S3399

PHOTODIODE Si PIN photodiode S3071, S3072, S3399, S3883 Large area, high-speed Si PIN photodiodes S3071, S3072, S3399 and S3883 are Si PIN photodiodes having a relatively large active area from φ1.5 to φ5.0 mm yet they offer excellent frequency response from 40 to 300 MHz. These photodiodes are suitable for spatial light transmission and high-speed pulsed light detection. Features S3071: φ5.0 mm S3072: φ3.0 mm S3399: φ3.0 mm S3883: φ1.5 mm l Cut-off frequency S3071: 40 MHz (VR=24 V) S3072: 45 MHz (VR=24 V) S3399: 100 MHz (VR=10 V) S3883: 300 MHz (VR=20 V) l High reliability: TO-5/8 metal package Applications l Active area size l Spatial light transmission l High-speed pulsed light detection s General ratings / Absolute maximum ratings Type No. Dimensional outline/ Window material *1 ➀/K ➁/K ➂/K ➃/K Package (mm) TO-8 TO-5 Active area size (mm) φ5.0 φ3.0 φ3.0 φ1.5 Effective active area (mm2) 19.6 7.0 7.0 1.7 Reverse voltage VR Max. (V) 50 50 30 -40 to +100 -55 to +125 Absolute maximum ratings Power Operating Storage dissipation temperature temperature P Topr Tstg (mW) (°C) (°C) S3071 S3072 S3399 S3883 s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Short circuit current Type No. Isc λp 660 nm 780 nm 830 nm 100 lx (µA) (nm) (nm) S3071 17 320 to 1060 920 0.6 0.47 0.54 0.56 S3072 6.5 S3399 5.6 320 to 1000 840 0.6 0.45 0.58 0.6 1.4 S3883 *1: Window material K: borosilicate glass *2: VR=20 V *3: VR=24 V *4: VR=10 V Spectral Peak response sensitivity range wavelength λp λ Photo sensitivity S (A/W) Dark current ID (nA) Cut-off Temp. Terminal coefficient frequency capacitance fc of ID Ct TCID f=1 MHz RL=50 Ω (MHz) 40 *3 45 *3 100 *4 300 *2 (pF) 18 *3 7 *3 20 *4 6 *2 NEP λ=λp (W/Hz1/2) 2.1 × 10 -14 * 3 1.6 × 10 -14 * 3 9.4 × 10 -15 * 4 6.7 × 10 -15 * 2 Typ. Max. (tim es/° C) 0.5*3 10 *3 1.15 0.3*3 10 *3 4 4 0.1* 1.0 * 0.05* 2 1.0 *2 1.12 1 Si PIN photodiode s Spectral response (Typ. Ta=25 ˚C) S3071, S3072, S3399, S3883 s Photo sensitivity temperature characteristics (Typ.) 0.7 +1.5 0.6 TEMPERATURE COEFFICIENT (%/˚C) PHOTO SENSITIVITY (A/W) 0.5 0.4 0.3 +1.0 S3071, S3072 +0.5 S3399, S3883 0.2 0.1 0 200 S3399, S3883 0 S3071, S3072 400 600 800 1000 -0.5 200 400 600 800 1000 WAVELENGTH (nm) WAVELENGTH (nm) KPINB0147EA KPINB0148EA s Dark current vs. reverse voltage (Typ. Ta=25 ˚C) s Terminal capacitance vs. reverse voltage (Typ. Ta=25 ˚C, f=1 MHz) 10 nA 1 nF TERMINAL CAPACITANCE S3072 1 nA S3071 S3399 100 pF S3071 DARK CURRENT 100 pA S3399 10 pA S3883 1 pA 0.1 10 pF S3072 S3883 1 10 100 1 pF 0.1 1 10 100 REVERSE VOLTAGE (V) REVERSE VOLTAGE (V) KPINB0149EA KPINB0150EA 2 Si PIN photodiode s Dimensional outline (unit: mm) ➀ S3071 13.9 ± 0.2 S3071, S3072, S3399, S3883 ➁ S3072 WINDOW 5.9 ± 0.1 9.1 ± 0.2 0.5 MAX. 2.7 PHOTOSENSITIVE SURFACE 0.45 LEAD 5.0 ± 0.2 PHOTOSENSITIVE SURFACE 0.4 MAX. 5.08 ± 0.25 15 2.5 The glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KPINA0024EB 0.45 LEAD 7.5 ± 0.2 INDEX MARK 1.4 1.0 MAX. 1.5 MAX. CASE The glass window may extend a maximum of 0.3 mm above the upper surface of the cap. CASE KPINA0027EC ➂ S3399 WINDOW 5.9 ± 0.1 9.1 ± 0.2 4.2 ± 0.2 ➃ S3883 WINDOW 3.0 MIN. 9.1 ± 0.2 8.2 ± 0.2 20 4.2 ± 0.2 WINDOW 10.5 ± 0.1 12.35 ± 0.1 8.1 ± 0.1 8.1 ± 0.2 PHOTOSENSITIVE SURFACE 0.45 LEAD 2.6 PHOTOSENSITIVE SURFACE 0.4 MAX. 0.45 LEAD 0.4 MAX 5.08 ± 0.25 20 2.6 20 5.08 ± 0.25 1.5 MAX. 1.5 MAX. CASE The glass window may extend a maximum of 0.2 mm above the upper surface of the cap. CASE KPINA0026EA 4.75 ± 0.2 KPINA0025EB Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KPIN1044E03 Aug. 2006 DN