S1087-01

PHOTODIODE Si photodiode S1087/S1133 series Ceramic package photodiode with low dark current S1087/S1133 series are ceramic package photodiodes that offer low dark current. Ceramic package used is light-impervious, so no stray light can reach the active area from the side or backside. This allows reliable optical measurements in the visible to near infrared range, over a wide dynamic range from low light levels to high light levels. Features Applications l S1087, S1133 : For visible range S1087-01, S1133-01: For visible to IR range S1133-14 : For visible to near IR range l Exposure meter l Illuminometer l Camera auto exposure l Stroboscope light control l Copier l Display light control l Optical switch s General ratings / Absolute maximum ratings Type No. Dimensional outline/ Window material * Active area size Effective active area Absolute maximum ratings Operating Storage Reverse temperature temperature voltage Topr Tstg VR Max. (V) (°C) (°C) 10 -10 to +60 -20 to +70 (mm) (mm2) S1087 ➀/V 1.3 × 1.3 1.6 S1087-01 ➁/R S1133 ➂/V S1133-01 2.4 × 2.8 6.6 ➃/R S1133-14 * Window material R: resin coating, V: visual-compensation filter s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Spectral Peak response sensitivity range wavelength λ λp (nm) 320 to 730 320 to 1100 320 to 730 320 to 1100 320 to 1000 (nm) 560 960 560 960 720 Type No. Photo sensitivity Rise Short Dark Temp. S time Infrared circuit Temp. current coefficient (A/W) tr sensitivity current coefficient ID of ID VR=0 V Isc of Isc VR=1 V GaP He-Ne ratio TCID λp RL=1 kΩ Max. 100 lx LED laser 560 nm 633 nm 0.3 0.33 0.3 0.33 0.19 0.38 0.19 0.38 0.37 (%) 10 10 (µA) 0.16 1.3 0.65 5.6 3.4 (%/°C) -0.01 0.1 -0.01 0.1 S1087 S1087-01 S1133 S1133-01 S1133-14 0.3 0.58 0.3 0.58 0.4 Terminal Shunt capacitance resistance Ct Rsh VR=0 V VR=10 mV f=10 kHz Min. Typ. (pA) (times/°C) (µs) (pF) (GΩ) (GΩ) 10 20 0.5 1.12 2.5 0.5 200 700 200 10 250 100 50 Si photodiode s Spectral response (Typ. Ta=25 ˚C) S1087/S1133 series s Photo sensitivity temperature characteristic (typical example: S1087) (Typ.) +1.0 0.7 S1087-01 S1133-01 0.6 TEMPERATURE COEFFICIENT (%/˚C) PHOTO SENSITIVITY (A/W) 0.5 +0.5 QE=100 % S1133-14 0.4 0.3 0.2 0.1 0 200 S1087 S1133 0 -0.5 400 600 800 1000 -1.0 200 400 600 800 1000 WAVELENGTH (nm) WAVELENGTH (nm) KSPDB0119EA KSPDB0063EB s Rise time vs. load resistance (Typ. Ta=25 ˚C, VR=0 V) s Dark current vs. reverse voltage 1 nA (Typ. Ta=25 ˚C) 1 ms 100 µs 100 pA RISE TIME S1133/-01 10 µs DARK CURRENT S1133/-01 10 pA S1133-14 1 µs S1087/-01, S1133-14 100 ns 1 pA 100 fA S1087/-01 10 ns 102 103 104 105 10 fA 0.01 0.1 1 10 LOAD RESISTANCE (Ω) REVERSE VOLTAGE (V) KSPDB0120EA KSPDB0121EA Si photodiode s Shunt resistance temperature characteristics 100 TΩ S1087/S1133 series s Short circuit current linearity (Typ. Ta=25 ˚C, “A” light source fully illuminated) (Typ. VR=10 mV) 100 10-2 10 TΩ S1133-01 S1087/-01 OUTPUT CURRENT (A) SHUNT RESISTANCE 10-4 10-6 10-8 10-10 10-12 10-14 10-16 10-8 S1133-14 S1087-01 1 TΩ 100 GΩ S1133/-01 10 GΩ S1133 1 GΩ S1133-14 S1087 10-6 10-4 10-2 100 102 104 106 108 100 MΩ -20 0 20 40 60 70 AMBIENT TEMPERATURE (˚C) INCIDENT LIGHT LEVEL (lx) KSPDB0122EA KSPDB0123EA Si photodiode s Dimensional outlines (unit: mm, tolerance unless otherwise noted: ±0.15) ➀ S1087 CATHODE INDICATOR HOLE ACTIVE AREA 1.3 FILTER PHOTOSENSITIVE SURFACE 6.0 - 0.25 +0 S1087/S1133 series ➁ S1087-01 CATHODE INDICATOR HOLE ACTIVE AREA 1.3 6.0-0.25 +0 5.0 ± 0.2 5.0 ± 0.2 0.1 FILTER 1.5 ± 0.2 PHOTOSENSITIVE SURFACE 0.8 12 ± 1.0 0.45 LEAD 0.45 LEAD 3.0 ± 0.2 3.0 ± 0.2 KSPDA0053EA 12 ± 1.0 0.8 1.5 ± 0.2 KSPDA0052EA ➂ S1133 CATHODE INDICATOR HOLE 8.0 -0.25 ACTIVE AREA 2.8 × 2.4 +0.1 +0 ➃ S1133-01/-14 CATHODE INDICATOR HOLE 8.0 +0 - 0.25 ACTIVE AREA 2.8 × 2.4 FILTER 1.5 ± 0.2 PHOTOSENSITIVE SURFACE 1.5 ± 0.2 5.0 ± 0.2 9 ± 1.0 S1133-01 S1133-14 a KSPDA0055EA PHOTOSENSITIVE SURFACE 0.2 FILTER 0.7 6.0 -0.3 9 ± 1.0 0.45 LEAD 5.0 ± 0.2 0.45 LEAD a 6.0+0.1 - 0.3 0.7 0.6 KSPDA0054EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KSPD1039E01 Apr. 2001 DN