S2551

PHOTODIODE Si photodiode S2551 For visible to infrared precision photometry S2551 is a Si photodiode having a long active area of 1.2 × 29.1 mm, designed for visible to infrared precision photometry. Features Applications l Long, narrow active area: 1.2 × 29.1 mm l High sensitivity l Low capacitance l Analytical instruments l Optical measurement equipment s Absolute maximum ratings Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Value 30 -20 to +60 -20 to +80 Unit V °C °C s Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Short circuit current Dark current T e m p erature coefficient of I D Rise time Terminal capacitance Shunt resistance Noise equivalent power Symbol λ λp S Isc ID TCID tr Ct Rsh NEP Condition Min. 24 0.01 Typ. 320 to 1060 920 0.6 0.37 30 1.15 1.4 350 0.03 3.9 × 10-14 Max. 1 Unit nm nm A/W A/W µA nA times/°C µs pF GΩ W/Hz1/2 λ=λp λ=663 nm 100 lx VR=10 mV VR=0 V, RL=1 kΩ VR=0 V, f=10 kHz VR=10 mV VR=0 V, λ=λp Si photodiode s Spectral response 0.7 (Typ. Ta =25 ˚C) S2551 s Photo sensitivity temperature characteristic +1.5 (Typ. ) 0.6 TEMPERATURE COEFFICIENT (%/˚C) PHOTO SENSITIVITY (A/W) 0.5 0.4 0.3 0.2 0.1 +1.0 +0.5 0 190 400 600 800 1000 -1.5 190 400 600 800 1000 WAVELENGTH (nm) KSPDB0173EA WAVELENGTH (nm) KSPDB0053EB s Rise time vs. load resistance 1 ms (Typ. Ta=25 ˚C, VR=0 V) s Dark current vs. reverse voltage 10 nA (Typ. Ta=25 ˚C) 100 µs 1 nA 10 µs DARK CURRENT 103 104 105 RISE TIME 100 pA 1 µs 10 pA 100 ns 1 pA 10 ns 102 100 fA 0.01 0.1 1 10 LOAD RESISTANCE (Ω) REVERSE VOLTAGE (V) KSPDB0174EA KSPDB0175EA s Shunt resistance vs. ambient temperature 1 TΩ 100 GΩ 10 GΩ 1 GΩ 100 MΩ 10 MΩ 1 MΩ 100 kΩ 10 kΩ -20 (Typ. VR=10 mV) s Dimensional outline (unit: mm) 40.0 ± 0.7 33.1 ± 0.7 29.1 1.2 3.2 ± 0.2 ACTIVE AREA 1.2 × 29.1 PHOTOSENSITIVE SURFACE 0.45 LEAD 33.1 ± 0.7 0.5 3.0+0 - 0.3 SHUNT RESISTANCE 0 20 40 60 80 13 AMBIENT TEMPERATURE (˚C) KSPDB0176EA The resin coating may extend a maximum of 0.1 mm beyond the upper surface of the package. KSPDA0116EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KSPD1027E02 Aug. 2006 DN