R9876

PHOTOMULTIPLIER TUBE R9876 High QE Multialkali Photocathode 28 mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type FEATURES GHigh Sensitivity at 900 nm Quantum Efficiency .................................. 0.5 % (Typ.) Radiant ................................................. 4 mA/W (Typ.) GWide Spectral Response .................. 185 nm to 950 nm GHigh Signal to Noise Ratio APPLICATIONS GBiomedical Analysis Blood Analyzer, Flow Cytometer, DNA Sequencer GSpectroscopy Fluorescence Spectrometer, Raman Spectrometer, UV–VIS Spectrometer Figure 1: Electro Optical Structure LIGHT Figure 2: Typical Spectral Response 1000 TPMSB0230EA PHOTOELECTRON TRAJECTORIES GRID CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) CONVENTIONAL PMT (R928) 100 GLASS BULB ANODE 10 R9876 PHOTOCATHODE 1st DYNODE 2nd DYNODE 9th DYNODE 1 TPMSC0024EA 0.1 CATHODE RADIANT SENSITIVITY QUANTUM EFFICIENCY 0.01 100 200 300 400 500 600 700 800 900 1000 WAVELENGTH (nm) Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2010 Hamamatsu Photonics K.K. PHOTOMULTIPLIER TUBE R9876 SPECIFICATIONS GENERAL Parameter Description / Value 185 to 950 Spectral Response 380 Wavelength of Maximum Response MateriaI Multialkali Photocathode Minimum Effective Area 8 × 24 UV glass Window Material Structure Circular-cage Dynode Number of Stages 9 4 Anode to Last Dynode Direct Interelectrode Anode to All Other 6 Capacitances Electrodes Base 11-pin base JEDEC No. B11-88 Weight Approx. 45 Operating Ambient Temperature -30 to +50 Storage Temperature -30 to +50 SuitabIe Socket E678–11A (Sold Separately) E717–63 (Sold Separately) SuitabIe Socket Assembly E717–74 (Sold Separately) Unit nm nm — mm — — — pF pF — g °C °C — — — NOTES A: Averaged over any interval of 30 seconds maximum. B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856 K. Supply voltage is 100 V between the cathode and all other electrodes connected together as anode. C: Red / White ratio is the quotient of the cathode current measured using a red filter (Toshiba R-68) interposed between the light source and the tube by the cathode current measured with the filter removed under the same conditions as Note B. D: Measured with the same light source as Note B and with the voltage distribution ratio shown in Table 1 below. Table 1:Voltage Distribution Ratio Electrodes Ratio K 1 Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 1 1 1 1 1 1 1 1 1 P SuppIy Voltage: 1000 V, K: Cathode, Dy: Dynode, P: Anode MAXIMUM RATINGS (Absolute Maximum Values) Parameter Supply Between Anode and Cathode Voltage Between Anode and Last Dynode Average Anode Current A Value 1250 250 0.1 Unit V V mA CHARACTERISTlCS (at 25 °C) Parameter Quantum at 900 nm Efficiency Cathode Luminous B Sensitivity Radiant at 900 nm Red / White Ratio C Anode Luminous D Sensitivity Radiant at 900 nm Gain D Anode Dark Current E (Supply voltage at 1 × 106 Gain) Anode Pulse Rise Time F Time Electron Transit Time G Response Transit Time Spread (T.T.S.) H Min. — 100 — — 50 — — — — — — Typ. 0.5 140 4 0.4 140 4 × 103 1 × 106 0.5 2.2 22 1.2 Max. — — — — — — — 5 — — — Unit % µA/lm mA/W — A/lm A/W — nA ns ns ns E: After 30 min Storage in Darkness F: The rise time is the time for the output pulse to rise from 10 % to 90 % of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. G: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitube. In measurement, the whole photocathode is illuminated. H: Also called transit time jitter. This is the fluctuation in electron transit time between individual pulses in the signal photoelectron mode, and may be defined as the FWHM of the frequency distribution of electron transit times. Figure 3: Dimensional Outline and Basing Diagram (Unit: mm) 28.5 ± 1.5 8 MIN. PHOTOCATHODE DY5 24 MIN. DY4 4 80 MAX. DY3 3 94 MAX. DY2 2 1 11 K DY6 6 DY7 8 DY8 9 DY9 10 P PHOTO CATHODE 5 7 49.0 ± 2.5 DY1 DIRECTION OF LIGHT Bottom View (Basing Diagram) 32.2 ± 0.5 3.25 2.5 6.0 3.5 Cross Section 11 PIN BASE JEDEC No. B11-88 TPMSA0008EA TPMSA0009EB Figure 4: Socket (Unit: mm) E678-11A 49 38 Sold Separately 5 29 18 4 3.5 33 TACCA0064EA PHOTOMULTIPLIER TUBE R9876 Figure 5: D Type Socket Assembly (Unit: mm) E717-63 5 33.0 ± 0.3 3.5 PMT P R10 DY9 9 R9 DY8 DY7 8 R8 7 R7 DY6 DY5 6 R6 5 R5 31.0 ± 0.5 HOUSING (INSULATOR) DY4 DY3 DY2 4 2.7 R4 3 R3 2 R2 DY1 K 1 R1 11 -HV AWG22 (VIOLET) R13 R1 to R10 : 330 kΩ C1 to C3 : 10 nF * "Wiring diagram at above applies when -HV is supplied." To supply +HV,connect the pin "G" to+HV, and the pin "K" to the GND. Refer to "(d) d-2" on page 87 for the connection method. TACCA0002EH TACCA0277EA Sold Separately E717-74 HOUSING (INSULATOR) SIGNAL GND SIGNAL OUTPUT RG-174/U(BLACK) POWER SUPPLY GND AWG22 (BLACK) PMT P 32.0±0.5 26.0±0.2 R10 DY9 DY8 26.0±0.2 32.0±0.5 R1 to R10 : 330 kΩ C1 to C3 : 10 nF 7 2 DY7 DY6 DY5 14.0±0.5 DY4 DY3 DY2 0.7 4- 2.8 DY1 K 9 R9 8 R8 C1 7 R7 6 R6 5 R5 4 R4 3 R3 2 R2 1 R1 11 -HV (K) C1 C2 C3 SOCKET PIN No. 10 SOCKET PIN No. 10 SIGNAL OUTPUT (A) GND (G) C3 C2 38.0 ± 0.3 49.0 ± 0.3 29.0 ± 0.3 4 30.0 +0 -1 0.7 A G 22.4±0.2 K 450 ± 10 POTTING COMPOUND ° 10 30° * Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply. Warning–Personal Safety Hazards Electrical Shock–Operating voltages applied to this device present a shock hazard. WEB SITE www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it TPMS1076E01 AUG. 2010 IP