S4011-04

PHOTODIODE Si photodiode S5493-01, etc. Photodiodes molded into clear plastic packages These are Si photodiodes molded into clear plastic packages. Spectral response characteristics for these Si photodiodes can be selected to meet your application, from among the visible range, visible to near IR range, and visible to infrared range. Two active areas of 1.3 × 1.3 mm and 2.4 × 2.8 mm are also available. S5493-01 and S5627-01 provide a spectral response characteristic similar to the visible range sensitivity without using visual-compensated filters. Features Applications l S5493-01, S5627-01: Visible range (Filterless type) l S4797-01, S6931 : Visible to near IR range l S2833-01, S4011-04: Visible to infrared range l Exposure meter l Illuminometer l Camera auto exposure l Stroboscope light control l Copier l Display light control l Optical switch s General ratings / Absolute maximum ratings Dimensional outline/ Window material * Active area size (mm) 2.4 × 2.8 1.3 × 1.3 2.4 × 2.8 1.3 × 1.3 2.4 × 2.8 1.3 × 1.3 Effective active area (mm2) 6.6 1.6 6.6 1.6 6.6 1.6 Absolute maximum ratings Reverse Operating Storage voltage temperature temperature VR Max. Topr Tstg (V) (°C) (°C) Type No. S5493-01 ➀/R S5627-01 ➁/R S6931 ➂/R S4797-01 ➃/R S2833-01 ➄/R S4011-04 ➅/R * Window material R: clear resin coating 10 -25 to +85 -40 to +100 s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) S p ectral Peak response sensitivity range wavelength λ λp (nm) 320 to 840 320 to 1000 320 to 1100 (nm) 540 720 960 0.3 0.48 0.4 0.58 Photo sensitivity Short Te mp. S Infrared circuit coefficient (A/W) sensitivity current of GaP He-Ne ratio Isc Isc LED Laser λp 100 lx 560 nm 633 nm 0.28 0.4 0.33 0.2 0.45 0.37 0.38 (%) 35 (µA) 1.0 0.25 4.2 1.2 6.5 1.9 D ark Te mp. Rise Terminal Shunt current coefficient time capacitance resistance of Rsh tr ID Ct V R = 0 V V R = 0 V V R =10 m V VR=1 V ID Max. TCID R L =1 kΩ f=10 kHz Min. Typ. (%/°C) (pA) (times/° C) (µs) (pF) (GΩ) (GΩ) 100 10 3000 0.1 1 0.25 1.13 50 2 700 0.5 5 0.5 200 20 50 0.2 50 0.1 1.12 10 2.5 700 100 10 0.5 200 250 Type No. S5493-01 S5627-01 S6931 S4797-01 S2833-01 S4011-04 - 1 Si photodiode s Spectral response 0.7 (Typ. Ta=25 ˚C) S5493-01, etc. (Typ. Ta=25 ˚C, VR=0 V) S5493-01 s Rise time vs. load resistance 1 ms 0.6 PHOTO SENSITIVITY (A/W) S2833-01 S4011-04 S6931 100 µs S2833-01 0.5 RISE TIME 10 µs 0.4 0.3 0.2 0.1 0 200 S4797-01 S5493-01 S5627-01 1 µs S6931 S4011-04 100 ns S4797-01 S5627-01 400 600 800 1000 10 ns 102 103 104 105 WAVELENGTH (nm) KSPDB0129EB LOAD RESISTANCE (Ω) KSPDB0130EC s Dark current vs. reverse voltage 1 nA (Typ. Ta=25 ˚C) s Shunt resistance temperature characteristics 10 TΩ 1 TΩ S4011-04 S2833-01 (Typ. VR=10 mV) 100 pA S5627-01 SHUNT RESISTANCE DARK CURRENT S4797-01 S6931 10 pA S5493-01 100 GΩ 10 GΩ 1 GΩ 100 MΩ 10 MΩ 1 MΩ 100 kΩ -20 S4797-01 S6931 S5627-01 S5493-01 1 pA S2833-01 100 fA S4011-04 10 fA 0.01 0.1 1 10 0 20 40 60 80 REVERSE VOLTAGE (V) KSPDB0131EB AMBIENT TEMPERATURE (˚C) KSPDB0132EB 2 Si photodiode s Dimensional outlines (unit: mm, tolerance unless otherwise noted: ±0.1 mm) ➀ S5493-01 4.6 ± 0.2 (INCLUDING BURR) 5.6 ± 0.2 (INCLUDING BURR) 1.0 ± 0.4 ( 0.7 0.5 PIN LEAD) S5493-01, etc. ➁ S5627-01 0.6 0.5 4.1 ± 0.2 (INCLUDING BURR) 1.6 ± 0.4 ( PIN LEAD) 5.0 ± 0.2 (INCLUDING BURR) 4.7 * 2.54 5.4 * 5.5 * 10 ˚ 10˚ 3˚ 0.4 0.8 1.8 4.5 * 0.6 1.0 4.0 * 5.75 ± 0.2 5˚ PHOTOSENSITIVE SURFACE 2.0 5.2 ± 0.2 10˚ PHOTOSENSITIVE SURFACE 4.5 ± 0.4 4.5 ± 0.4 3˚ CATHODE SUB ANODE SUB (SHORT LEAD) 0.25 5˚ CATHODE SUB ANODE SUB (SHORT LEAD) 7.5 ± 5˚ Chip position accuracy with respect to the package dimensions marked * X, Y ≤ ±0.2 θ ≤ ±2˚ SUB terminal should be open-circuited at use. 0.25 7.5 ± 5˚ Chip position accuracy with respect to the package dimensions marked * X, Y ≤ ±0.2 θ ≤ ±2˚ SUB terminal should be open-circuited at use. KSPDA0118EA 5˚ 2.54 0.6 0.5 2.54 KSPDA0119EA ➂ S6931 4.6 ± 0.2 (INCLUDING BURR) ➃ S4797-01 4.1 ± 0.2 (INCLUDING BURR) 0.5 5.6 ± 0.2 (INCLUDING BURR) 0.7 5.0 ± 0.2 (INCLUDING BURR) 5.4 * 5.5 * 2.54 4.7 * 10˚ 10˚ (0.8) 5.0 ± 0.4 (1.0) (1.0) 4.5 * (0.8) 5.0 ± 0.4 3˚ 4.0 * 5.2 ± 0.2 0.4 0.8 1.8 14.5 ± 0.3 10˚ NC CATHODE ANODE CATHODE Chip position accuracy with respect to the package dimensions marked * X, Y ≤ ±0.2 θ ≤ ±2˚ PHOTOSENSITIVE SURFACE NC CATHODE ANODE CATHODE Chip position accuracy with respect to the package dimensions marked * X, Y ≤ ±0.2 θ ≤ ±2˚ 0.3 MAX. PHOTOSENSITIVE 5˚ SURFACE 0.6 1.0 4.5 ± 0.4 2.0 0.25 0.3 MAX. 3˚ 0.25 5˚ 7.5 ± 5˚ KSPDA0122EA 5˚ 4.8 * KSPDA0121EA 4.8 * 3 Si photodiode ➄ S2833-01 4.6 ± 0.2 (INCLUDING BURR) 0.7 0.5 5.6 ± 0.2 (INCLUDING BURR) S5493-01, etc. ➅ S4011-04 4.1 ± 0.2 (INCLUDING BURR) 0.6 5.0 ± 0.2 (INCLUDING BURR) 5.4 * 5.5 * 2.54 4.7 * 2.54 10˚ 10˚ 3˚ (0.8) 5.0 ± 0.4 (1.0) (1.0) 4.5 * (0.8) 5.0 ± 0.4 1.5 ± 0.4 4.0 * 1.5 ± 0.4 0.5 0.8 7.0 ± 0.3 14.5 ± 0.3 PHOTOSENSITIVE 5˚ SURFACE 0.7 1.0 1.8 0.7 ± 0.3 PHOTOSENSITIVE SURFACE ANODE CATHODE NC CATHODE 0.3 MAX. NC CATHODE ANODE CATHODE Chip position accuracy with respect to the package dimensions marked * X, Y ≤ ±0.2 θ ≤ ±2˚ 2.0 0.7 ± 0.3 10˚ 0.25 0.3 MAX. 0.25 0.1 ± 0.1 3˚ 5˚ Chip position accuracy with respect to the package dimensions marked * X, Y ≤ ±0.2 θ ≤ ±2˚ KSPDA0163EA KSPDA0123EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2003 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4 Cat. No. KSPD1025E02 Dec. 2003 DN 5˚ 4.8 *