S10112-256Q

CMOS linear image sensors S10111 to S10114 series Current-output type sensors with variable integration time function The S10111 to S10114 series are self-scanning photodiode arrays designed speci cally as detectors for spectroscopy. The scanning circuit operates at low power consumption and is easy to handle. Each photodiode has a large active area with high UV sensitivity. Features Variable integration time for each pixel Wide active area Pixel pitch: 50 m, 25 m Pixel height: 2.5 mm, 0.5 mm High UV sensitivity Large saturation output charge Applications Spectrophotometry Absolute maximum ratings Parameter Supply voltage Clock pulse voltage Start pulse voltage Integration time control pulse Over ow gate voltage Over ow drain voltage Operating temperature*1 Storage temperature*1 *1: No condensation Symbol Vdd V(CLK) V(ST) V(INT) Vofg Vofd Topr Tstg Condition Ta=25 °C Ta=25 °C Ta=25 °C Ta=25 °C Ta=25 °C Ta=25 °C Value -0.3 to +6 -0.3 to +6 -0.3 to +6 -0.3 to +6 -0.3 to +6 -0.3 to +6 -5 to +65 -10 to +85 Unit V V V V V V °C °C Shape speci cations Type no. S10111-128Q S10111-256Q S10111-512Q S10112-128Q S10112-256Q S10112-512Q S10113-256Q S10113-512Q S10113-1024Q S10114-256Q S10114-512Q S10114-1024Q Number of pixels 128 256 512 128 256 512 256 512 1024 256 512 1024 Pixel pitch ( m) Pixel height (mm) 2.5 50 0.5 Ceramic 0.5 25 2.5 Quartz (t=0.5 mm) Package Window material Weight (g) 3.0 3.5 3.0 3.5 3.0 3.5 3.0 3.5 www.hamamatsu.com 1 CMOS linear image sensors S10111 to S10114 series Recommended terminal voltage (Ta=25 °C) Parameter Supply voltage Clock pulse voltage Start pulse voltage Integration time control pulse voltage Over ow drain voltage Over ow gate voltage High level Low level High level Low level High level Low level Symbol Vdd V(CLK) V(ST) V(INT) Vofd Vofg Min. 4.75 Vdd - 0.25 0 Vdd - 0.25 0 Vdd - 0.25 0 0.5 0.17 Typ. 5 Vdd Vdd Vdd 2 0.2 Max. 5.25 Vdd + 0.25 0.4 Vdd + 0.25 0.4 Vdd + 0.25 0.4 2.5 0.23 Unit V V V V V V Electrical characteristics [Ta=25 °C, Vdd=5 V, Vb=Vofd=2 V, Vofg=0.2 V] Min. 10 k f(CLK) 10 k VR S10111-128Q S10111-256Q S10111-512Q S10112-128Q S10112-256Q S10112-512Q Power P consumption*2 S10113-256Q S10113-512Q S10113-1024Q S10114-256Q S10114-512Q S10114-1024Q S10111/S10112-128Q S10111/S10112-256Q Video line S10111/S10112-512Q capacitance Cv S10113/S10114-256Q (Vb=2 V) S10113/S10114-512Q S10113/S10114-1024Q *2: f(CLK)=250 kHz (S10111/S10114 series), 500 kHz (S10112/S10113 series) Clock pulse frequency Video data rate Parameter S10111/S10114 series S10112/S10113 series Symbol Typ. f(CLK) 0.75 1.75 4.25 1.5 3.5 8.25 3.25 7.25 18.25 1.75 3.75 8.25 10 14 22 13 19 32 Max. 250 k 500 k Unit Hz Hz mW pF 2 CMOS linear image sensors S10111 to S10114 series Electrical and optical characteristics [Ta=25 °C, Vdd=5 V, Vb=Vofd=2 V, Vofg=0.2 V, f(CLK)=200 kHz] Parameter Symbol Min. Typ. Max. Unit Spectral response range 200 1000 nm Peak sensitivity wavelength 750 nm p 0.2 0.6 S10111 series S10112 series 0.04 0.12 pA Dark current ID S10113 series 0.04 0.12 S10114 series 0.2 0.6 S10111 series 110 140 S10112 series 22 28 Saturation output Qsat pC charge S10113 series 11 14 S10114 series 55 70 Saturation exposure*3 Esat 580 mlx · s Photo response non-uniformity*3 *4 *5 PRNU ±3 % *3: Measured with a tungsten lamp of 2856 K *4: Photo response non-uniformity is de ned under the condition that the device is uniformly illuminated by light which is 50 % of the saturation exposure level as follows: PRNU= X/X × 100 (%) X: the average output of all pixels, X: difference between X and maximum or minimum output. *5: Except for the rst and last pixels Spectral response (typical example) 400 (Ta=25 °C) Photo sensitivity (mA/W) 300 200 100 0 200 300 400 500 600 700 800 900 1000 1100 1200 Wavelength (nm) KMPDB0250ED 3 CMOS linear image sensors S10111 to S10114 series Block diagram CLK ST INT Address switch array Active Video Dummy Video Shift register EOS Vdd GND Vofd Vofg Photodiode array Overflow drain KMPDC0232EC Equivalent circuit ST D Q D Q D Q D Q C CLK INT Q C Q C Q C Q EOS Active Video 1st pixel 2nd pixel Last pixel Dummy Video KMPDC0279EB 4 CMOS linear image sensors S10111 to S10114 series Timing chart CLK tpi(ST), integration time ST INT Active Video (available term) EOS Enlarged view tf(CLK) CLK 1/f(CLK) tr(ST) tf(ST) 1st 2nd 3rd 4th tr(CLK) Last pixel 1st 2nd 3rd 4th ST t(ST-CLK) t(CLK-ST) t(INT-CLK) t(CLK-INT) INT should be "high" when not reading pixels. INT tr(INT) Active Video (available term) 1st 2nd tf(INT) 3rd 4th 5th Allow CLK pulse transition from “high” to “low” only one time while ST pulse is “high”. Integration time is determined by the interval between start pulses. Only the switching noise component is output from the Dummy Video line. Do not use the Dummy Video output during integration readout. The INT signal is not needed between EOS and the rising edge of the next ST signal. KMPDC0249ED Parameter Start pulse (ST) interval S1011*-128 S1011*-256 S1011*-512 S1011*-1024 Symbol tpi(ST) tr(INT), tf(INT) t(INT-CLK) t(CLK-INT) tf(ST), tr(ST) tf(CLK), tr(CLK) t(CLK-ST) T(ST-CLK) INT pulse rise and fall times INT pulse - clock pulse timing Clock pulse - INT pulse timing Start pulse rise and fall times Clock pulse duty ratio Clock pulse rise and fall times Clock pulse - start pulse timing Start pulse - clock pulse timing Min. 130/f(CLK) 258/f(CLK) 514/f(CLK) 1026/f(CLK) 0 30 30 0 40 0 20 20 Typ. 20 20 50 20 - Max. 30 1 / [2 × f(CLK)] 1 / [2 × f(CLK)] 30 60 30 - Unit s ns ns ns ns % ns ns ns 5 CMOS linear image sensors S10111 to S10114 series Current-integration readout circuit example and timing chart Readout circuit example Reset MST MCLK PLD CLK ST INT Sensor Cf Amp Buffer Data Video Trigger Active Video EOS C-V Clamp KMPDC0385EB Timing chart MST MCLK ST CLK INT Reset Clamp Trigger Data Video EOS KMPDC0386EA 6 CMOS linear image sensors S10111 to S10114 series Variable integration time function By controlling the clock pulse to the INT terminal, the integration time for each pixel can be changed to any length that is an integer multiple of one readout period. When the clock pulse at the INT terminal is set to “high” at the pixel signal readout timing, then no signal is output from that pixel (see below). This allows the signal charge to continuously accumulate in that pixel as long as no signal is output. For example, when the integration time of one readout period is 100 ms and this function is used to output a signal from a pixel once every 3 readout periods, then the integration time of that pixel will be 300 ms. Using this function to lengthen the integration time of certain pixels makes it possible to effectively detect spectral signals of weak wavelength components. Timing chart (Concept view showing the settings to double, triple and quadruple the integration times at channels 2, 3 and 4, respectively, by using the variable integration time function on the basis of the integration time at channel 1.) CLK ST Readout timing INT 1 ch integration time 2 ch integration time 3 ch integration time 4 ch integration time 1234 1234 1234 1234 1234 Output Invalid data Valid data KMPDC0233EC 7 CMOS linear image sensors S10111 to S10114 series Dimensional outlines (unit: mm) S10111-128Q, S10114-256Q Active area 6.4 × 2.5 3.2 ± 0.3 1 ch 22 12 10.4 ± 0.25 Index mark 31.75 ± 0.3 Direction of scan 5.2 ± 0.2 1 11 Photosensitive surface 0.5 ± 0.05*3 1.3 ± 0.2*1 0.25 10.16 ± 0.25 *1: Distance from upper surface of quartz window to chip surface *2: Distance from photosensitive surface to bottom of package *3: Window thickness KMPDA0060EE 3.0 ± 0.3 0.51 ± 0.05 5.0 ± 0.5 2.54 ± 0.13 25.4 ± 0.13 S10111-256Q, S10114-512Q Active area 12.8 × 2.5 6.4 ± 0.3 1 ch 22 12 10.4 ± 0.25 Index mark 31.75 ± 0.3 Direction of scan 5.2 ± 0.2 1 11 Photosensitive surface 0.5 ± 0.05*3 1.3 ± 0.2*1 0.25 10.16 ± 0.25 3.0 ± 0.3 0.51 ± 0.05 5.0 ± 0.5 2.54 ± 0.13 25.4 ± 0.13 *1: Distance from upper surface of quartz window to chip surface *2: Distance from photosensitive surface to bottom of package *3: Window thickness KMPDA0061EE 1.4 ± 0.2*2 1.4 ± 0.2*2 8 CMOS linear image sensors S10111 to S10114 series S10111-512Q, S10114-1024Q Active area 25.6 × 2.5 12.8 ± 0.3 1 ch 22 12 10.4 ± 0.25 Index mark 40.6 ± 0.3 Direction of scan 5.2 ± 0.2 1 11 Photosensitive surface 0.5 ± 0.05*3 1.3 ± 0.2*1 0.25 10.16 ± 0.25 3.0 ± 0.3 0.51 ± 0.05 5.0 ± 0.5 2.54 ± 0.13 25.4 ± 0.13 *1: Distance from upper surface of quartz window to chip surface *2: Distance from photosensitive surface to bottom of package *3: Window thickness KMPDA0062EE S10112-128Q, S10113-256Q Active area 6.4 × 0.5 3.2 ± 0.3 1 ch 22 12 10.4 ± 0.25 Index mark 31.75 ± 0.3 Direction of scan 5.2 ± 0.2 1 11 Photosensitive surface 0.5 ± 0.05*3 1.3 ± 0.2*1 3.0 ± 0.3 0.51 ± 0.05 5.0 ± 0.5 2.54 ± 0.13 25.4 ± 0.13 10.16 ± 0.25 0.25 *1: Distance from upper surface of quartz window to chip surface *2: Distance from photosensitive surface to bottom of package *3: Window thickness KMPDA0215EE 1.4 ± 0.2*2 1.4 ± 0.2*2 9 CMOS linear image sensors S10111 to S10114 series S10112-256Q, S10113-512Q Active area 12.8 × 0.5 22 6.4 ± 0.3 12 10.4 ± 0.25 1 ch Index mark 31.75 ± 0.3 Direction of scan 5.2 ± 0.2 1 11 Photosensitive surface 0.5 ± 0.05*3 1.3 ± 0.2*1 0.25 10.16 ± 0.25 *1: Distance from upper surface of quartz window to chip surface *2: Distance from photosensitive surface to bottom of package *3: Window thickness KMPDA0216EE 3.0 ± 0.3 0.51 ± 0.05 5.0 ± 0.5 2.54 ± 0.13 25.4 ± 0.13 S10112-512Q, S10113-1024Q Active area 25.6 × 0.5 22 12.8 ± 0.3 12 10.4 ± 0.25 1 ch Index mark 40.6 ± 0.3 Direction of scan 5.2 ± 0.2 1 11 Photosensitive surface 0.5 ± 0.05*3 1.3 ± 0.2*1 0.25 10.16 ± 0.25 3.0 ± 0.3 1.4 ± 0.2*2 1.4 ± 0.2*2 KMPDA0217EE 0.51 ± 0.05 5.0 ± 0.5 2.54 ± 0.13 25.4 ± 0.13 *1: Distance from upper surface of quartz window to chip surface *2: Distance from photosensitive surface to bottom of package *3: Window thickness 10 CMOS linear image sensors S10111 to S10114 series Pin connection Index mark ST INT Vofg Vdd GND GND Vdd Vofd Active Video Dummy Video GND 1 2 3 4 5 6 7 8 9 10 11 22 21 20 19 18 17 16 15 14 13 12 CLK NC NC NC NC NC NC NC NC NC EOS KMPDC0230EC Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Symbol ST INT Vofg Vdd GND GND Vdd Vofd Active Video Dummy Video GND EOS NC NC NC NC NC NC NC NC NC CLK Name of pin Start pulse Integration time control pulse Over ow gate voltage Supply voltage Ground Ground Supply voltage Over ow drain voltage Video output Dummy video output Ground End of scan I/O Input Input Input Input Input Input Input Input Output Output Input Output No connection Clock pulse Input Precautions during use (1) Electrostatic countermeasures This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment. (2) Incident window If dust or dirt gets on the light incident window, it will show up as black blemishes on the image. When cleaning, avoid rubbing the window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. Use soft cloth, paper or a cotton swab moistened with alcohol to wipe dust and dirt off the window surface. Then blow compressed air onto the window surface so that no spot or stain remains. (3) Soldering To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Soldering should be performed within 5 seconds at a soldering temperature below 260 °C. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Type numbers of products listed in the specification sheets or supplied as samples may have a suffix “(X)” which means tentative specifications or a suffix “(Z)” which means developmental specifications. ©2010 Hamamatsu Photonics K.K. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KMPD1090E07 Oct. 2010 DN 11