S10811

CCD area image sensors S10814 S10811 Front-illuminated FFT-CCD for X-ray imaging The S10814 is an FFT-CCD image sensor suitable for intra-oral X-ray imaging in dental diagnosis. The S10814 has about 2 mega (1700 × 1200) pixels, each of which is 20 × 20 μm in size. The FOP (fiber optic plate) used as an input window is as thin as 1.5 mm, making high resolution as well as highly resistant to X-ray irradiation. The scintillator coated on the FOP is optimized to have high X-ray sensitivity and high resolution (20 Lp/mm). The S10811 is an easy-to-use X-ray imaging module using the S10814, with added functions such as a cable assembly and X-ray trigger circuit. Features X-ray monitoring photodiode incorporated Compact size High dynamic range: 12-bit Long-term stability For use under 100000 shots (60 kVp, 30 mR X-ray irradiation) Resolution: 20 Lp/mm 1700 (H) × 1200 (V) pixel format Pixel size: 20 × 20 μm Coupled with FOS for X-ray imaging 100% fill factor Low dark signal Low readout noise MPP operation AC/DC X-ray source adapted Applications Intra-oral X-ray imaging in dental diagnosis General X-ray imaging Non-destructive inspection These products are components for incorporation into medical device. General ratings Parameter CCD structure Fill factor Cooling Number of pixels Number of active pixels Pixel size Active area Vertical clock phase Horizontal clock phase Output circuit Dimensions Reliability Window S10811 Full frame transfer 100 % Non-cooled 1708 (H) × 1202 (V) 1700 (H) × 1200 (V) 20 (H) × 20 (V) μm 34 (H) × 24 (V) mm 2 phases 2 phases Emitter follower without load resistance 37.8 (H) × 26.5 (V) mm 42.3 (H) × 30.0 (V) mm 100000 shots at 60 kVp, 30 mR FOS (scintillator on 1.5 mm FOP) S10814 www.hamamatsu.com 1 CCD area image sensors S10814, S10811 Absolute maximum ratings (Ta=25 °C) Parameter Storage temperature Operating temperature OD voltage RD voltage SG voltage OG voltage RG voltage TG voltage Vertical clock voltage Horizontal clock voltage Vcc voltage Symbol Tstg Topr VOD VRD VSG VOG VRG VTG VP1V, VP2V VP1H, VP2H Vcc Min. -20 0 -0.5 -0.5 -15 -15 -15 -15 -15 -15 0 Typ. Max. +70 +40 +20 +18 +15 +15 +15 +15 +15 +15 +7 Unit °C °C V V V V V V V V V Operating conditions (MPP mode, Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Substrate voltage Vertical shift register clock voltage Horizontal shift register clock voltage Summing gate voltage Reset gate voltage Transfer gate voltage +5 V power supply voltage Symbol VOD VRD VOG Vss VP1VH, VP2VH VP1VL, VP2VL VP1HH, VP2HH VP1HL, VP2HL VsGH VsGL VRGH VRGL VTGH VTGL Vcc Min. 12 12 -0.5 0 -9 0 -9 0 -9 0 -9 0 -9 4.75 Typ. 15 13 2 0 3 -8 3 -8 3 -8 3 -8 3 -8 5 Max. 14 5 6 -7 6 -7 6 -7 6 -7 6 -7 5.25 Unit V V V V V V V V V V V V V V V High Low High Low High Low High Low High Low Electrical characteristics (Ta=25 °C) Parameter Signal output frequency*1 Vertical shift register capacitance S10814 Horizontal shift register capacitance S10811 S10814 Summing gate capacitance S10811 S10814 Reset gate capacitance S10811 S10814 Transfer gate capacitance S10811 Charge transfer efficiency*2 DC output level*3 Output impedance*3 Power dissipation*3 *4 S10814 +5 V power supply current S10811 *1: *2: *3: *4: Symbol fc CP1V, CP2V CP1H, CP2H CSG CRG CTG CTE Vout Zo P Icc Min. 0.99995 5 Typ. 1 70000 400 600 20 220 20 220 250 450 0.99998 8 500 75 1 2 Max. 11 Unit MHz pF pF pF pF pF V Ω mW mA In case of the S10814, maximum frequency strongly depends on a peripheral circuit and cable length. Measured at half of the full well capacity. CTE is defined per pixel. VOD=15 V Power dissipation of the on-chip amplifier 2 CCD area image sensors S10814, S10811 Electrical and optical characteristics (Ta=25 °C, VOD=15 V, unless otherwise noted) Parameter Vertical Horizontal Full well capacity Summing CCD node sensitivity*5 Dark current (MPP mode)*6 Ta=25 °C Readout noise*7 Ta=-40 °C Dynamic range*8 X-ray response non-uniformity*9 *10 White spots Point defects*12 Black spots Blemish*11 Cluster defects*13 Column defects*14 X-ray resolution*9 Symbol Fw Sv DS Nr DR XRNU ΔR Min. 100 1.0 15 Typ. 200 300 600 1.4 250 90 60 3333 ±10 20 Max. 2500 ±30 20 20 3 1 Unit keμV/ee-/pixel/s e- rms % Lp/mm *5: VOD=15 V, RL (load resistance of emitter follower)=1 kΩ *6: Dark signal doubles for every 5 to 7 °C. *7: Operating frequency is 1 MHz. *8: Dynamic range = Full well capacity / Readout noise *9: X-ray irradiation of 60 kVp, measured at half of the full well capacity *10: XRNU (%) = Noise / Signal × 100 Noise: Fixed pattern noise (peak to peak) In the range that excludes 5 pixels from edges to the center at every position *11: Refer to “Characteristics and use of FFT-CCD area image sensor” of technical information. *12: White spots > 10 times of Max. Dark signal (2500 e-/pixel/s) Black spots > 50 % reduction in response relative to adjacent pixels, measured at half of the full well capacity *13: Continuous 2 to 9 point defects 3 CCD area image sensors S10814, S10811 Device structure P2V’ TG’ SS ...... 1696 1697 1698 1699 OS OD S1699 S1700 S1701 S1702 S1703 1700 1 2 3 ...... S1704 D1 D2 D3 VS1 VS2 VS3 VS4 D4 S1 S2 S3 S4 23 S5 S6 RD ...... RG’ OG SG’ P1H’ P2H’ X-ray irradiation monitoring photodiode PD KMPDC0220EA Pixel format Left ← Horizontal direction → Right Blank 2 Optical black 2 Isolation 1 Effective 1700 Isolation 1 Optical black 0 Blank 2 Top ← Vertical direction → Bottom Isolation Effective Isolation 1 1200 1 VS1199 VS1201 P1V’ 1198 1199 1200 VS1200 VS1202 4 CCD area image sensors S10814, S10811 On-board circuit OD 51 k 7.5 k P1V P2V TG P1H P2H SG RG 10 10 10 10 10 10 100 GND OD P1V’ P2V’ TG’ CCD chip P1H’ P2H’ SG’ RG’ SS PD Trigger A (S10814) OS Vcc Trigger B (S10811) 10 k OUT OG RD 2.2 µ RD Molex 52745-1497 Vcc Trigger A SG P2H P1H Reserve RG RD OD OUT GND TG P2V P1V 1 2 3 4 5 6 7 8 9 10 11 12 13 14 KMPDC0350EA 2.2 µ 0.1 µ 5 CCD area image sensors S10814, S10811 Timing chart Pre-integration period AC X-ray exposure (Trigger A)*1 DC X-ray exposure (Trigger A)*1 Trigger B (S10811)*2 P1V P2V, TG*3 P1H P2H, SG RG OUT Tovr P2V, TG P1H P2H, SG RG OUT D1 D2 S2, S3, S4, ... , S1702, S1703, S1704 S1 D3 D4 KMPDC0 KMPDC0351EA Integration period Readout period Tpwv VD1 1 VD: Vertical dummy 2, 3, ... , 1199, 1200, VD2 Tpwh, Tpws Enlarged view Tpwr *1: Trigger A (S10814) is the same as AC/DC X-ray exposure form. *2: Low active trigger pulse *3: TG terminal can be short-circuited to P2V terminal. P1V, P2V, TG P1H, P2H SG RG TG-P1H Parameter Pulse width*15 Rise and fall times Pulse width Rise and fall times*15 Duty ratio Pulse width Rise and fall times Duty ratio Pulse width Rise and fall times Overlap time Symbol tpwv tprv, tpfv tpwh tprh, tpfh tpws tprs, tpfs tpwr tprr, tpfr tovr Min. 30 200 100 5 100 3 10 3 18 Typ. 60 500 50 500 50 50 36 Max. - Unit μs ns ns ns % ns ns % ns ns μs *15: The clock pulses should be overlapped at 50% of maximum amplitude. 6 CCD area image sensors S10814, S10811 Dimensional outlines (unit: mm) S10814 37.8 34 Active area Scintillator FOP Molex 52745-1497 1 → 14 6.55 24 26.5 Connector 2.8 21.7 FOS 1.7 CCD chip 2.0 3.5 2.0 KMPDA0263EA S10811 Entire view MDR connector (3M 10136-3000PE; 36 terminals) Ferrite Cable CCD sensor 2000 Pin no. 1 2 19 20 17 18 35 36 Shroud KMPDA0246EA * The shield of cable and the shroud of MDR connector are short-circuited. Take due care of EMC and ESD when connected to 0 V reference and the ground. 7 CCD area image sensors S10814, S10811 CCD sensor 42.3 3.5 Cable 30.0 5.3 34 Active area KMPDA0247EB Pin connections S10814 Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Symbol Vcc Trigger A SG P2H P1H Reserve RG RD OD OUT GND TG P2V P1V Description Analog power +5 V Trigger A output Summing gate CCD horizontal register clock-2 CCD horizontal register clock-1 Reset gate Reset drain Output transistor drain Signal output Ground Transfer gate CCD vertical register clock-2 CCD vertical register clock-1 Remark 3.0 24 5.8 13.5 Should be opened 8 CCD area image sensors S10814, S10811 S10811 Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Symbol GND Vcc SG Trigger B RG NC Reserve NC RD NC OD NC OUT NC GND NC P1V Reserve Reserve P2H NC P1H NC GND NC RD NC OD NC GND NC OUT NC P2V NC TG Description Ground +5 V power supply Summing gate Trigger B output Reset gate Remark Same timing as P2H Should be opened Reset drain Output transistor drain Sensor output Ground CCD vertical register clock-1 Should be opened Should be opened CCD horizontal register clock-2 CCD horizontal register clock-1 Ground Reset drain Output transistor drain Ground Sensor output CCD vertical register clock-2 Transfer gate Same timing as P2V 9 CCD area image sensors S10814, S10811 Precautions Electrostatic countermeasures Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. · Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. · Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. · Ground the tools used to handle these sensors, such as tweezers and soldering irons. · It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs. Operating environment This product is subject to use in an ordinary room environment such as several thousand lux in the intensity of illumination; excessive illumination during diagnosis with X-ray imaging may cause malfunction. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Type numbers of products listed in the specification sheets or supplied as samples may have a suffix “(X)” which means tentative specifications or a suffix “(Z)” which means developmental specifications. ©2010 Hamamatsu Photonics K.K. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 10 Cat. No. KMPD1124E02 Dec. 2010 DN