S2386-8K

PHOTODIODE Si photodiode S2386 series For visible to IR, general-purpose photometry Features Applications l High sensitivity l Low dark current l High reliability l High linearity l Analytical equipment l Optical measurement equipment s General ratings / Absolute maximum ratings Type No. Dimensional outline/ Window material * ➀/K ➁/L ➂/K ➃/K ➄/K Package (mm) TO-18 TO-5 TO-8 Active area size (mm) 1.1 × 1.1 2.4 × 2.4 3.6 × 3.6 3.9 × 4.6 5.8 × 5.8 Effective active area (mm2) 1.2 5.7 13 17.9 33 30 -40 to +100 -55 to +125 Absolute maximum ratings Operating Storage Reverse temperature temperature voltage Topr Tstg VR Max. (V) (°C) (°C) S2386-18K S2386-18L S2386-5K S2386-44K S2386-45K S2386-8K s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Terminal Dark Short circuit Temp. Rise time capacitance Shunt current coefficient resistance tr current Ct ID of ID VR=0 V Rsh Isc V R =10 m V VR=0 V V R =10 mV Type No. 100 lx TCID RL=1 kΩ H e- N e GaAs Max. f=10 kHz GaP Min. Typ. λp LED laser LE D Min. Typ. 560 nm 633 nm 930 nm (µA) (µA) (pA) (times/° C) (µs) (nm) (nm) (pF) (GΩ ) (GΩ ) S2386-18K 1 1.3 2 0.4 140 5 100 S2386-18L 4 5.7 S2386-5K 4.4 6.0 5 1.8 730 2 50 320 to 1100 960 0.6 0.38 0.43 0.59 1.12 S2386-44K 9.6 12 20 3.6 1600 0.5 25 S2386-45K 12 17 30 5.5 2300 0.3 S2386-8K 26 33 50 10 4300 0.2 10 * Window material K: borosilicate glass, L: lens type borosilicate glass Spectral Peak response sensitivity range wavelength λ λp Photo sensitivity S (A/W) NEP VR=0 V λ=λp (W/Hz1/2) 6.8 × 10-16 9.6 × 10-16 1.4 × 10-15 2.1 × 10-15 1 Si photodiode s Spectral response (Typ. Ta=25 ˚C) +1.5 S2386 series s Photo sensitivity temperature characteristic (Typ.) 0.7 0.6 TEMPERATURE COEFFICIENT (%/˚C) PHOTO SENSITIVITY (A/W) 0.5 0.4 0.3 0.2 +1.0 +0.5 0 0.1 0 200 400 600 800 1000 -0.5 200 400 600 800 1000 WAVELENGTH (nm) WAVELENGTH (nm) KSPDB0110EA KSPDB0058EB s Directivity 20˚ 30˚ 10˚ 0˚ 100 % 10˚ 20˚ 30˚ s Rise time vs. load resistance (Typ. Ta=25 ˚C, VR=0 V) 1 ms 80 % 40˚ 60 % 40˚ 100 µs S2386-8K S2386-45K RISE TIME S2386-18L 10 µs 50˚ 40 % 60˚ 70˚ S2386-18K 80˚ 90˚ 20% 50˚ 60˚ 70˚ 80˚ 90˚ S2386-18K 1 µs S2386-5K 100 ns S2386-44K 10 ns 102 103 104 105 RELATIVE SENSITIVITY LOAD RESISTANCE (Ω) KSPDB0111EA KSPDB0112EA 2 Si photodiode s Dark current vs. reverse voltage (Typ. Ta=25 ˚C) S2386 series s Shunt resistance vs. ambient temperature (Typ. VR=10 mV) S2386-5K 1 TΩ S2386-18K/-18L S2386-45K 1 nA 10 TΩ 100 pA S2386-8K SHUNT RESISTANCE 100 GΩ 10 GΩ S2386-44K 1 GΩ 100 MΩ 10 MΩ 1 MΩ DARK CURRENT 10 pA 1 pA 100 fA S2386-18K/-5K/-44K/-45K 10 fA 0.01 0.1 1 10 100 100 kΩ -20 0 20 40 60 80 REVERSE VOLTAGE (V) AMBIENT TEMPERATURE (˚C) KSPDB0113EB KSPDB0114EA s Dimensional outlines (unit: mm) ➀ S2386-18K WINDOW 3.0 ± 0.2 5.4 ± 0.2 ➁ S2386-18L 2.05 ± 0.3 3.6 ± 0.2 14 5.4 ± 0.2 3.6 ± 0.2 4.7 ± 0.1 4.7 ± 0.1 0.45 LEAD 2.3 0.45 LEAD 2.54 ± 0.2 14 2.3 2.54 ± 0.2 CONNECTED TO CASE CONNECTED TO CASE KSPDA0102EB KSPDA0048EBy 3 Si photodiode ➂ S2386-5K/-44K 9.1 ± 0.2 4.1 ± 0.2 S2386 series ➃ S2386-45K 9.1 ± 0.2 8.1 ± 0.1 WINDOW 5.9 ± 0.1 Y WINDOW 5.9 ± 0.1 8.1 ± 0.1 PHOTOSENSITIVE SURFACE 0.45 LEAD 2.8 X 20 ACTIVE AREA 4.1 ± 0.2 2.8 0.4 5.08 ± 0.2 PHOTOSENSITIVE SURFACE 0.45 LEAD CONNECTED TO CASE The K type borosilicate glass window may extend a maximum of 0.2 mm above the upper surface of the cap. 5.08 ± 0.2 KSPDA0103EA CHIP CENTER TO CAP CENTER -0.7≤X≤-0.1 -0.3≤Y≤+0.3 CONNECTED TO CASE The K type borosilicate glass window may extend a maximum of 0.2 mm above the upper surface of the cap. ➄ S2386-8K 13.9 ± 0.2 5.0 ± 0.2 KSPDA0178EA WINDOW 10.5 ± 0.1 12.35 ± 0.1 PHOTOSENSITIVE SURFACE 0.45 LEAD 1.8 7.5 ± 0.2 MARK ( 1.4) CONNECTED TO CASE The K type borosilicate glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KSPDA0104EA HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 15 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. 20 4 Cat. No. KSPD1035E03 Aug. 2006 DN