S3901-FX

IMAGE SENSOR NMOS linear image sensor S3901-FX series Image sensor highly sensitive to X-rays from 10 k to 100 keV NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is made up of N-channel MOS transistors, has low power consumption and is easy to handle. Each photodiode has a large active area, high UV sensitivity yet very low noise, delivering a high S/N even at low light levels. Current output type NMOS linear image sensors also offer excellent output linearity and wide dynamic range. S3901-FX series image sensors are variants of S3901-F series NMOS image sensors. Having a phosphor-coated fiber optic plate (FOP) as the light input window, the S3901-FX series was developed for detection of X-rays and electrons. The S3901-FX offers particularly high sensitivity to X-rays from 10 k to 100 keV. The phosphor material used is gadolinium ox sulfide (Gd 2O 2S · Tb) whose composition is carefully selected to provide optimum sensitivity and resolution with a peak emission at 550 nm wavelength. The S3901-FX series active area consists of a photodiode array with pixels formed at 50 µm pitches and a height of 2.5 mm. The number of pixels can be selected from 256 or 512. Hamamatsu S3902/S3903/S3904 series NMOS linear image sensors are also available with FOP windows coated with the same phosphor material as S3901-FX series. Using photodiodes with no phosphor and FOP window also allows direct detection of X-rays at energy levels below 10 keV. Features Applications l Wide active area Pixel pitch: 50 µm Pixel height: 2.5 mm l Low dark current and high saturation charge allow a long integration time and a wide dynamic range at room temperature l Excellent output linearity and sensitivity spatial uniformity l Low power consumption: 1 mW Max. l Start pulse and clock pulse are CMOS logic compatible l Test equipment using X-ray and electron beam transmission l X-ray non-destructive inspection l X-ray and electron beam detector Figure 1 Equivalent circuit START CLOCK CLOCK st 1 2 DIGITAL SHIFT REGISTER (MOS SHIFT REGISTER) END OF SCAN Figure 2 Active area structure ACTIVE PHOTODIODE ACTIVE VIDEO Vss SATURATION CONTROL GATE SATURATION CONTROL DRAIN DUMMY DIODE OXIDATION SILICON KMPDC0020EA 45 µm 50 µm DUMMY VIDEO PHOSPHOR MATERIAL FIBER OPTIC PLATE 1.0 µm 1.0 µm KMPDC0008EA 2.5 mm N TYPE SILICON P TYPE SILICON s Absolute maximum ratings Parameter Input pulse (φ1, φ2, φst) voltage Power consumption *1 Operating temperature *2 Storage temperature Symbol Vφ P Topr Tstg Value 15 1 -30 to +60 -40 to +80 Unit V mW °C °C *1: Vφ=5.0 V *2: No condensation 400 µm NMOS linear image sensor s Shape specifications S3901-FX series Parameter S3901-256FX S3901-512FX Unit Number of pixels 256 512 Package length 31.75 40.6 mm Number of pin 22 Window material * 3 Fiber optic plate Weight 8.0 10.0 g *3: To prevent unwanted effects from stray light, S3901-FX series is supplied with an aluminum cover fitted on the phosphorcoated FOP. s Specifications (Ta=25 °C) Parameter Pixel pitch Pixel height Spectral response range (20 % of peak) Photo sensitivity Photodiode dark current *4 Photodiode capacitance *4 Saturation exposure *4 Saturation output charge *4 Photo response non-uniformity *5 Symbol λ S ID Cph Esat Qsat PRNU Min. - Typ. 50 2.5 10 to 100 14 0.2 20 2.8 50 - Max. 0.6 ±10 Unit µm mm keV pC/mR pA pF mR pC % *4: Vb=2.0 V, V φ=5.0 V *5: Measured under the following conditions including uniformity in the phosphor emission (but excluding dark current components). Tungsten cathode X-ray tube: 40 keV Distance between S3901-FX series and X-ray tube: 30 cm Phosphor material: Gd 2O 2S . Tb (thickness=200 µm, λp=550 nm, decay time=1 ms) s Electrical characteristics (Ta=25 °C) Parameter Symbol High Vφ1, V φ2 (H) Clock pulse (φ1, φ2) voltage Low V φ1, V φ2 (L) High V φs (H) Start pulse ( φst) voltage Low Vφs (L) Video bias voltage *6 Vb Saturation control gate voltage Vscg Saturation control drain voltage Vscd trφ1, tr φ2 7 Clock pulse (φ1, φ2) rise / fall time * tfφ1, tf φ2 Clock pulse ( φ1, φ2) pulse width tpw φ1, tpw φ2 Start pulse ( φst) rise / fall time trφs, tf φs Start pulse (φst) pulse width tpw φs Start pulse ( φst) and clock pulse tφov (φ2) overlap 7 Clock pulse space * X1 , X 2 Data rate * 8 f Video delay time Clock pulse ( φ1, φ2) line capacitance Saturation control gate (Vscg) line capacitance Video line capacitance tvd Cφ Cscg CV Condition Min. 4.5 0 4.5 0 1.5 200 200 200 trf - 20 0.1 Typ. 5 V φ1 Vφ - 3.0 0 Vb 20 20 120 (-256 FX) 160 (-512 FX) 36 67 20 35 11 20 (-256 (-512 (-256 (-512 (-256 (-512 FX) FX) FX) FX) FX) FX) Max. 10 0.4 10 0.4 V φ - 2.5 2000 - Unit V V V V V V V ns ns ns ns ns ns kHz ns ns pF pF pF pF pF pF 50 % of 8, 9 saturation * * 5 V bias 5 V bias 2 V bias - *6: Vφ is input pulse voltage *7: trf is the clock pulse rise or fall time. A clock pulse space of “rise time/fall time - 20” ns (nanoseconds) or more should be input if the clock pulse rise or fall time is longer than 20ns. *8: Vb=2.0 V, Vφ=5.0 V *9: Measured with C7883 driver circuit. NMOS linear image sensor Figure 3 Dimensional outlines (unit: mm) S3901-256FX 6.4 ± 0.3 S3901-FX series S3901-512FX 12.8 ± 0.3 5.4 ± 0.2 5.0 ± 0.2 10.4 5.4 ± 0.2 ACTIVE AREA 12.8 × 2.5 ACTIVE AREA 25.6 × 2.5 5.0 ± 0.2 10.4 31.75 PHOTOSENSITIVE SURFACE 10.0 40.6 PHOTOSENSITIVE SURFACE 10.0 3.0 3.4 0.51 2.54 25.4 10.16 0.25 0.51 2.54 25.4 10.16 3.0 3.4 0.25 KMPDA0031EA KMPDA0032EA Figure 4 Pin connection 2 1 st Vss Vscg NC Vscd Vss ACTIVE VIDEO DUMMY VIDEO Vsub 1 2 3 4 5 6 7 8 9 10 11 22 21 20 19 18 17 16 15 14 13 12 NC NC NC NC NC NC NC NC NC NC END OF SCAN Vss, Vsub and NC should be grounded. KMPDC0056EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KMPD1005E04 Oct. 2005 DN