S4111

PHOTODIODE Si photodiode array S4111/S4114 series 16, 35, 46 element Si photodiode array for UV to NIR S4111/S4114 series are Si photodiode linear array mounted in ceramic DIPs (Dual Inline Packages). These photodiode arrays are primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light. Since all elements can be used with a reverse bias for charge storage readout, S4111/S4114 series are able to detect low level light with high sensitivity. Cross-talk between elements is minimized to maintain signal purity. Special filters can be attached as the input window. Features Applications l Large active area l Low cross-talk l Wide spectral response range l High UV sensitivity l Wide linearity l S4111 series: Enhanced infrared sensitivity, low dark current l S4114 series: Low terminal capacitance, high-speed response l Multichannel spectrophotometers l Color analyzers l Light spectrum analyzers l Light position detection s General ratings / Absolute maximum ratings Active area B et we en B et we en Dimensional (per 1 element) ele m e nts ele m e nts N u m b er Package outline/ of Effective m e a sure pitch W in do w Size ele m e nts area m aterial * (mm) (mm) (mm2) (mm) (mm) ➀/Q 16 18 pin DIP 1.45 × 0.9 1.305 ➁/R 40 pin DIP 35 ➂/Q 0.1 1.0 48 pin DIP 46 ➃/Q 4.4 × 0.9 3.96 40 pin DIP 35 ➂/Q 48 pin DIP 46 ➃/Q Absolute maximum ratings Reverse Operating Storage voltage temperature temperature VR Max. Topr Tstg (V) (°C) (°C) Type No. S4111-16Q S4111-16R S4111-35Q S4111-46Q S4114-35Q S4114-46Q 15 -20 to +60 -20 to +80 s Electrical and optical characteristics (Typ. Ta=25 °C, per 1 element, unless otherwise noted) S p ectral Peak response sensitivity range wavelength λ λp (nm) 190 to 1100 320 to 1100 190 to 1100 190 to 1000 800 (nm) 960 Rise time Shunt Terminal tr NEP resistance capacitance Rsh RL=1 kΩ λ=λp 200 n m 633 n m Ct λp VR=10 mV λ=655 nm V R =10 m V V R =10 V Min Typ. V R =0 V V R =10 V V R = 0 V V R =10 V V R = 0 V V R =10 V (A/W) (A/W) (A/W) (pA) (pA) (GΩ) (GΩ) (pF) (pF) (µs) (µs) (W/Hz 1/2 ) (W/Hz 1/2 ) 0.08 0.43 5 25 2.0 250 200 50 0.5 0.1 4.4 × 10 -16 1.7 × 10 -15 0.39 0.58 10 50 1.0 30 550 120 1.2 0.3 1.3 × 10 -15 3.1 × 10 -15 Dark current ID Max. 0.08 0.50 0.43 60 300 0.15 2 35 20 0.1 0.05 5.7 × 10 -15 8.0 × 10 -15 Photo sensitivity S Type No. S4111-16Q S4111-16R S4111-35Q S4111-46Q S4114-35Q S4114-46Q * Window material R: resin coating, Q: quartz glass 1 Si photodiode array s Spectral response (Typ. Ta=25 ˚C) 0.8 S4111/S4114 series s Photo sensitivity temperature characteristics +1.4 (Typ. ) TEMPERATURE COEFFICIENT (%/˚C) 0.7 +1.2 S4111 SERIES +1.0 +0.8 +0.6 +0.4 +0.2 0 -0.2 190 S4114 SERIES PHOTO SENSITIVITY (A/W) S4111-16Q/-35Q/-46Q 0.6 S4111-16R 0.5 0.4 0.3 0.2 0.1 0 190 S4114 SERIES 400 600 800 1000 1200 400 600 800 1000 1100 WAVELENGTH (nm) KMPDB0112EA WAVELENGTH (nm) KMPDB0113EA s Dark current vs. reverse voltage 100 pA S4114-35Q/-46Q (Typ. Ta=25 ˚C) s Terminal capacitance vs. reverse voltage (Typ. Ta=25 ˚C) 1 nF TERMINAL CAPACITANCE 10 pA S4111-35Q/-46Q S4111-35Q/-46Q DARK CURRENT 1 pA S4111-16Q/-16R 100 fA 100 pF S4111-16Q/-16R S4114-35Q/-46Q 10 fA 0.01 0.1 1 10 100 10 pF 0.1 1 10 100 REVERSE VOLTAGE (V) KMPDB0114EA REVERSE VOLTAGE (V) KMPDB0115EA s Example of cross-talk S4111 series (Ta=25 ˚C, l=655 mm, VR=0 V) S4114 series (Ta=25 ˚C, l=655 mm, VR=0 V) 100 100 RELATIVE SENSITIVITY (%) RELATIVE SENSITIVITY (%) 10 10 1 1 0.1 0.1 LIGHT POSITION ON ACTIVE AREA (500 mm/div.) KMPDB0015EA LIGHT POSITION ON ACTIVE AREA (500 mm/div.) KMPDB018EB 2 Si photodiode array s Dimensional outlines (unit: mm) ➀ S4111-16Q 22.86 ± 0.3 18.8 CH 1 ACTIVE AREA CH 16 15.9 18 17 16 15 14 13 12 11 10 PHOTOSENSITIVE SURFACE 0.5 ± 0.2 S4111/S4114 series ➁ S4111-16R 22.86 ± 0.3 18.8 CH 1 1.45 PHOTOSENSITIVE SURFACE 0.5 ± 0.2 ACTIVE AREA CH 16 15.9 18 17 16 15 14 13 12 11 10 7.49 ± 0.2 7.87 ± 0.3 1.45 7.49 ± 0.2 7.87 ± 0.3 7.62 ± 0.3 0.25 1234 INDEX MARK 5 6 7 8 9 1234 INDEX MARK 5 6 7 8 9 2.2 ± 0.3 0.9 ± 0.3 (4.5) (4.5) 0.46 2.54 0.46 2.54 P 2.54 × 8 = 20.32 P 2.54 × 8 = 20.32 KMPDA0135EA 0.9 ± 0.3 22.0 QUARTZ GLASS 0.5 2.2 ± 0.3 KMPDA0136EA ➂ S4111-35Q, S4114-35Q 50.8 ± 0.6 ACTIVE AREA 34.9 40 39 PHOTOSENSITIVE SURFACE ➃ S4111-46Q, S4114-46Q 65.0 ± 0.8 ACTIVE AREA 45.9 48 47 26 25 PHOTOSENSITIVE SURFACE CH 46 0.25 CH 1 4.4 4.4 22 21 CH 35 CH 1 15.5 ± 0.3 15.11 ± 0.25 15.24 ± 0.25* 0.25 a Type No. 15.11 ± 0.25 PIN No. 1 2 19 20 a PIN No. 1 2 23 24 2.8 ± 0.3 (4.5) 0.46 2.54 P 2.54 × 19 = 48.26 Type No. a (4.5) 3.0 ± 0.3 15.24 ± 0.25* a S4111-46Q 1.65 S4114-46Q 1.55 KMPDA0021EC 15.5 ± 0.3 0.46 2.54 P 2.54 × 23 = 58.42 S4111-35Q 1.45 S4114-35Q 1.35 KMPDA0019EC s Details of elements (for all types) a a S4111-16Q/16R 1.45 S4111-35Q/46Q S4114-35Q/46Q c b c 4.4 b 0.9 0.9 c 0.1 0.1 KMPDA0112EA 7.62 ± 0.3 6.5 0.25 3 Si photodiode array s P in connections Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 16-element 35-element 46-element type type type KC KC KC 2 2 2 4 4 4 6 6 6 8 8 8 10 10 10 12 12 12 14 14 14 16 16 16 KC 18 18 15 NC 20 13 20 22 11 22 24 9 24 26 7 26 28 5 28 30 3 30 32 1 32 34 34 36 NC 38 KC 40 35 42 33 44 31 46 29 KC 27 45 25 43 23 41 21 39 19 37 17 35 15 33 13 31 11 29 9 27 7 25 5 23 3 21 1 19 NC 17 15 13 11 9 7 5 3 1 S4111/S4114 series s Operating circuits ➀ In the most generally used circuit, operational amplifiers are connected to each channel to read the output in real time. The output of an operational amplifier is of low impedance and thus can be easily multiplexed. PHOTODIODE ARRAY MULTIPLEXER KMPDC0001EA ➁ I n the charge storage readout method, the charge stored in the junction capacitance of each channel, which is proportional to the incident light intensity, can be read out in sequence by a multiplexer. With this method, reverse voltage must be applied to the photodiodes, so S4111 and S4114 series are suitable. One amplifier is sufficient but care should be taken regarding noise, dynamic range, etc. ADDRESS PHOTODIODE ARRAY BIAS MULTIPLEXER KMPDC0002EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4 Cat. No. KMPD1002E06 Aug. 2006 DN