S2829

PHOTOTRANSISTOR Phototransistor S2829 Subminiature package phototransistor S2829 is a high sensitivity phototransistor molded into a visible-cut plastic package. Features Applications l Subminiature plastic package with lens l Visible-cut package l High sensitivity: 1.0 mA (1000 lx) l Tape start/end mark sensor for VTRs, cassette tape recorders, etc. l Rotary encoders l Touch screen s Absolute maximum ratings (Ta=25 °C) Parameter Collector-emitter voltage Emitter-collector voltage Collector current Collector dissipation Operating temperature Storage temperature Soldering Symbol VCEO VECO Ic Pc Topr Tstg - Value 35 4 20 80 -25 to +85 -40 to +100 260 °C, 3 s, at least 2.5 mm away from package surface Min. 0.3 Typ. 1.0 850 2 3 Max. 100 0.4 - Unit V V mA mW °C °C Unit mA nA V nm µs µs s Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Condition VCE=5 V, 1000 lx Photocurrent * Ic VCE=20 V, 0 lx Dark current ICEO Collector-emitter saturation voltage VCE (sat) Ic=0.3 mA, 1000 lx Peak sensitivity wavelength λp Rise time tr Vcc=5 V, Ic=1 mA RL=100 Ω Fall time tf * Measured with a CIE standard “A” light source at 2856 K s Response time measurement circuit IF Vcc PULSE INPUT 90 % VO 10 % VO RL tr tf IF KPTRC0001EA Phototransistor s Spectral response 100 (Typ. Ta=25 ˚C) S2829 s Collector power dissipation vs. ambient temperature COLLECTOR POWER DISSIPATION (mW) 100 80 s Photocurrent vs. ambient temperature 160 (Typ. VCE=5 V, E=1000 lx) RELATIVE PHOTOCURRENT (%) 0 25 50 75 100 140 120 RELATIVE SENSITIVITY (%) 80 60 60 100 80 60 40 20 -25 40 40 20 20 0 400 500 600 700 800 900 1000 1100 1200 0 -25 0 25 50 75 100 WAVELENGTH (nm) KPTRB0005EA AMBIENT TEMPERATURE (˚C) KPCB0001EA AMBIENT TEMPERATURE (˚C) KPTRB0002EA s Dark current vs. ambient temperature 1 µA (Typ. VCE=20 V) 100 nA DARK CURRENT 10 nA 1 nA 100 pA 10 pA -25 0 25 50 75 100 AMBIENT TEMPERATURE (˚C) KPTRB0003EA s Dimensional outline (unit: mm) 3.5 5˚ 1.6 10˚ VISIBLE-CUT RESIN (BLACK) 1.3 0.72 (1.15) 3.5 0.57 R0.45 1.6 BURR 10˚ 0.16 0.6 0.4 5˚ 2.54 (SPECIFIED AT THE LEAD ROOT) EMITTER COLLECTOR Tolerance unless otherwise noted: ±0.2, ±2˚ Shaded area indicates burr. Values in parentheses are not guaranteed, but for reference. KPTRA0001EA HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 6.0 ± 1.0 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K. (1.0) Cat. No. KPTR1001E02 Mar. 2001 DN