S3584-08

PHOTODIODE Si PIN photodiode S3204/S3584 series Large area sensors for scintillation detection S3204/S3584 series are large area Si PIN photodiodes having an epoxy resin window. These photodiodes are also available without window. Features Applications l Higher sensitivity and low dark current than conventional type l Sensitivity matching with BGO and CsI (TI) scintillators l High quantum efficiency QE=85 % (λ=540 nm) l Low capacitance l High-speed response l High stability l Good energy resolution l Scintillation detectors l Calorimeters l Hodoscopes l TOF counters l Air shower counters l Particle detectors, etc. s General ratings / Absolute maximum ratings Type No. Dimensional outline Window material Epoxy resin Window-less Epoxy resin Window-less Epoxy resin Window-less Epoxy resin Window-less Active area (mm) S3204-05 S3204-06 S3204-08 S3204-09 S3584-05 S3584-06 S3584-08 S3584-09 ➀ 18 × 18 0.3 0.5 28 × 28 0.3 100 100 100 150 -20 to +60 -20 to +80 Depletion layer thickness (mm) 0.5 Reverse voltage VR Max. 150 Absolute maximum ratings Power Operating dissipation temperature P Topr (mW) (°C) Storage temperature Tstg (°C) ➁ s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) S p ectral response range λ (nm) S3204-05 320 to 1120 S3204-06 S3204-08 320 to 1100 S3204-09 S3584-05 320 to 1120 S3584-06 S3584-08 320 to 1100 S3584-09 *1: VR=70 V Peak sensitivity wavelength λp (nm) 980 960 980 960 Photo sensitivity S LSO 420 nm (A/W) (A/W) 0.62 0.19 0.64 0.23 0.66 0.20 0.66 0.22 0.62 0.19 0.64 0.23 0.66 0.20 0.66 0.22 λ=λp BGO CsI(Tl) 480 nm 540 nm (A/W) (A/W) 0.25 0.3 0.32 0.39 0.3 0.36 0.33 0.41 0.25 0.3 0.32 0.39 0.3 0.36 0.33 0.41 Dark S h ort Cut-off circuit current Temp. Frequency ID current fc coefficient V R = 10 0 V Isc of ID V R = 10 0 V 100 lx Typ. Max. TCID -3 dB (µA) 310 340 740 780 (nA) (nA) (tim es/° C) (MHz) 15 50 20 20 * 1.12 20 100 10 * 30 * 10 10 * 200 300 * 1.3 × 10 - 13 Type No. Ter minal capacitance Ct NEP f= 1 M H z VR=100 V V R =100 V (pF) 80 130 * (W/Hz1/2) 1.2 × 10 - 13 6 * 20 * 6.6 × 10 – 14 * 8.6 × 10 – 14 * 1 Si PIN photodiode s Spectral response 0.7 0.6 (Typ. Ta=25 ˚C) S3204/S3584 series s Photo sensitivity temperature characteristic +1.5 (Typ.) s Spectral response (without window) 0.7 0.6 (Typ. Ta=25 ˚C) PHOTO SENSITIVITY (A/W) S3204/S3584-08 0.5 0.4 0.3 0.2 0.1 0 200 PHOTO SENSITIVITY (A/W) S3204/S3584-09 0.5 0.4 TEMPERATURE COEFFICIENT (%/˚C) +1.0 S3204/S3584-06 0.3 0.2 0.1 0 200 +0.5 S3204/S3584-05 0 400 600 800 1000 1200 400 600 800 1000 1200 -0.5 200 400 600 800 1000 WAVELENGTH (nm) KPINB0227EA WAVELENGTH (nm) WAVELENGTH (nm) KPINB0264EA KPINB0093EC s Dark current vs. reverse voltage 100 nA S3204-05/-06 S3584-05/-06 (Typ. Ta=25 ˚C) s D ark current vs. ambient temperature 10 µA S3584-05/-06 (VR=100 V) 1 µA S3204-05/-06 (VR=100 V) s Terminal capacitance vs. reverse voltage (Typ.) 10 nF (Typ. Ta=25 ˚C, f=1 MHz) S3584-08/-09 TERMINAL CAPACITANCE DARK CURRENT 100 nA 10 nA S3584-08/-09 (VR=70 V) 1 nA S3204-08/-09 (VR=70 V) S3584-05/-06 1 nF S3204-08/-09 DARK CURRENT 10 nA S3204-08/-09 1 nA S3584-08/-09 100 pF S3204-05/-06 100 pA 10 pA 100 pA 0.1 1 10 100 1000 1 pA -20 0 20 40 60 80 10 pF 0.1 1 10 100 1000 REVERSE VOLTAGE (V) KPINB0228EB AMBIENT TEMPERATURE (˚C) KPINB0229EB REVERSE VOLTAGE (V) KPINB0230EB s Dimensional outlines (unit: mm) ➀ S3204 series 25.5 +0 - 0.6 3.4 18.0 ➁ S3584 series 35.6 +0 - 0.8 3.4 28.0 25.5 +0 - 0.6 ACTIVE AREA ACTIVE AREA 2.54 ± 0.2 PHOTOSENSITIVE SURFACE 0.45 LEAD 1.75 WHITE CERAMIC 0.45 LEAD 1.75 Type No. 5.0 ± 0.2 a S3204-05/-06 1.0 S3204-08/-09 1.2 Type No. a S3584-05/-06 1.0 KPINA0040EB 5.0 ± 0.2 10 WHITE CERAMIC 10 2.54 ± 0.2 PHOTOSENSITIVE SURFACE a a 35.6 +0 - 0.8 18.0 28.0 S3584-08/-09 1.2 KPINA0041EB Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KPIN1051E05 Mar. 2006 DN