S3588-08

PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features q Higher sensitivity and low dark current than conventional type q Sensitivity matching with BGO and CsI (TI) scintillators q High quantum efficiency QE=85 % (λ=540 nm) q Low capacitance q High-speed response q High stability q Good energy resolution Applications q Scintillation detectors q Calorimeters q Hodoscopes q TOF counters q Air shower counters q Particle detectors, etc. s General ratings / Absolute maximum ratings Type No. Dimensional outline Window material Epoxy resin Window-less Epoxy resin Window-less Active area (mm) S2744-08 S2744-09 S3588-08 S3588-09 ➀ ➁ 10 × 20 0.3 3 × 30 100 100 -20 to +60 -20 to +80 Depletion layer thickness (mm) Reverse voltage VR Max. Absolute maximum ratings Power Operating dissipation temperature P Topr (mW) (°C) Storage temperature Tstg (°C) s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) S p ectral response range λ (nm) S2744-08 S2744-09 S3588-08 S3588-09 320 to 1100 P e ak sensitivity wavelength λp (nm) 960 Photo sensitivity S λ=λp (A/W) 0.66 0.66 0.66 0.66 LSO BGO CsI(Tl) 420 nm 480 nm 540 nm (A/W) (A/W) (A/W) 0.20 0.30 0.36 0.22 0.33 0.41 0.20 0.30 0.36 0.22 0.33 0.41 Dark S h ort Terminal current circuit Cut-off capacitance Temp. ID current Ct NEP coefficient Frequency R=70 V V f= 1 M H z V R = 70 V Isc fc of ID 100 lx Typ. Max. TCID V R = 70 V V R = 70 V (µA) 200 3 90 10 1.12 40 40 (nA) (nA) (times/° C) (MHz) 25 (pF) 85 4.7 × 10 - 14 (W/Hz 1/2 ) Type No. Si PIN photodiode s Spectral response 0.7 0.6 (Typ. Ta=25 ˚C) S2744/S3588-08, -09 s Dark current vs. reverse voltage 10 nA (Typ. Ta=25 ˚C) s Photo sensitivity temperature characteristic +1.5 (Typ.) PHOTO SENSITIVITY (A/W) S2744/S3588-09 0.5 0.4 0.3 0.2 0.1 0 200 TEMPERATURE COEFFICIENT (%/˚C) +1.0 1 nA +0.5 DARK CURRENT 100 pA S2744/S3588-08 0 10 pA 400 600 800 1000 1200 -0.5 200 400 600 800 1000 1 pA 0.1 1 10 100 WAVELENGTH (nm) KPINB0265EB WAVELENGTH (nm) REVERSE VOLTAGE (V) KPINB0093EC KPINB0220EA s Dark current vs. ambient temperature 1 µA (Typ. VR=70 V) s Terminal capacitance vs. reverse voltage 10 nF (Typ. Ta=25 ˚C, f=1 MHz) 100 nA TERMINAL CAPACITANCE DARK CURRENT 10 nA 1 nF S2744-08/-09 1 nA 100 pA 100 pF 10 pA 1 pA -20 0 20 40 60 80 10 pF 0.1 S3588-08/-09 1 10 100 AMBIENT TEMPERATURE (˚C) KPINB0221EA REVERSE VOLTAGE (V) KPINB0222EB s Dimensional outlines (unit: mm) ➀ S2744-08/-09 27.0 +0 - 0.6 2.0 20.0 ➁ S3588-08/-09 34.0 +0 - 0.8 +0 1.2 30.0 14.2 - 0.4 10.0 +0 ACTIVE AREA ACTIVE AREA 2.0 ± 0.2 0.5 PHOTOSENSITIVE SURFACE 0.45 PHOTOSENSITIVE SURFACE 10 WHITE CERAMIC WHITE CERAMIC  0.45 LEAD 2.5  0.45 LEAD 1.1 5.0 ± 0.2 2.5 ± 0.2 The coating resin may extend a maximum of 0.1 mm beyond the upper surface of the package. KPINA0039EB 10 The coating resin may extend a maximum of 0.1 mm beyond the upper surface of the package. 1.52 ± 0.2 3.0 5.8 -0.4 KPINA0042EB Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KPIN1049E04 Mar. 2006 DN