PHOTODIODE
Si PIN photodiode
S3590-08/-09
Large area sensors for scintillation detection
Features Applications
l Higher sensitivity and low dark current than conventional type l Sensitivity matching with BGO and CsI (TI) scintillators l High quantum efficiency: QE=85 % (λ=540 nm) l Low capacitance l High-speed response l High stability l Good energy resolution
l Scintillation detectors l Calorimeters l Hodoscopes l TOF counters l Air shower counters l Particle detectors, etc.
s General ratings / Absolute maximum ratings
Window material Epoxy resin Window-less Active area (mm) S3590-08 S3590-09 10 × 10 Depletion layer thickness (mm) 0.3 Reverse voltage VR Max. 100 Absolute maximum ratings Power Operating dissipation temperature P Topr (mW) (°C) 100 -20 to +60 Storage temperature Tstg (°C) -20 to +80
Type No.
s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
S p ectral P e ak response se nsitivity range w avelength λ=λp λ λp (nm) 320 to 1100 (nm) 960 S h ort Dark Term inal Temp. circuit current c oefficient C ut-off capacitance NEP cu rre n t ID VR=70 V of ID F reque nc y Ct Isc f= 1MHz fc LSO BGO CsI(Tl) 100 lx Typ. Max. TCID 420 nm 480 nm 540 nm 1/2 (pF) (W/Hz ) (A/W) (A/W) (A/W) (A/W) (µA) ( nA) (nA) ( tim es/°C ) (MHz) 0.66 0.20 0.30 0.36 - 14 100 2* 6* 1.12 40 * 40 * 3 .8 × 10 0.66 0.22 0.33 0.41 Photo sensitivity S
Type No.
S3590-08 S3590-09 * VR=70 V
1
Si PIN photodiode
s Spectral response S3590-08
0.7 (Typ. Ta=25 ˚C)
S3590-08/-09
S3590-09
0.7 (Typ. Ta=25 ˚C)
s Photo sensitivity temperature characteristic
+1.5 (Typ.)
0.6
0.6
TEMPERATURE COEFFICIENT (%/˚C)
PHOTO SENSITIVITY (A/W)
PHOTO SENSITIVITY (A/W)
0.5 0.4
0.5 QE=100 % 0.4
+1.0
+0.5
0.3 0.2 0.1 0 200
0.3 0.2 0.1 0 200
0
400
600
800
1000
1200
400
600
800
1000
1200
-0.5 200
400
600
800
1000
WAVELENGTH (nm)
KPINB0231EB
WAVELENGTH (nm)
KPINB0263EB
WAVELENGTH (nm)
KPINB0093ED
s Dark current vs. reverse voltage
100 nA (Typ. Ta=25 ˚C)
s Dark current vs. ambient temperature s Terminal capacitance vs. reverse voltage
1 µA (Typ. VR=70 V)
(Typ. Ta=25 ˚C, f=1 MHz) 10 nF
DARK CURRENT
10 nA
TERMINAL CAPACITANCE
0 20 40 60 80
100 nA
DARK CURRENT
1 nF
10 nA
1 nA
1 nA
100 pF
100 pA
100 pA 0.1
10 pA
1
10
100
1000
10 pF 0.1
1
10
100
1000
REVERSE VOLTAGE (V)
KPINB0232EC
AMBIENT TEMPERATURE (˚C)
KPINB0233ED
REVERSE VOLTAGE (V)
KPINB0234EC
s Dimensional outline (unit: mm)
14.5 -0.5 1.4 10.0
+0
0.7
PHOTOSENSITIVE SURFACE 0.45 LEAD
WHITE CERAMIC
10
1.78 ± 0.2
ACTIVE AREA
12.7 - 0.5
10.0
+0
The coating resin may extend a maximum of 0.1 mm beyond the upper surface of the package.
5.0 ± 0.2
1.25
KPINA0014EF
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
2
Cat. No. KPIN1052E06 Oct. 2007 DN
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