S3994-01_10

PHOTODIODE Si PIN photodiode S3994-01 Si PIN photodiode for optical power meters S3994-01 is a Si PIN photodiode designed for optical power meters. Compared to the previous type (S3994), S3994-01 has an improved anti-reflection film. The flat glass used as the light input window is less susceptible to scratches than resin windows, allowing easy handling. Features Applications l Thin package (1.4 mm Max.) l High sensitivity: 0.28 A/W Typ. (λ=410 nm) l Large active area: 10 × 10 mm l Optical power meter s Absolute maximum ratings (Ta=25 °C) Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Value 50 -20 to +60 -20 to +80 Unit V °C °C s Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Dark current Terminal capacitance Cut-off frequency Symbol λ λp S ID Ct fc Condition Min. 0.24 Typ. 320 to 1100 960 0.28 3 40 20 Max. 10 Unit nm µm A/W nA pF MHz λ=410 nm VR=30 V VR=30 V, f=1 MHz VR=30 V, RL=50 Ω -3 dB 1 Si PIN photodiode s Spectral response (Typ. Ta=25 ˚C) 0.7 0.6 S3994-01 (Typ. Ta=25 ˚C) s Dark current vs. reverse voltage 100 nA PHOTO SENSITIVITY (A/W) 0.5 DARK CURRENT 400 600 800 1000 1200 10 nA 0.4 0.3 0.2 0.1 0 200 1 nA 100 pA 0.01 0.1 1 10 100 WAVELENGTH (nm) KPINB0198EA REVERSE VOLTAGE (V) KPINB0199EA s Terminal capacitance vs. reverse voltage 1 nF (Typ. Ta=25 ˚C) s Dimensional outline (unit: mm) 15.0 ± 0.5 GLASS 10.5 1.0 10.0 (4.0) SOLDERING TERMINAL CAPACITANCE 11.6 ± 0.2 GLASS 11.0 (6.0) 10.0 RED WHITE 0.7 LEAD 100 pF ACTIVE AREA GLASS PHOTOSENSITIVE SURFACE RESIN 1.4 MAX. CERAMIC 10 pF 0.1 1 10 100 KPINA0078EA REVERSE VOLTAGE (V) KPINB0200EA HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)" which means developmental specifications. ©2010 Hamamatsu Photonics K.K. U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KPIN1057E02 Jul. 2010 DN