R9800

PHOTOMULTIPLIER TUBE R9800 For Scintillation Counting, Fast Time Response 25 mm (1 Inch) Diameter, Bialkali Photocathode, 8-stage, Head-on Type SPECIFICATIONS GENERAL Parameter Spectral Response Wavelength of Maximum Response Window Material MateriaI Photocathode Minimum Effective Area Structure Dynode Number of Stages Base Operating Ambient Temperature Storage Temperature Description / Value 300 to 650 420 Borosilicate glass Bialkali 22 Linear focused 8 Flying lead type -30 to +50 -80 to +50 Unit nm nm — — mm — — — °C °C MAXIMUM RATINGS (Absolute Maximum Values) Supply Voltage Average Anode Current Parameter Between Anode and Cathode Value 1500 0.1 Unit V mA CHARACTERISTICS (at 25 °C) Cathode Sensitivity Parameter Luminous (2856 K) Blue Sensitivity Index (CS 5-58) Luminous (2856 K) Min. 70 9 5 — — — — — — Typ. 95 11 100 1.1 × 106 5 1.0 11 270 30 Max. — — — — 50 — — — — Unit µA/lm — A/lm — nA ns ns ps mA Anode Sensitivity Gain Anode Dark Current (After 30 minute storage in darkness) Anode Pulse Rise Time Time Response Electron Transit Time Transit Time Spread (FWHM) Pulse Linearity (±2 % deviation) NOTE: Anode characteristics are measured with a voItage distribution ratio and supply voltage shown below. VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Electrodes Ratio 4 1.5 1.5 1 1 1 1 1 1 SuppIy Voltage: 1300 V, K: Cathode, Dy: Dynode, P: Anode P Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2009 Hamamatsu Photonics K.K. PHOTOMULTIPLIER TUBE R9800 Figure 1: Typical Spectral Response 100 TPMHB0223EB Figure 2: Typical Gain 107 TPMHB0755EA CATHODE RADIANT SENSITIVITY (mA / W) QUANTUM EFFICIENCY (%) CATHODE RADIANT SENSITIVITY 10 106 QUANTUM EFFICIENCY GAIN 400 600 800 1 105 0.1 104 0.01 200 103 500 700 1000 1500 2000 WAVELENGTH (nm) SUPPLY VOLTAGE (V) Figure 3: Dimensional Outline and Basing Diagram (Unit: mm) 25.4 ± 0.5 22 MIN. FACE PLATE A Temporary Base Removed DY7 DY5 PHOTOCATHODE 55 ± 2 DY3 6 DY1 5 8 7 P 10 12 13 DY8 DY6 14 DY4 15 DY2 SEMI-FLEXIBLE LEADS A 13 MAX. 12 PIN BASE JEDEC No. B12-43 B 37.3 ± 0.5 55 MIN. NC 5 DY7 4 DY5 3 2 DY3 1 DY1 1 K B Bottom View P 6 NC 7 8 9 DY6 10 DY4 11 12 K TPMHA0521EC DY8 DY2 NOTES The material in the R9800 contains beryllium. Please follow the applicable regulations regarding disposal of hazardous materials and industrial wastes in your country, state, region or province. WEB SITE www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se TPMH1298E03 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it OCT. 2009 IP