S1226-18BQ

PHOTODIODE Si photodiode S1226 series For UV to visible, precision photometry; suppressed IR sensitivity Features Applications l High UV sensitivity: QE 75 % (λ=200 nm) l Suppressed IR sensitivity l Low dark current l High reliability l Analytical equipment l Optical measurement equipment, etc. s General ratings / absolute maximum ratings Type No. Dimensional outline/ Window material * ➀/Q ➀/K ➁/Q ➁/K ➁/Q ➁/K ➂/Q ➂/K Package (mm) TO-18 Active area size (mm) 1.1 × 1.1 2.4 × 2.4 TO-5 3.6 × 3.6 TO-8 5.8 × 5.8 13 33 Effective active area (mm2) 1.2 5.7 Absolute maximum ratings Operating Storage Reverse temperature temperature voltage Topr Tstg VR Max. (V) (°C) (°C) -20 to +60 -55 to +80 -40 to +100 -55 to +125 -20 to +60 -55 to +80 -40 to +100 -55 to +125 5 -20 to +60 -55 to +80 -40 to +100 -55 to +125 -20 to +60 -55 to +80 -40 to +100 -55 to +125 S1226-18BQ S1226-18BK S1226-5BQ S1226-5BK S1226-44BQ S1226-44BK S1226-8BQ S1226-8BK s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Spectral response range λ Peak sensitivity wavelength λp Photo sensitivity S (A/W) λp 200 nm Short circuit Dark current current Isc ID 100 lx V =10 m V R He-Ne Min. Typ. Max. laser (µA) (µA) 0.5 2.2 4.4 12 0.66 2.9 5.9 16 (pA) 2 5 1.12 10 20 1 2 380 950 1 10 3.6 × 10-15 Terminal Temp. Rise time capaci- Shunt coeffitr tance resistance cient NEP VR=0 V Ct Rsh of ID V R =10 mV RL=1 kΩ VR=0 V TCID f=10 kHz Min. Typ. (times/° C) (µs) (pF) (GΩ ) (GΩ ) (W/Hz1/2) 0.15 0.5 35 160 5 2 50 1.6 × 10-15 20 2.5 × 10-15 Type No. Min. Typ. 633 nm (nm) (nm) 190 to 1000 S1226-18BQ 0.10 0.12 320 to 1000 S1226-18BK 190 to 1000 S1226-5BQ 0.10 0.12 320 to 1000 S1226-5BK 190 to 1000 720 0.36 0.10 0.12 0.34 S1226-44BQ 320 to 1000 S1226-44BK 190 to 1000 S1226-8BQ 0.10 0.12 320 to 1000 S1226-8BK * Window material, K: borosilicate glass, Q: quartz glass 0.5 5 5.0 × 10-15 1 Si photodiode s Spectral response 0.7 0.6 (Typ. Ta =25 ˚C) S1226 series (Typ. ) s Photo sensitivity temperature characteristic +1.5 TEMPERATURE COEFFICIENT (%/˚C) PHOTO SENSITIVITY (A/W) 0.5 0.4 +1.0 +0.5 0.3 0.2 S1226-BQ 0 0.1 S1226-BK 0 190 400 600 800 1000 -0.5 190 400 600 800 1000 WAVELENGTH (nm) KSPDB0106EA WAVELENGTH (nm) KSPDB0030EA s Rise time vs. load resistance 1 ms (Typ. Ta=25 ˚C, VR=0 V) s Dark current vs. reverse voltage 1 nA (Typ. Ta=25 ˚C) 100 µs S1226-8BQ/BK S1226-44BQ/BK 100 pA RISE TIME 10 µs DARK CURRENT S1226-44BQ/BK 10 pA S1226-8BQ/BK 1 µs S1226-18BQ/BK 100 ns S1226-5BQ/BK 10 ns 102 103 104 105 1 pA S1226-5BQ/BK S1226-18BQ/BK 100 fA 0.01 0.1 1 10 LOAD RESISTANCE (Ω) KSPDB0107EA DARK CURRENT KSPDB0108EB s Shunt resistance vs. ambient temperature 1 TΩ 100 GΩ (Typ. VR=10 mV) S1226-18BQ/BK, -5BQ/BK SHUNT RESISTANCE 10 GΩ 1 GΩ S1226-44BQ/BK 100 MΩ 10 MΩ 1 MΩ 100 kΩ 10 kΩ -20 S1226-8BQ/BK 0 20 40 60 80 AMBIENT TEMPERATURE (˚C) KSPDB0109EA 2 Si photodiode s Dimensional outlines (unit: mm) ➀ S1226-18BQ/-18BK 5.4 ± 0.2 WINDOW 3.0 ± 0.2 S1226 series ➁ S1226-5BQ/K, S1226-44BQ/K 9.1 ± 0.2 WINDOW 5.9 ± 0.1 3.6 ± 0.2 PHOTOSENSITIVE SURFACE 0.45 LEAD PHOTOSENSITIVE SURFACE 0.45 LEAD 2.4 2.9 5.08 ± 0.2 The K type borosilicate glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KSPDA0114EA 2.54 ± 0.2 14 CONNECTED TO CASE CONNECTED TO CASE KSPDA0113EB ➂ S1226-8BQ/-8BK 13.9 ± 0.2 WINDOW 10.5 ± 0.1 12.35 ± 0.1 PHOTOSENSITIVE SURFACE 0.45 LEAD 1.9 7.5 ± 0.2 MARK ( 1.4) CONNECTED TO CASE The K type borosilicate glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KSPDA0115EA 15 5.0 ± 0.2 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 20 4.1 ± 0.2 4.7 ± 0.1 8.1 ± 0.1 Cat. No. KSPD1034E04 Aug. 2004 DN 3