathode Material Structure Anode Current (CS 5-58) (R-68) and Material / Stages Typ. Typ. Typ. Typ. Cathode in Total Min. (V) (mA) (µA/lm) (µA/lm) (mA/W) (nm) (nm) 80 — 9.5 80 60 900 0.1 MC/10 BA K 420 300 to 650 65 0.25 — 200 150 900 0.1 MC/10 MA K 420 300 to 850 80 — 9.5 80 60 900 0.1 MC/10 BA U 420 185 to 650 65 0.25 — 200 150 900 0.1 MC/10 MA U 420 185 to 880 78 0.4 — 500 350 900 0.1 MC/10 MA K 530 300 to 920 80 — 9.5 80 60 900 0.1 MC/10 BA K 420 300 to 650 A B C Spectral Response Type No. R7600U R5900U-01 R7600U-03 R5900U-04 R5900U-20 R7600P NOTE: A BA: Bialkali, MA: Multialkali B K: Borosilicate glass, U: UV glass C MC: Metal channel D The maximum operating ambient temperature range is -30 °C to +50 °C Figure 2: Typical Gain 108 TPMHB0265EF Figure 3: Time Response (Example) TPMHB0263ED 107 106 105 GAIN 104 R5900U-01 R5900U-04 R5900U-20 OUTPUT VOLTAGE (20 mV/div) R7600U R7600U-03 R7600P 103 102 SUPPLY VOLTAGE: 800 V RISE TIME: 1.5 ns FALL TIME: 2.7 ns WIDTH: 3.2 ns RL: 50 Ω 101 TIME (2 ns/div) 100 400 600 800 1000 Figure 4: Single Photon Counting (Example) SUPPLY VOLTAGE (V) 0.3 TPMHB0776EA COUNTS PER CHANNEL TYPE: R7600P PHOTON + DARK COUNTS: 4934 s-1 DARK COUNTS: 109 s-1 WAVELENGTH OF INCIDENT LIGHT: 400 nm SUPPLY VOLTAGE: 800 V 0.2 0.1 PHOTON + DARK DARK 0 0 200 400 600 800 1000 PULSE HEIGHT / CHANNEL NUMBER (ch) Anode to Cathode Supply Voltage (V) 800 800 800 800 800 800 Anode Characteristics Luminous Gain Min. (A/lm) 40 50 40 50 100 40 Typ. (A/lm) 160 200 160 200 500 160 Typ. 2.0 × 106 1.0 × 106 2.0 × 106 1.0 × 106 1.0 × 106 2.0 × 106 Dark Current (After 30 min) Dark Count Typ. (nA) 2 10 2 10 20 — Max. (nA) 20 50 20 50 50 — Typ. — — — — — 200 Max. — — — — — 500 Pulse Linearity Time Response Rise Transit 5% 2% Time Time TTS Deviation Deviation Typ. Typ. Typ. (mA) (mA) (ns) (ns) (ns) Type No. 1.4 9.6 0.35 30 60 R7600U R5900U-01 R7600U-03 R5900U-04 R5900U-20 R7600P VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE Electrodes K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 P Ratio 1.5 1.5 1.5 1 1 1 1 1 1 1 1 Supply Voltage: 800 V, K: Cathode, Dy: Dynode, P: Anode Figure 5: TTS Characteristic (Example) TPMHB0264EC Figure 6: Effect of Magnetic Fields on Anode Output (Example) 110 TPMHB0261EE Ebb: -800 V 104 SUPPLY VOLTAGE: 800 V FWHM: 0.35 ns FWTM: 0.72 ns 100 Y-AXIS RELATIVE COUNTS 103 RELATIVE OUTPUT (%) 80 102 60 X-AXIS 101 40 100 20 TIME (0.5 ns/div) Z-AXIS 0 -80 -60 -40 -20 0 20 40 60 80 MAGNETIC FLUX DENSITY (mT) Z + – – Y + + X – TOP VIEW Guide Corner (at Rear Side) PHOTOMULTIPLIER TUBE R5900U / R7600U SERIES Figure 7: Dimensional Outline and Basing Diagram (Unit: mm) K IC (Dy10) IC Dy1 Dy2 Dy3 Dy4 IC (Dy10) CUT (K) 22.0 ± 0.5 0.6 ± 0.4 4.4 ± 0.7 2.54 PITCH IC IC P IC IC IC IC 123456789 32 10 11 31 30 12 GUIDE 29 13 CORNER 28 14 15 27 16 26 25 24 23 22 21 20 19 18 17 30.0 ± 0.5 25.7 ± 0.5 18 MIN. 12.0 ± 0.5 IC IC IC IC IC IC IC 4 MAX. PHOTOCATHODE EFFECTIVE AREA INSULATION COVER SIDE VIEW BOTTOM VIEW CUT (K) Dy10 Dy9 Dy8 Dy7 Dy6 Dy5 IC (Dy10) CUT (K) 29- 0.45 K : Photocathode Dy : Dynode P : Anode CUT : Short Pin IC : Internal Connection (Don't Use) Basing Diagram TOP VIEW TPMHA0278EI [ACCESSORIES] (Unit: mm) G Scoket E678-32B 22.86 20.32 SOLD SEPARATELY G D Type Scoket Assembly E5996 30.0 ± 0.5 PMT SOCKET PIN No. 30 SIGNAL GND SIGNAL OUTPUT RG-174/U (BLACK) R11 R10 R9 R8 C3 C2 C1 4.45 2.92 2.54 PIN No.1 30.0 ± 0.5 P R14 DY10 DY9 DY8 DY7 24 R13 23 22.86 20.32 R12 12.7 15.0 ± 0.5 22 0.51 21 R7 HOUSING (INSULATOR) 12.7 1.57 DY6 DY5 20 R6 19 R1 to R3 : 330 kΩ R4 to R11 : 220 kΩ R12 to R14 : 51 Ω R15 : 1 MΩ C1 to C3 : 10 nF 450 R5 DY4 DY3 DY2 7 R4 6 MATERIAL: Glass Epoxy TACCA0094ED R3 5 R2 K DY1 4 R15 1 R1 -HV : RG-174U (RED) POWER SUPPLY GND TACCA0234EC WARNING ~ High Voltage ~ The product is operated at high voltage potential. Further, the metal housing of the product is connected to the photocathode (potential) so that it becomes a high voltage potential when the product is operated at a negative high voltage (anode grounded). Accordingly, extreme safety care must be taken for the electrical shock hazard to the operator or the damage to the other instruments. * PATENT: USA: 5410211 and other(9), GBR: 551767 and other(9), DEU: 69209809 and other(9), FRA: 551767 and other(9), JPN: 3078905 and other(9) WEB SITE www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se TPMH1291E03 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it SEPT. 2007 IP