S11499-01

IR-enhanced Si PIN photodiodes S11499 series Large area, enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499 series has much higher sensitivity to YAG laser light (1.06 μm). It also offers improved temperature characteristics of sensitivity at wavelengths longer than 950 nm. Features High sensitivity: 0.6 A/W (λ=1060 nm) Large active area: φ5.0 mm (S11499-01) High reliability package: TO-5/TO-8 metal package Applications YAG laser monitor General ratings Parameter Package Active area S11499 TO-5 φ3.0 S11499-01 TO-8 φ5.0 Unit mm Absolute maximum ratings Parameter Reverse voltage Operating temperature Storage temperature Symbol Condition VR max. Ta=25 °C Topr Tstg S11499 30 -40 to +100 -55 to +125 S11499-01 Unit V °C °C Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Short circuit current Dark current Cut-off frequency Terminal capacitance Symbol λ λp S Isc ID fc Ct Condition Min. 0.54 6.0 S11499 Typ. 360 to 1140 1000 0.6 7.8 0.05 30 13 Max. 5 Min. 0.54 15 S11499-01 Typ. 360 to 1140 1000 0.6 21 0.1 15 33 Max. 10 Unit nm nm A/W μA nA MHz pF λ=1060 nm 100 lx VR=20 V VR=20 V, -3 dB VR=20 V, f=1 MHz www.hamamatsu.com 1 Si PIN photodiodes S11499 series Spectral response 0.8 (Typ. Ta=25 °C) Photo sensitivity temperature characteristic 1.5 (Typ.) QE=100% Temperature coefficient (%/°C) 1.0 Conventional type 0.5 Photo sensitivity (A/W) 0.6 0.4 0 S11499 series -0.5 0.2 Conventional type S11499 series 0 200 400 600 800 1000 1200 -1.0 600 700 800 900 1000 1100 Wavelength (nm) KPINB0368EA Wavelength (nm) KPINB0369EA Dark current vs. reverse voltage 10 nA (Typ. Ta=25 °C) Terminal capacitance vs. reverse voltage 1 nF (Typ. Ta=25 °C, f=1 MHz) Terminal capacitance 1 nA S11499-01 100 pF Dark current S11499-01 100 pA S11499 10 pF S11499 10 pA 1 pA 0.01 0.1 1 10 100 1 pF 0.1 1 10 100 Reverse voltage (V) KPINB0370EA Reverse voltage (V) KPINB0371EA 2 Si PIN photodiodes S11499 series Dimensional outlines (unit: mm) S11499 Window 5.9 ± 0.1 9.1 ± 0.2 4.2 ± 0.2 8.1 ± 0.1 Window 10.5 ± 0.1 S11499-01 13.9 ± 0.2 5.0 ± 0.2 0.5 max. 7.5 ± 0.2 Case The glass window may extend a maximum of 0.3 mm above the upper surface of the cap. KPINA0027EC 12.35 ± 0.1 Photosensitive surface 0.45 Lead (2.5) 0.4 max. Photosensitive surface (20) 0.45 Lead (2.7) Index mark 1.4 5.08 ± 0.25 1.5 max. 1.0 max. Case The glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KPINA0024EB Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Type numbers of products listed in the specification sheets or supplied as samples may have a suffix “(X)” which means tentative specifications or a suffix “(Z)” which means developmental specifications. ©2010 Hamamatsu Photonics K.K. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 (15) Cat. No. KPIN1082E01 Mar. 2010 DN 3