S10141-1009S

IMAGE SENSOR CCD area image sensor S10140/S10141 series Low readout noise, high resolution (pixel size: 12 µm) S 10140/S10141 series is a family of back-thinned FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S10140/S0141 series can be used as a linear image sensor having a long aperture in the direction of the device length. This makes S10140/S10141 series ideally suited for use in spectrophotometry. The binning operation offers significant improvement in S/N and signal processing speed compared with conventional methods by which signals are digitally added by an external circuit. S10140/S10141 series also features low noise and low dark signal (MPP mode operation). This enables low-light-level detection and long integration time, thus achieving a wide dynamic range. S10140/S10141 series has an effective pixel size of 12 × 12 µm and is available in image areas ranging from 12.288 (H) × 1.464 (V) mm2 (1024 × 122 pixels) up to a large image area of 24.576 (H) × 6.072 (V) mm2 (2048 × 506 pixels). Features Applications l High resolution: pixel size 12 × 12 µm l Non-cooled type: S10140 series One-stage TE-cooled type: S10141 series l Line, pixel binning, area scanning l Greater than 90 % quantum efficiency at peak sensitivity wavelength l Wide spectral response range l Wide dynamic range l MPP operation l High UV sensitivity with good stability l Same pin connections as S7030/S7031 series s Selection guide Type No. S10140-1007 S10140-1008 S10140-1009 S10140-1107 S10140-1108 S10140-1109 S10141-1007S S10141-1008S S10141-1009S S10141-1107S S10141-1108S S10141-1109S Cooling Number of total pixels 1044 × 128 1044 × 256 1044 × 512 2068 × 128 2068 × 256 2068 × 512 1044 × 128 1044 × 256 1044 × 512 2068 × 128 2068 × 256 2068 × 512 l Low readout noise: 4 e-rms Typ. l Fluorescence spectrometer, ICP l Industrial inspection requiring l Semiconductor inspection l DNA sequencer l Low-light-level detection Number of active pixels 1024 × 122 1024 × 250 1024 × 506 2048 × 122 2048 × 250 2048 × 506 1024 × 122 1024 × 250 1024 × 506 2048 × 122 2048 × 250 2048 × 506 Active area [mm (H) × mm (V)] 12.288 × 1.464 12.288 × 3.000 12.288 × 6.072 24.576 × 1.464 24.576 × 3.000 24.576 × 6.072 12.288 × 1.464 12.288 × 3.000 12.288 × 6.072 24.576 × 1.464 24.576 × 3.000 24.576 × 6.072 Suitable multichannel detector head Non-cooled C10150 One-stage TE-cooled C10151 s General ratings Parameter Pixel size Vertical clock phase Horizontal clock phase Output circuit Package W indow *1 *1: Window-less is available upon request. S10140 series S10141 series 12 (H) × 12 (V) µm 2 phases 2 phases One-stage MOSFET source follower 24 pin ceramic DIP (refer to dimensional outlines) Quartz glass AR-coated sapphire 1 CCD area image sensor s Absolute maximum ratings (Ta=25 °C) Parameter Operating temperature Storage temperature OD voltage RD voltage ISV voltage ISH voltage IGV voltage IGH voltage SG voltage OG voltage RG voltage TG voltage Vertical clock voltage Horizontal clock voltage Symbol Topr Tstg VOD VRD VISV VISH VIG1V, VIG2V VIG1H, VIG2H VSG VOG VRG VTG VP1V, VP2V VP1H, VP2H S10140/S10141 series Typ. Max. +30 +70 +30 +18 +18 +18 +15 +15 +15 +15 +15 +15 +15 +15 Unit °C °C V V V V V V V V V V V V Min. -50 -50 -0.5 -0.5 -0.5 -0.5 -10 -10 -10 -10 -10 -10 -10 -10 s Operating conditions (MPP mode, Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Substrate voltage Test point (vertical input source) Test point (horizontal input source) Test point (vertical input gate) Test point (horizontal input gate) Vertical shift register clock voltage Horizontal shift register clock voltage Summing gate voltage Reset gate voltage Transfer gate voltage Symbol VOD VRD VOG VSS VISV VISH VIG1V, VIG2V VIG1H, VIG2H VP1VH, VP2VH VP1VL, VP2VL VP1HH, VP2HH VP1HL, VP2HL VSGH VSGL VRGH VRGL VTGH VTGL Min. -9 -9 Typ. 24 12 3 0 VRD VRD -8 -8 3 -8 5 -8 5 -8 5 -8 3 -8 Max. 0 0 Unit V V V V V V V V V V V V V High Low High Low High Low High Low High Low s Electrical characteristics (Ta=25 °C) Parameter Symbol Min. Typ. Signal output frequency fc 250 Vertical shift register capacitance *2 CP1V, CP2V 3600 Horizontal shift register capacitance *2 CP1H, CP2H 150 Summing gate capacitance CSG 30 Reset gate capacitance CRG 30 Transfer gate capacitance CTG 75 Charge transfer efficiency *3 CTE 0.99995 0.99999 DC output level *4 Vout 12 17 Output impedance *4 Zo 8 Power consumption *4 *5 P 4 *2: S10140-1108, S10141-1108S *3: Charge transfer efficiency per pixel, measured at half of the full well capacity. *4: The values depend on the load resistance. (Typical, VOD=24 V, Load resistance=100 kΩ) *5: Power consumption of the on-chip amplifier Max. 500 18 Unit kHz pF pF pF pF pF V kΩ mW 2 CCD area image sensor S10140/S10141 series Typ. Fw × S v 75 150 200 5 100 5 4 37500 18500 ±3 200 to 1100 Max. 6 1000 50 18 ±10 0 10 3 0 U nit V ke - s E lectrical and optical characteristics (Ta=25 ° C , unless otherwise noted) Param eter Saturation output voltage Vertical Full well capacity H orizontal Sum m ing C C D node sensitivity D ark current * 6 MPP m ode R eadout noise * 7 25 ° C 0 °C Sym bol Vsat Fw Sv DS Nr Min. 60 120 150 4 - Line binning 30000 Dynamic range *8 DR Area scanning 15000 Photo response non-uniform ity * 9 PR N U λ Spectral response range W hite spots 10 Point defect * Black spots Blem ish C luster defect * 11 C olum n defect * 12 *6: D ark current nearly doubles for every 5 to 7 ° C increase in tem perature. *7: -50 ° C, O perating frequency is 20 kH z. *8: D ynam ic range (DR ) = Full well/Readout noise *9: Measured at the half of the full well capacity output. Photo response non-uniformity (PRNU) [%] Fixed pattern noise (peak to peak) Signal × 100 µV/e e /pixel/ s e rm s % nm - - *10: W hite spots Pixels whose dark current is higher than 1 ke - after one-second integration at 0 ° C . Black spots Pixels whose sensitivity is lower than one-half of the average pixel output. (Measured with uniform light producing one-half of the saturation charge) *11: 2 to 9 contiguous defective pixels *12: 10 or m ore conti g uous defective p ixels s Spectral response (without window) *10 100 90 (Typ. Ta=25 ˚C) BACK-THINNED S10140/S10141 SERIES s Spectral transmittance characteristics 100 90 80 (Typ. Ta=25 ˚C) QUANTUM EFFICIENCY (%) 80 70 60 50 40 30 FRONT-ILLUMINATED (UV COAT) 20 10 0 200 400 FRONT-ILLUMINATED 600 800 TRANSMITTANCE (%) QUARTZ WINDOW 70 60 50 40 30 20 10 AR COATED SAPPHIRE 1000 1200 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 WAVELENGTH (nm) KMPDB0254EA WAVELENGTH (nm) KMPDB0110EA *10: Spectral response with quartz glass or AR-coated sapphire are decreased by the transmittance. q W indow material Type No. S 10140 series W indow material Quartz glass *11 (option: window-less) A R-coated sapphire *12 (option: window-less) AR-coated sapphire *12 (option: window-less) s Dark current vs. temperature 1000 (Typ.) DARK CURRENT (e-/pixel/s) 100 S 10141 series S 10142 series (two-stage TE-cooled types, made to order) *11: Resin sealing *12: Hermetic sealing 10 1 0.1 0.01 -50 -40 -30 -20 -10 0 10 20 30 TEMPERATURE (˚C) KMPDB0255EA 3 CCD area image sensor s Device structure (Conceptual drawing of top view) THINNING S10140/S10141 series 22 23 21 20 15 14 13 2 BEVEL V 1 2 12 11 V=122, 250, 506 H=1024, 2048 3 4 5 8 9 10 4 BLANK 2 n SIGNAL OUT 4 BLANK 6 BEVEL 6 BEVEL 2 n 24 5 4 3 2 12345 H 4 BEVEL SIGNAL OUT THINNING KMPDC0244EA s Timing chart Line bininng INTEGRATION PERIOD (Shutter must be open) Tpwv 1 P1V P2V, TG Tpwh, Tpws P1H P2H, SG Tpwr RG OS D1 D2 S1..S512 D19 D3..D10, S1..S1024, D11..D18 D20 : S1014*-1007/-1008/-1009 : S1014*-1107/-1108/-1109 KMPDC0242EA VERTICAL BINNING PERIOD READOUT PERIOD (Shutter must be closed) (Shutter must be closed) 64← 58 + 6 (BEVEL): S1014*-1007/-1107 63 3.. 62 128← 122 + 6 (BEVEL): S1014*-1008/-1108 3..126 127 256← 250 + 6 (BEVEL): S1014*-1009/-1109 3..254 255 2 Tovr 4..530 531 4..1042 1043 3 532 : S1014*-1007/-1008/-1009 1044: S1014*-1107/-1108/-1109 1 2 Parameter Symbol Pulse width Tpwv P1V, P2V, TG Rise and fall time Tprv, Tpfv Pulse width Tpwh P1H, P2H Rise and fall time Tprh, Tpfh Duty ratio Pulse width Tpws SG Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall time Tprr, Tpfr TG – P1H Overlap time Tovr *13: The clock pulses should be overlapped at 50 % of clock pulse amplitude. Remark *13 *13 - Min. 6 20 1000 10 40 1000 10 40 100 5 1 Typ. 8 2000 50 2000 50 1000 2 Max. 60 60 - Unit µs ns ns ns % ns ns % ns ns µs 4 CCD area image sensor S10140/S10141 series Area scanning INTEGRATION PERIOD (Shutter must be open) Tpwv 1 P1V P2V, TG P1H P2H, SG RG OS Tovr P2V, TG P1H Tpwh, Tpws ENLARGED VIEW 2 READOUT PERIOD (Shutter must be closed) 4.. 63 64← 58 + 6 (BEVEL): S1014*-1007/-1107 4..127 128←122 + 6 (BEVEL): S1014*-1008/-1108 4..255 256←250 + 6 (BEVEL): S1014*-1009/-1109 3 P2H, SG RG OS Tpwr D1 D2 D3 D4 D18 S1..S512 D5..D10, S1..S1024, D11..D17 D19 D20 : S1014*-1007/-1008/-1009 : S1014*-1107/-1108/-1109 KMPDC0243EA Parameter Symbol Pulse width Tpwv P1V, P2V, TG Rise and fall time Tprv, Tpfv Pulse width Tpwh P1H, P2H Rise and fall time Tprh, Tpfh Duty ratio Pulse width Tpws SG Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall time Tprr, Tpfr TG - P1H Overlap time Tovr *14: The clock pulses should be overlapped at 50 % of clock pulse amplitude. Remark * 14 *14 - Min. 6 20 1000 10 40 1000 10 40 100 5 1 Typ. 8 2000 50 2000 50 1000 2 Max. 60 60 - Unit µs ns ns ns % ns ns % ns ns µs 5 CCD area image sensor s Dimensional outlines (unit: mm) S10140-1007/-1008/-1009 WINDOW 16.3 ACTIVE AREA 12.29 S10140/S10141 series S10140-1107/-1108/-1109 WINDOW 28.6 ACTIVE AREA 24.58 22.4 2.54 44.0 22.4 22.9 2.54 34.0 1st PIN INDICATION PAD PHOTOSENSITIVE SURFACE 1st PIN INDICATION PAD PHOTOSENSITIVE SURFACE 3.8 4.4 22.4 22.9 8.2 8.2 a a 3.8 4.4 4.8 3.0 3.0 2.4 (24 ×) 0.5 (24 ×) 0.5 S10140-1007: a=1.464 S10140-1008: a=3.000 S10140-1009: a=6.072 KMPDA0207EA S10140-1107: a=1.464 S10140-1108: a=3.000 S10140-1109: a=6.072 2.4 S10141-1007S/-1008S/-1009S WINDOW 16.3 ACTIVE AREA 12.29 S10141-1107S/-1108S/-1109S WINDOW 28.6 ACTIVE AREA 24.58 22.4 22.9 19.0 4.0 2.54 34.0 42.0 50.0 1st PIN INDICATION PAD PHOTOSENSITIVE SURFACE 6.7 7.3 7.7 2.54 44.0 52.0 60.0 1st PIN INDICATION PAD PHOTOSENSITIVE SURFACE 6.7 7.3 7.7 KMPDA0210EB TE-COOLER 3.0 3.0 1.0 (24 ×) 0.5 (24 ×) 0.5 S10141-1007S: a=1.464 S10141-1008S: a=3.000 S10141-1009S: a=6.072 KMPDA0209EB S10141-1107S: a=1.464 S10141-1108S: a=3.000 S10141-1109S: a=6.072 6 1.0 4.8 TE-COOLER 4.8 4.0 19.0 22.9 8.2 8.2 a a 4.8 KMPDA0208EA CCD area image sensor s P in connections P in N o. S 10140 series S ym bol F unction Reset drain O utput transistor source O utput transistor drain O utput gate Sum m ing gate S ym bol S10140/S10141 series R em ark (s ta n d a rd o p e r a t io n ) +12 V R L =100 k Ω +24 V +3 V S am e pulse as P 2H S 10141 series F unction 1 RD 2 OS 3 OD 4 OG 5 SG 6 7 8 P 2H 9 P 1H 10 I G 2H 11 IG 1H 12 I SH 13 TG * 15 14 P 2V 15 P1V 16 17 18 19 20 SS 21 ISV 22 I G 2V 23 IG 1V 24 RG * 15: Isolation gate P2V. RD Reset drain OS O utput transistor source OD O utput transistor drain OG O utput gate SG Sum m ing gate C CD horizontal register clock-2 P 2H C CD horizontal register clock-2 CCD horizontal register clock-1 P1H CCD horizontal register clock-1 T est point (horizontal input gate-2) I G 2H T est point (horizontal input gate-2) Test point (horizontal input gate-1) IG 1H Test point (horizontal input gate-1) T est point (horizontal input source) I SH T est point (horizontal input source) C onnect to RD S am e pulse as P 2V T ransfer gate TG * 15 T ransfer gate C CD vertical register clock-2 P 2V C CD vertical register clock-2 CCD vertical register clock-1 P1V CCD vertical register clock-1 T h1 T herm istor Th2 Therm istor PT E-coolerP+ TE-cooler+ S ubstrate (G ND) SS S ubstrate (G ND) G ND Test point (vertical input source) ISV Test point (vertical input source) Connect to RD T est point (vertical input gate-2) I G 2V T est point (vertical input gate-2) Test point (vertical input gate-1) IG 1V Test point (vertical input gate-1) R eset gate RG R eset gate between vertical register and horizontal register. In standard operation, TG should be applied the sam e pulse as s S pecifications of built-in T E-cooler (Typ.) S 1 0 1 4 1-1 0 0 7 S /-1 0 0 8 S /-1 0 0 9 S S 1 0 1 4 1 -1 1 0 7 S /-1 1 0 8 S /-1 1 0 9 S P aram eter S ym bol C ondition U nit Ω I nternal resistance Rint Ta=25 ° C 2.5 1.2 M axim um current * 16 I m ax T c * 17 =Th * 18 =25 ° C 1 .5 3 .0 A M axim um voltage Vm ax Tc * 17 =Th * 18 =25 ° C 3.8 3.6 V M axim um heat absorption * 19 Q m ax 3 .4 5 .1 W M axim um tem perature 70 70 °C of heat radiating side * 16: Maxim um current Im ax: If the current greater than this value flows into the therm oelectric cooler, the heat absorption begins to decrease due to the Joule heat. It should be noted that this value is not the dam age threshold value. To protect the therm oelectric cooler and m aintain stable operation, the supply current should be less than 60 % of this m axim um current. *17: Tem perature of the cooling side of therm oelectric cooler. *18: Tem perature of the heat radiating side of therm oelectric cooler. *19: Maxim um heat absorption Q m ax. This is a theoretical heat absorption level that offsets the tem perature difference in the therm oelectric cooler when the m axim um current is supplied to the unit. S10141-1007S/-1008S/-1009S 7 6 5 (Typ. Ta=25 ˚C) VOLTAGE vs. CURRENT CCD TEMPERATURE vs. CURRENT 30 20 S10141-1107S/-1108S/-1109S 7 6 (Typ. Ta=25 ˚C) VOLTAGE vs. CURRENT CCD TEMPERATURE vs. CURRENT 30 20 10 0 -10 -20 -30 -40 CCD TEMPERATURE (˚C) 10 0 -10 -20 -30 -40 2.0 5 4 3 2 1 0 4 3 2 1 0 0 1 2 3 4 0 0.5 1.0 1.5 CURRENT (A) KMPDB0178EA CURRENT (A) KMPDB0179EA CCD TEMPERATURE (˚C) VOLTAGE (V) VOLTAGE (V) 7 CCD area image sensor s Specifications of built-in temperature sensor S10140/S10141 series A chip thermistor is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation between the thermistor resistance and absolute temperature is expressed by the following equation. R1 = R2 × expB (1 / T1 - 1 / T2) where R1 is the resistance at absolute temperature T1 (K) R2 is the resistance at absolute temperature T2 (K) B is so-called the B constant (K) The characteristics of the thermistor used are as follows. R (298K) = 10 kΩ B (298K / 323K) = 3450 K RESISTANCE 1 MΩ 100 kΩ 10 kΩ 220 240 260 280 300 TEMPERATURE (K) KMPDB0111EB s Precaution for use (Electrostatic countermeasures) q Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. q Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. q Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. q Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs. s Element cooling/heating temperature incline rate When cooling the CCD by an externally attached cooler, set the cooler operation so that the temperature gradient (rate of temperature change) for cooling or allowing the CCD to warm back is less than 5 K/minute. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KMPD1094E05 Oct. 2007 DN 8