S2387-130R

PHOTODIODE Si photodiode S2387 series For visible to IR, general-purpose photometry Features Applications l High sensitivity l Low dark current l High linearity l Analytical equipment l Optical measurement equipment, etc. s General ratings / Absolute maximum ratings Type No. Dimensional outline/ Window material * ➀/R ➁/R ➂/R ➃/R ➄/R Package (mm) 2.7 × 15 6 × 7.6 8.9 × 10.1 15 × 16.5 3.0 × 40 Active area size (mm) 1.1 × 5.9 2.4 × 2.4 5.8 × 5.8 10 × 10 1.2 × 29.1 Effective active area (mm2) 6.4 5.7 33 100 35 Absolute maximum ratings Operating Storage Reverse temperature temperature voltage Topr Tstg VR Max. (V) (°C) (°C) S2387-16R S2387-33R S2387-66R S2387-1010R S2387-130R 30 -20 to +60 -20 to +80 s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Spectral response range λ Peak sensitivity wavelength λp (nm) Photo sensitivity S (A/W) λp GaP LED Short circuit Dark current current Isc ID 100 lx He-Ne V R =10 m V Min. Typ. laser Max. (µA) (µA) 4.4 6.0 4.4 5.8 24 31 68 91 25 32 (pA) 5 50 200 100 1.12 Terminal Temp. Shunt NEP coeffi- Rise time capaci- resistance tance tr VR=0 V cient Rsh Ct of ID VR=0 V λ=λp V R =10 m V TCID RL=1 kΩ VR=0 V f=10 kHz Min. Typ. (times/° C) (µs) (pF) (GΩ ) (GΩ ) (W/Hz1/2) 1.8 10 33 11 730 2 50 9.9 × 10-16 Type No. (nm) 560 nm 633 nm S2387-16R S2387-33R 320 to 1100 960 0.58 S2387-66R S2387-1010R S2387-130R * Window material, R: resin coating 0.33 0.37 4300 0.2 10 2.2 × 10-15 12000 0.05 5 3.1 × 10-15 5000 0.1 20 1.6 × 10-15 1 Si photodiode s Spectral response 0.7 0.6 (Typ. Ta=25 ˚C) S2387 series s Photo sensitivity temperature characteristic +1.5 (Typ.) TEMPERATURE COEFFICIENT (%/˚C) PHOTO SENSITIVITY (A/W) 0.5 0.4 0.3 0.2 +1.0 +0.5 0 0.1 0 200 400 600 800 1000 -0.5 200 400 600 800 1000 WAVELENGTH (nm) KSPDB0115EA WAVELENGTH (nm) KSPDB0058EB s Rise time vs. load resistance 1 ms S2387-130R 100 µs (Typ. Ta=25 ˚C, VR=0 V) S2387-1010R s Dark current vs. reverse voltage 1 nA S2387-1010R 100 pA S2387-66R (Typ. Ta=25 ˚C) 10 µs DARK CURRENT RISE TIME 10 pA S2387-130R 1 pA 1 µs 100 ns S2387-16R/33R 100 fA S2387-16R/33R 10 ns 102 103 104 105 10 fA 0.01 0.1 1 10 100 LOAD RESISTANCE (Ω) KSPDB0116EA REVERSE VOLTAGE (V) KSPDB0117EA s Shunt resistance vs. ambient temperature 10 TΩ S2387-16R/33R 1 TΩ (Typ. VR=10 mV) SHUNT RESISTANCE 100 GΩ 10 GΩ 1 GΩ 100 MΩ 10 MΩ 1 MΩ 100 kΩ -20 S2387-1010R S2387-130R 0 20 40 60 80 AMBIENT TEMPERATURE (˚C) KSPDB0118EA 2 Si photodiode s Dimensional outlines (unit: mm) ➀ S2387-16R 2.7 ± 0.1 HOLE (2 ×) 0.8 S2387 series ➁ S2387-33R 7.6 ± 0.1 ACTIVE AREA PHOTOSENSITIVE SURFACE 1.5 ± 0.1 0.45 13.5 ± 0.13 0.35 15 ± 0.15 0.75 0.5 LEAD ANODE TERMINAL MARK 8.5 ± 0.2 ANODE TERMINAL MARK 6.2 0.5 LEAD 6.6 ± 0.3 4.5 ± 0.2 Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0106EA 5.0 ± 0.3 10.5 2.0 ± 0.1 ACTIVE AREA PHOTOSENSITIVE SURFACE 6.0 ± 0.1 Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0108EA ➂ S2387-66R 10.1 ± 0.1 ➃ S2387-1010R 16.5 ± 0.2 8.9 ± 0.1 ACTIVE AREA PHOTOSENSITIVE SURFACE 0.75 PHOTOSENSITIVE SURFACE 0.3 0.9 0.3 10.5 0.5 LEAD 9.2 ± 0.3 7.4 ± 0.2 ANODE TERMINAL MARK 0.5 LEAD 15.1 ± 0.3 12.5 ± 0.2 ANODE TERMINAL MARK 8.0 ± 0.3 Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0110EA 13.7 ± 0.3 10.5 2.15 ± 0.1 2.0 ± 0.1 15.0 ± 0.15 ACTIVE AREA Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0112EA 3 Si photodiode S2387 series ➄ S2387-130R 40.0 ± 0.7 33.1 ± 0.7 29.1 1.2 3.0+0 - 0.3 ACTIVE AREA 3.2 ± 0.2 PHOTOSENSITIVE SURFACE 0.45 LEAD 33.1 ± 0.7 13 0.4 Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0117EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4 Cat. No. KSPD1033E03 Aug. 2006 DN