S1227-1010BR

PHOTODIODE Si photodiode S1227 series For UV to visible, precision photometry; suppressed IR sensitivity Features Applications l High UV sensitivity: QE 75 % (λ=200 nm) l Suppressed IR sensitivity l Low dark current l Analytical equipment l Optical measurement equipment, etc. s General ratings / Absolute maximum ratings Type No. Dimensional outline/ Window material * ➀/Q ➁/R ➂/Q ➃/R ➄/Q ➅/R ➆/Q ➇/R Package (mm) 2.7 × 15 6 × 7.6 8.9 × 10.1 15 × 16.5 Active area size (mm) 1.1 × 5.9 2.4 × 2.4 5.8 × 5.8 10 × 10 Effective active area (mm2) 5.9 5.7 5 33 100 -20 to +60 -20 to +80 Absolute maximum ratings Operating Storage Reverse temperature temperature voltage Topr Tstg VR Max. (V) (°C) (°C) S1227-16BQ S1227-16BR S1227-33BQ S1227-33BR S1227-66BQ S1227-66BR S1227-1010BQ S1227-1010BR s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Spectral Peak response sensitivity range wavelength λp λ Photo sensitivity S (A/W) λp 200 nm Short circuit Rise Terminal Shunt Dark current current Temp. time capacitance resistance Isc coefficient tr Ct ID Rsh 100 lx V R =10 m V TCID VR=0 V VR=0 V V R =10 mV He-Ne RL=1 kΩ f=10 kHz (GΩ) Min. Typ. Max. Laser (pF) Min. Typ. 633 nm (µA) (µA) (pA) (times/° C) (µs) 0.34 2 3.2 5 0.5 170 2 20 0.39 2.2 3.7 0.34 2 3.0 5 0.5 160 2 20 0.39 2.2 3.7 1.12 0.34 11 16 20 2 950 0.5 5 0.39 13 19 0.34 32 44 50 7 3000 0.2 2 0.39 36 53 Type No. NEP (nm) (nm) Min. Typ. 190 to 1000 S1227-16BQ 0.36 0.10 0.12 320 to 1000 S1227-16BR 0.43 190 to 1000 S1227-33BQ 0.36 0.10 0.12 320 to 1000 S1227-33BR 0.43 190 to 1000 720 0.36 0.10 0.12 S1227-66BQ 320 to 1000 S1227-66BR 0.43 S1227-1010BQ 190 to 1000 0.36 0.10 0.12 S1227-1010BR 320 to 1000 0.43 * Window material Q: quartz glass, R: resin coating (W/Hz1/2) 2.5 × 10-15 2.1 × 10-15 2.5 × 10-15 2.1 × 10-15 5.0 × 10-15 4.2 × 10-15 8.0 × 10-15 6.7 × 10-15 1 Si photodiode s Spectral response 0.7 0.6 (Typ. Ta=25 ˚C) S1227 series (Typ. ) s Photo sensitivity temperature characteristic +1.5 TEMPERATURE COEFFICIENT (%/˚C) PHOTO SENSITIVITY (A/W) 0.5 0.4 S1227-BR +1.0 +0.5 0.3 0.2 S1227-BQ S1227-BQ 0 0.1 S1227-BR 0 190 400 600 800 1000 -0.5 190 400 600 800 1000 WAVELENGTH (nm) KSPDB0094EA WAVELENGTH (nm) KSPDB0030EB s Rise time vs. load resistance 1 ms (Typ. Ta=25 ˚C, VR=0 V) S1227-1010BQ/BR 100 µs s Dark current vs. reverse voltage 1 nA (Typ. Ta=25 ˚C) S1227-66BQ/BR 100 pA S1227-1010BQ/BR RISE TIME 10 µs DARK CURRENT S1227-66BQ/BR 10 pA 1 µs 1 pA 100 ns S1227-16BQ/BR, -33BQ/BR 10 ns 102 103 104 105 S1227-33BQ/BR S1227-16BQ/BR 100 fA 0.01 0.1 1 10 LOAD RESISTANCE (Ω) KSPDB0095EA REVERSE VOLTAGE (V) KSPDB0096EB s Shunt resistance vs. ambient temperature 1 TΩ 100 GΩ (Typ. VR=10 mV) S1227-33BQ/BR SHUNT RESISTANCE 10 GΩ 1 GΩ S1227-1010BQ/BR S1227-16BQ/BR 100 MΩ 10 MΩ 1 MΩ 100 kΩ 10 kΩ -20 S1227-66BQ/BR 0 20 40 60 80 AMBIENT TEMPERATURE (˚C) KSPDB0097EA 2 Si photodiode s Dimensional outlines (unit: mm) ➀ S1227-16BQ 2.7 ± 0.1 HOLE (2 ×) 0.8 S1227 series ➁ S1227-16BR HOLE (2 ×) 0.8 ACTIVE AREA 15 ± 0.15 ACTIVE AREA 15 ± 0.15 13.5 ± 0.13 0.85 0.5 0.35 12.2 1.5 ± 0.1 PHOTOSENSITIVE SURFACE 13.5 ± 0.13 PHOTOSENSITIVE SURFACE 6.2 0.5 LEAD ANODE MARK 8.5 ± 0.2 0.5 LEAD ANODE MARK 8.5 ± 0.2 Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0094EA 6.2 1.5 ± 0.1 2.7 ± 0.1 KSPDA0095EA ➂ S1227-33BQ 7.6 ± 0.1 ACTIVE AREA ➃ S1227-33BR 7.6 ± 0.1 6.0 ± 0.1 ACTIVE AREA 2.0 ± 0.1 PHOTOSENSITIVE SURFACE 0.75 0.35 0.1 PHOTOSENSITIVE SURFACE 0.35 0.65 0.5 LEAD 10.5 0.5 LEAD 6.6 ± 0.3 5.0 ± 0.3 4.5 ± 0.2 ANODE TERMINAL MARK 4.5 ± 0.2 5.0 ± 0.3 6.6 ± 0.3 ANODE TERMINAL MARK 10.5 2.0 ± 0.1 6.0 ± 0.1 Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0096EA KSPDA0097EA 3 Si photodiode ➄ S1227-66BQ 10.1 ± 0.1 ACTIVE AREA S1227 series ➅ S1227-66BR 10.1 ± 0.1 8.9 ± 0.1 0.75 0.1 0.3 0.3 0.65 PHOTOSENSITIVE SURFACE 2.0 ± 0.1 PHOTOSENSITIVE SURFACE 10.5 0.5 LEAD 0.5 LEAD 9.2 ± 0.3 9.2 ± 0.3 7.4 ± 0.2 ANODE TERMINAL MARK ANODE TERMINAL MARK 7.4 ± 0.2 8.0 ± 0.3 8.0 ± 0.3 10.5 2.0 ± 0.1 8.9 ± 0.1 ACTIVE AREA Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0098EA KSPDA0099EA ➆ S1227-1010BQ 16.5 ± 0.2 ➇ S1227-1010BR 16.5 ± 0.2 ACTIVE AREA 0.9 0.3 0.1 PHOTOSENSITIVE SURFACE 0.3 0.8 0.5 LEAD 15.1 ± 0.3 12.5 ± 0.2 15.1 ± 0.3 12.5 ± 0.2 13.7 ± 0.3 ANODE TERMINAL MARK ANODE TERMINAL MARK 13.7 ± 0.3 10.5 0.5 LEAD 10.5 2.15 ± 0.1 PHOTOSENSITIVE SURFACE 2.15 ± 0.1 15.0 ± 0.15 ACTIVE AREA 15.0 ± 0.15 Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0100EA KSPDA0101EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4 Cat. No. KSPD1036E04 Aug. 2004 DN