PHOTOMULTIPLIER TUBE
R5984
New Electro-Optical Design Wide Effective Area, High Sensitivity Multialkali Photocathode 185 nm to 900 nm, 28 mm (1-1/8 Inch) Diameter, 9-stage, Side-on Type
G New Electro-Optical Design Structure G Wide Effective Area ................................... 10 mm × 24 mm G High Cathode Sensitivity (Luminous) ..... 300 µA/lm G High Anode Sensitivity (Luminous) ......... 3000 A/lm G Basing Diagram is same as the R928
FEATURES
APPLICATIONS
G Spectroscopy G Biomedical G Environmental Monitoring
Figure 1: Typical Anode Uniformity
SPECIFICATIONS
GENERAL
Description/Value Parameter Unit 185 to 900 Spectral Response nm Wavelength of Maximum Response 400 nm MateriaI Multialkali — Photocathode Minimum Effective Area 10 × 24 mm Window Material UV glass — Structure Circular Cage — Dynode Number of Stages 9 — Direct Anode to Last Dynode 4 pF Interelectrode Anode to All Other 6 pF Capacitances Electrodes Base 11-pin base — Weight Approx. 45 g Operating Ambient Temperature -30 to +50 °C Storage Temperature -30 to +50 °C SuitabIe Socket E678-11A (Sold Separately) — E717-63 (Sold Separately) SuitabIe Socket Assembly — E717-74 (Sold Separately)
10 MIN. 2.5 ± 0.5 2.5 ± 0.5
CENTER OF PHOTOCATHODE
SUPPLY VOLTAGE : 1000 V SPOT SIZE : 0.5 mm WAVELENGTH : 420 mm
100
RELATIVE SENSITIVITY (%)
80
60 8 mm 40
* The center of the R5984 photocathode is slightly laid out to the left side from guide key, light path should be adjusted by 2.5 mm to the left side from the guide key.
20
0 8 7 6 5 4 3 2 1 0 1 2 3 4 DISTANCE FROM GUIDE KEY (mm)
TPMSB0122EB
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
PHOTOMULTIPLIER TUBE R5984
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter Supply Voltage Between Anode and Cathode Between Anode and Last Dynode Value 1250 250 0.1 Unit V V mA
Average Anode Current A
CHARACTERISTlCS (at 25 °C)
Parameter Quantum Efficiency at 260 nm (Peak) Luminous B Radiant at 400 nm (Peak) Blue Sensitivity Index (CS 5-58) C Red/White Ratio D Luminous E Radiant at 400 nm Min.
— 140 — — — 400 — — — — — — — —
Typ.
26 300 76 9 0.32 3000 7.6 × 105 1 × 107 5 1.7 × 10-16 2.2 22 0.1 1
Max
— — — — — — — — 50 — — — — —
Cathode Sensitivity
Anode Sensitivity
Gain E Anode Dark Current F (After 30 min Storage in Darkness) ENI (Equivalent Noise Input) G Anode Pulse Rise Time H Time response Electron Transit Time J Light Hysteresis Anode Current Stability K Voltage Hysteresis
Unit % µA/lm mA/W — — A/lm A/W — nA W ns ns % %
NOTES
A: Averaged over any interval of 30 seconds maximum. B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856 K. Supply voltage is 100 V between the cathode and all other electrodes connected together as anode. C: The value is cathode output current when a blue filter(Corning CS 5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as Note B. D: Red/White ratio is the quotient of the cathode current measured using a red filter (Toshiba R-68) interposed between the light source and the tube by the cathode current measured with the filter removed under the same condition as Note B. E: Measured with the same light source as Note B and with the anode-tocathode supply voltage and voltage distribution ratio shown in Table 1 below. F: Measured with the same supply voltage and voltage distribution ratio as Note E after removal of light. G: ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. ENI = where 2q.ldb.G. ∆f S
J: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. In measurement, the whole photocathode is illuminated. K: Hysteresis is temporary instability in anode current after light and voltage are applied. Hysteresis = lmax. – lmin. × 100 (%) li
ANODE CURRENT
li
l max. l min. TIME
0
5
6
7 (minutes)
TPMSB0002EA
q = Electronic charge (1.60 × 10-19 coulomb). ldb = Anode dark current (after 30 minute storage) in amperes. G = Gain. ∆f = Bandwidth of the system in hertz. 1 hertz is used. S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response.
(1)Light Hysteresis The tube is operated at 750 V with an anode current of 1 µA for 5 minutes. The light is then removed from the tube for a minute. The tube is then re-illuminated by the previous light level for a minute to measure the variation. (2)Voltage Hysteresis The tube is operated at 300 V with an anode current of 0.1 µA for 5 minutes. The light is then removed from the tube and the supply voltage is quickly increased to 800 V. After a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation. Table 1: Voltage Distribution Ratio
Electrode Distribution Ratio K 1 Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 1 1 1 1 1 1 1 1 1 P
H: The rise time is the time for the output pulse to rise from 10 % to 90 % of the peak amplitude when the whole photocathode is illuminated by a delta function light pulse.
SuppIy Voltage: 1000 V, K: Cathode,
Dy: Dynode,
P: Anode
Figure 2: Typical Spectral Response
TPMSB0163EA
Figure 3: Anode Luminous Sensitivity and Gain Characteristics
105
TPMSB0003ED
100
108
CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%)
TYPICAL GAIN
ANODE LUMINOUS SENSITIVITY (A/lm)
104
107
10 QUANTUM EFFICIENCY CATHODE RADIANT SENSITIVITY
103
106
1
102
TYPICAL ANODE SENSITIVITY
105
101
MINIMUM ANODE SENSITIVITY
104
0.1
100
103
0.01 100 200 300 400 500 600 700 800 900 1000
10-1 500
700
1000
102 1500
WAVELENGTH (nm)
SUPPLY VOLTAGE (V)
Figure 4: Typical Temperature Characteristics of Dark Current (at 1000 V, after 30 min storage in darkness)
TPMSB0121EB
100
ANODE DARK CURRENT (nA)
10
1
0.1
0.01 -30
-20
-10
0
+10
+20
+30
+40
+50
TEMPERATURE (°C)
GAIN
PHOTOMULTIPLIER TUBE R5984
Figure 5: Dimensional Outline and Basing Diagram (Unit: mm)
28.5 ± 1.5 10 MIN. 2.5 ± 0.5 PHOTOCATHODE
DY6 6
Figure 6: Socket (Unit: mm)
E678-11A
49 38
Sold Separately
24 MIN.
7
80 MAX.
DY4 4
8 DY8 9 DY9 10 P 1 11 K
29
5
49.0 ± 2.5
94 MAX.
DY3 3 DY2 2
DY1
Bottom View (Basing Diagram)
32.2 ± 0.5
11 PIN BASE JEDEC No. B11-88
TACCA0064EA
TPMSA0035EB
Figure 7: D Type Socket Assembly (Unit: mm) Sold Separately
E717-63 E717-74
HOUSING (INSULATOR) SOCKET PIN No. 10 P R10 DY9 9 R9 DY8 DY7 8 R8 7 R7 2 DY6 DY5 6 R6 5 R5 31.0 ± 0.5 HOUSING (INSULATOR) DY4 DY3 DY2 4 R4 3 R3 2 R2 DY1 K 1 R1 11 -HV AWG22 (VIOLET) R13 4- 2.8 * "Wiring diagram applies when -HV is supplied." To supply +HV,connect the pin "G" to+HV, and the pin "K" to the GND. R1 to R10 : 330 kΩ C1 to C3 : 10 nF 7 C1 C2 26.0±0.2 32.0±0.5 TOP VIEW 14.0±0.5 C3 SOCKET PIN No. 10 P R10 DY9 DY8 DY7 DY6 DY5 DY4 DY3 DY2 0.7 DY1 K 9 R9 8 R8 7 R7 6 R6 5 R5 4 R4 3 R3 2 R2 1 R1 11 -HV (K) R1 to R10 : 330 kΩ C1 to C3 : 10 nF C1 C2 C3 SIGNAL OUTPUT (A) GND (G)
5 33.0 ± 0.3 3.5
PMT
SIGNAL GND SIGNAL OUTPUT RG-174/U(BLACK) POWER SUPPLY GND AWG22 (BLACK)
PMT 32.0±0.5 26.0±0.2
38.0 ± 0.3 49.0 ± 0.3 29.0 ± 0.3 4
0.7
30.0 +0 -1
A G
2.7
22.4±0.2 SIDE VIEW
K
450 ± 10
POTTING COMPOUND
° 10
30°
BOTTOM VIEW
TACCA0002EH TACCA0277EA
* Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply.
Warning–Personal Safety Hazards Electrical Shock–Operating voltages applied to this device present a shock hazard.
WEB SITE www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se TPMS1033E03 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it
18
DIRECTION OF LIGHT
4
3.5
DY5
5
DY7
33
JUL. 2006 IP