S11510_10

IR-enhanced CCD image sensors S11510 series Enhanced near infrared sensitivity: QE=40% (λ=1000 nm) The S11510 series is a family of FFT-CCD image sensors for photometric applications that offer improved sensitivity in the near infrared region at wavelengths longer than 800 nm. Our unique technology in laser processing was used to form a MEMS structure on the back side of the CCD. This allows the S11510 series to have much higher sensitivity than our previous products (S10420-01 series). In addition to having high infrared sensitivity, the S11510 series can be used as an image sensor with a long active area in the direction of the sensor height by binning operation, making it suitable for detectors in Raman spectroscopy. Binning operation also ensures even higher S/N and signal processing speed compared to methods that use an external circuit to add signals digitally. The S11510 series has a pixel size of 14 × 14 μm and is available in two image areas of 14.336 (H) × 0.896 (V) mm (1024 × 64 pixels) and 28.672 (H) × 0.896 (V) mm (2048 × 64 pixels). The S11510 series is pin compatible with the S10420-01 series, and so operates under the same drive conditions. Features Enhanced near infrared sensitivity: QE=40% (λ=1000 nm) High CCD node sensitivity: 6.5 μV/eHigh full well capacity and wide dynamic range (with anti-blooming function) Pixel size: 14 × 14 μm MPP operation Applications Raman spectrometers, etc. Spectral response (without window)*1 100 90 80 (Typ. Ta=25 °C) S11510 series Quantum efficiency (%) 70 60 50 40 30 20 10 0 200 400 Front-illuminated CCD 600 800 1000 1200 Conventional type (S10420-01 series) Wavelength (nm) KMPDB0324EC *1: Spectral response with quartz glass is decreased according to the spectral transmittance characteristic of window material. www.hamamatsu.com 1 CCD image sensors S11510 series Selection guide Type no. S11510-1006 S11510-1106 Number of total pixels 1044 × 70 2068 × 70 Number of active pixels 1024 × 64 2048 × 64 Active area [mm (H) × mm (V)] 14.336 × 0.896 28.672 × 0.896 Readout speed max. (MHz) 0.5 Applicable driver circuit C11287 General ratings Parameter Pixel size Vertical clock phase Horizontal clock phase Output circuit Package Window Specification 14 (H) × 14 (V) μm 2-phase 4-phase One-stage MOSFET source follower 24-pin ceramic DIP (refer to dimensional outline) Quartz glass Absolute maximum ratings (Ta=25 °C) Parameter Operating temperature*2 Storage temperature Output transistor drain voltage Reset drain voltage Over flow drain voltage Vertical input source voltage Horizontal input source voltage Over flow gate voltage Vertical input gate voltage Horizontal input gate voltage Summing gate voltage Output gate voltage Reset gate voltage Transfer gate voltage Vertical shift register clock voltage Horizontal shift register clock voltage *2: Package temperature Symbol Topr Tstg VOD VRD VOFD VISV VISH VOFG VIG1V, VIG2V VIG1H, VIG2H VSG VOG VRG VTG VP1V, VP2V VP1H, VP2H VP3H, VP4H Min. -50 -50 -0.5 -0.5 -0.5 -0.5 -0.5 -10 -10 -10 -10 -10 -10 -10 -10 -10 Typ. Max. +50 +70 +30 +18 +18 +18 +18 +15 +15 +15 +15 +15 +15 +15 +15 +15 Unit °C °C V V V V V V V V V V V V V V 2 CCD image sensors S11510 series Operating conditions (MPP mode, Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Over flow drain voltage Over flow gate voltage Output gate voltage Substrate voltage Input source Vertical input gate Test point Horizontal input gate Vertical shift register clock voltage High Low High Horizontal shift register clock voltage Low Summing gate voltage Reset gate voltage Transfer gate voltage External load resistance High Low High Low High Low Symbol VOD VRD VOFD VOFG VOG VSS VISV, VISH VIG1V, VIG2V VIG1H, VIG2H VP1VH, VP2VH VP1VL, VP2VL VP1HH, VP2HH VP3HH, VP4HH VP1HL, VP2HL VP3HL, VP4HL VSGH VSGL VRGH VRGL VTGH VTGL RL Min. 23 11 11 0 4 -9 -9 4 -9 4 -6 4 -6 4 -6 4 -9 90 Typ. 24 12 12 12 5 0 VRD -8 -8 6 -8 6 -5 6 -5 6 -5 6 -8 100 Max. 25 13 13 13 6 8 -7 8 V -4 8 -4 8 -4 8 -7 110 V V V kΩ Unit V V V V V V V V V V Electrical characteristics (Ta=25 °C) Parameter Signal output frequency -1006 Vertical shift register capacitance -1106 -1006 Horizontal shift register capacitance -1106 Summing gate capacitance Reset gate capacitance -1006 Transfer gate capacitance -1106 Charge transfer efficiency*3 DC output level Output impedance Power consumption*4 Symbol fc CP1V, CP2V CP1H, CP2H CP3H, CP4H CSG CRG CTG CTE Vout Zo P Min. 0.99995 17 Typ. 0.25 600 1200 80 160 10 10 30 60 0.99999 18 10 4 Max. 0.5 19 Unit MHz pF pF pF pF pF V kΩ mW *3: Charge transfer efficiency per pixel, measured at half of the full well capacity *4: Power consumption of the on-chip amplifier plus load resistance 3 CCD image sensors S11510 series Electrical and optical characteristics (Ta=25 °C, unless otherwise noted) Parameter Saturation output voltage Vertical Full well capacity Horizontal CCD node sensitivity Dark current*5 Readout noise*6 Dynamic range*7 Line binning Spectral response range Photo response non-uniformity*8 *5: *6: *7: *8: Symbol Vsat Fw Sv DS Nr DR λ PRNU Min. 50 250 5.5 41700 Typ. Fw × Sv 60 300 6.5 50 6 50000 200 to 1100 ±3 Max. 7.5 200 15 ±10 Unit V keμV/ee-/pixel/s e- rms nm % Dark current nearly doubles for every 5 to 7 °C increase in temperature. Temperature: -40 °C, readout frequency: 20 kHz Dynamic range (DR) = Full well capacity / Readout noise Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 660 nm) Fixed pattern noise (peak to peak) Photo response non-uniformity = × 100 [%] Signal Dark current vs. temperature 100 (Typ.) Spectral transmittance characteristic of window material 100 90 80 (Typ. Ta=25 °C) Dark current (e-/pixel/s) 10 Transmittance (%) 70 60 50 40 30 20 10 1 0.1 0.01 -50 -40 -30 -20 -10 0 10 20 30 0 100 200 300 400 500 600 700 800 900 100011001200 Temperature (°C) KMPDB0304EA Wavelength (nm) KMPDB0303EA Window material Type no. S11510 series *9: Resin sealing Window material Quartz glass*9 4 CCD image sensors S11510 series Device structure (conceptual drawing of top view in dimensional outline) Thinning 23 22 21 20 19 18 17 16 15 5 4 3 2 12345 14 1024 24 13 2n signal output 4-bevel V=64 H=1024, 2048 64 Thinning 1 2 3 4 5 6 n 7 8 9 10 11 12 4 blank pixels 6-bevel 2 signal output 4 blank pixels 6-bevel KMPDC0365EA 2-bevel 5 CCD image sensors S11510 series Timing chart (line binning) Integration time (shutter has to be open) Tpwv P1V P2V, TG Tpwh, Tpws Tovrh P1H P2H P3H P4H, SG Tpwr RG OS 1 2 3 4...1043 1044: S11510-1006 4...2067 2068: S11510-1106 1 2 Vertical binning period (shutter has to be closed) 3...69 70←64 + 6 (bevel) Tovr Readout period (shutter has to be closed) D1 D2 D19 D20 D3...D10, S1...S1024, D11...D20: S11510-1006 S1...S2048 : S11510-1106 KMPDC0355EA Parameter Pulse width*10 P1V, P2V, TG Rise and fall time*10 Pulse width*10 Rise and fall time*10 P1H, P2H, P3H, P4H Pulse overlap time Duty ratio*10 Pulse width*10 Rise and fall time*10 SG Pulse overlap time Duty ratio*10 Pulse width RG Rise and fall time TG-P1H Overlap time Symbol Tpwv Tprv, Tpfv Tpwh Tprh, Tpfh Tovrh Tpws Tprs, Tpfs Tovrh Tpwr Tprr, Tpfr Tovr Min. 6 20 1000 10 500 40 1000 10 500 40 100 5 1 Typ. 8 2000 1000 50 2000 1000 50 1000 2 Max. 60 60 - Unit μs ns ns ns ns % ns ns ns % ns ns μs *10: Symmetrical clock pulses should be overlapped at 50% of maximum amplitude. 6 CCD image sensors S11510 series Dimensional outline (unit: mm) A 24 13 10.41 ± 0.25 10.03 ± 0.3 3.3 ± 0.35 B Index mark 27.94 ± 0.3 38.10 ± 0.4 1.27 ± 0.25 Index mark Photosensitive surface 0.25-0.03 +0.05 1 12 1.47 Type no. A Active area B 0.896 (V) 0.896 (V) 1.72 ± 0.17 3.0 ± 0.5 S11510-1006 14.336 (H) S11510-1106 28.672 (H) 0.46 ± 0.05 1.27 ± 0.2 2.54 ± 0.13 KMPDA0265EA Pin connections Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Symbol OS OD OG SG SS RD P4H P3H P2H P1H IG2H IG1H OFG OFD ISH ISV SS RD IG2V IG1V P2V P1V TG RG Function Output transistor source Output transistor drain Output gate Summing gate Substrate Reset drain CCD horizontal register clock-4 CCD horizontal register clock-3 CCD horizontal register clock-2 CCD horizontal register clock-1 Test point (horizontal input gate-2) Test point (horizontal input gate-1) Over flow gate Over flow drain Test point (horizontal input source) Test point (vertical input source) Substrate Reset drain Test point (vertical input gate-2) Test point (vertical input gate-1) CCD vertical register clock-2 CCD vertical register clock-1 Transfer gate Reset gate Remark (standard operation) RL=100 kΩ +24 V +5 V Same pulse as P4H GND +12 V -8 V -8 V +12 V +12 V Connect to RD Connect to RD GND +12 V -8 V -8 V Same pulse as P2V 7 CCD image sensors S11510 series Precaution for use (electrostatic countermeasures) When handling CCD sensors, always wear a wrist strap and also anti-static clothing, gloves, and shoes, etc. The wrist strap should have a protective resistor (about 1 MΩ) on the side closer to the body and be grounded properly. Using a wrist strap having no protective resistor is hazardous because you may receive an electrical shock if electric leakage occurs. Avoid directly placing these sensors on a work bench that may carry an electrostatic charge. Provide ground lines with the work bench and work floor to allow static electricity to discharge. Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs. Driver circuit for CCD image sensor (S11510 series) C11287 [sold separately] The C11287 is a driver circuit designed for HAMAMATSU CCD image sensors S11510 series. The C11287 can be used in spectrometers, etc. when combined with the CCD image sensor. Features Built-in 14-bit A/D converter Interface to computer: USB 2.0 Power supply: USB bus power operation Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Type numbers of products listed in the specification sheets or supplied as samples may have a suffix “(X)” which means tentative specifications or a suffix “(Z)” which means developmental specifications. ©2010 Hamamatsu Photonics K.K. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KMPD1126E03 Aug. 2010 DN 8