S4315-01

PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884, S4315 series Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise s G eneral ratings / Absolute maximum ratings Dimensional outline/ Window material *1 ➀ /K ➁ /L ➂ /L ➀ /K ➃ /K ➄ /K ➅ /K TO-5 TO-8 TO-18 l Spatial light transmission l Rangefinder Type No. Package A ctive area *2 size (mm) φ0.2 φ0.5 φ1.0 φ1.5 φ3.0 φ5.0 Effective active area (mm 2) 0.03 0.19 0.78 1.77 7.0 19.6 Absolute maximum ratings Storage Operating temperature temperature Tstg Topr (°C) (°C) S2381 S2382 S5139 S8611 S2383 S2383-10 *3 S3884 S2384 S2385 -20 to +85 -55 to +125 s E lectrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Excess Photo Quantum Break do w n C ut-off *4 Dark Spectral Peak *4 Temp. Terminal * 4 Noise Gain sensitivity efficiency voltage coefficient current *4 frequency response sensitivity capacitance figure *4 V BR M S QE ID range wavelength of fc ID =100 µA Ct λ =800 nm x M=1 M=1 Type No. V BR R L=50 Ω λp λ λ =800 nm λ =800 nm λ =800 nm Typ. Max. (V) (V) Typ. Max. (nA) (nA) 0.05 0.5 (MHz) (pF) S2381 1000 1.5 S2382 0.1 1 900 3 S5139 S8611 400 to 1000 800 0.5 75 150 200 0.65 0.3 S2383 0.2 2 600 6 S2383-10 *3 S3884 0.5 5 400 10 S2384 1 10 120 40 3 30 40 95 S2385 *1: Window material K: borosilicate glass, L: lens type borosilicate glass *2: Active area in which a typical gain can be obtained *3: This is a variant of S2383 in which the device chip is light-shielded by aluminum coating except for the active area *4: Measured under conditions that the device is operated at the gain listed in the specification table Note) The following different breakdown voltage ranges are available. S2381, S2382, S5139, S8611, S3884: -01 (80 to 120 V), -02 (120 to 160 V), -03 (160 to 200 V) S2381-10: -10A (80 to 120 V), -10B (120 to 160 V), -10C (160 to 200 V) (nm) (nm) (A/W) (%) (V/°C) 100 60 40 1 Si APD S2381 to S2385, S5139, S8611, S3884, S4315 series s Quantum efficiency vs. wavelength (Typ. Ta=25 ˚C, λ=800 nm) M=100 s Spectral response 50 100 (Typ. Ta=25 ˚C) PHOTO SENSITIVITY (A/W) 30 M=50 20 QUANTUM EFFICIENCY (%) 40 80 60 40 10 20 0 200 400 600 800 1000 0 200 400 600 800 1000 WAVELENGTH (nm) KAPDB0020EB WAVELENGTH (nm) KAPDB0021EA s Dark current vs. reverse voltage 10 nA (Typ. Ta=25 ˚C) s Gain vs. reverse voltage 10000 20 ˚C (Typ. λ=800 nm) S2384 1 nA 0 ˚C 1000 -20 ˚C DARK CURRENT S3884 S2383/-10 100 pA GAIN 100 10 pA S2381 S2382, S5139, S8611 40 ˚C 10 60 ˚C 1 pA 0 50 100 150 200 1 80 100 120 140 160 180 REVERSE VOLTAGE (V) KAPDB0016EC REVERSE VOLTAGE (V) KAPDB0017EC s Terminal capacitance vs. reverse voltage 1 nF (Typ. Ta=25 ˚C, f=1 MHz) s Excess noise factor vs. gain 10 (Typ. Ta=25 ˚C, f=10 kHz, B=1 Hz) M0.5 TERMINAL CAPACITANCE S2384 100 pF S2385 EXCESS NOISE FACTOR λ=650 nm M0.3 S3884 10 pF S2383/-10 S2382 S5139, S8611 S2381 1 pF M0.2 λ=800 nm 1 0 50 100 150 200 1 10 100 REVERSE VOLTAGE (V) KAPDB0018EC GAIN KAPDB0022EA 2 Si APD S2381 to S2385, S5139, S8611, S3884, S4315 series ➁ S5139 3.7 ± 0.2 1.5 LENS 4.65 ± 0.1 s Dimensional outlines (unit: mm) ➀ S2381, S2382, S2383/-10 5.4 ± 0.2 WINDOW 2.0 MIN. 4.7 ± 0.1 0.4 MAX. 0.45 LEAD 13 0.45 LEAD 0.4 MAX. PHOTOSENSITIVE SURFACE 2.8 PHOTOSENSITIVE SURFACE 2.8 2.54 ± 0.2 2.54 ± 0.2 1.2 MAX. 1.2 MAX. CASE CASE KAPDA0010EA 13 3.75 ± 0.2 5.4 ± 0.2 0.65 ± 0.15 KAPDA0018EA ➂ S8611 5.4 ± 0.2 4.65 ± 0.1 ➃ S3884 2.15 ± 0.3 4.7 ± 0.2 0.4 MAX. 2.8 (20) WINDOW 3.0 MIN. 9.1 ± 0.2 8.2 ± 0.1 4.5 ± 0.2 2.8 PHOTOSENSITIVE SURFACE 0.45 LEAD 0.45 LEAD 13 5.08 ± 0.2 2.54 ± 0.2 1.5 MAX. 1.2 MAX. CASE CASE KAPDA0031EA KAPDA0011EB ➄ S2384 9.1 ± 0.2 4.2 ± 0.2 ➅ S2385 13.9 ± 0.2 0.45 LEAD 0.4 MAX. (20) 7.5 ± 0.2 5.08 ± 0.2 INDEX MARK 1.4 1.0 MAX. 1.5 MAX. CASE The glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. CASE The glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. KAPDA0013ED KAPDA0012EA (15) PHOTOSENSITIVE SURFACE 0.5 MAX. 3.1 PHOTOSENSITIVE SURFACE 0.45 LEAD 2.8 4.9 ± 0.2 WINDOW 5.9 ± 0.1 8.1 ± 0.1 WINDOW 10.5 ± 0.1 12.35 ± 0.1 3 Si APD S4315 series TE-cooled type APD S4315 series Parameter APD 5 Effective active area * Spectral response range Peak sensitivity wavelength Symbol λ λp Condition S4315 S2381 φ0.2 S4315-01 S4315-02 S2382 S2383 φ0.5 φ1.0 400 to 1000 800 35 TO-8 S4315-04 S2384 φ3.0 800 Unit mm nm nm °C - M=60 M=100 Cooling temperature ∆T Package *5: Active area in which a typical gain can be obtained. We welcome your request for active areas different from those listed above. s Cooling characteristic of TE-cooler 40 (Typ. Ta=25 ˚C, thermal resistance of heatsink=3 ˚C/W) s Current vs. voltage characteristic of TE-cooler 1.6 1.4 (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) ELEMENT TEMPERATURE (˚C) 20 1.2 CURRENT (A) 0 1.0 0.8 0.6 0.4 -20 -40 0.2 -60 0 0.4 0.8 1.2 1.6 0 0 0.2 0.4 0.6 0.8 1.0 1.2 CURRENT (A) KAPDB0098EA VOLTAGE (V) KAPDB0100EA s Thermistor temperature characteristic 106 (Typ.) s Dimensional outline (unit: mm) 15.3 ± 0.2 14 ± 0.2 1.9 ± 0.2 WINDOW 10 ± 0.2 RESISTANCE (Ω) 105 104 0.45 LEAD 10.2 ± 0.2 5.1 ± 0.2 12 MIN. PHOTOSENSITIVE SURFACE 6.4 ± 0.2 103 -40 -20 0 20 ELEMENT TEMPERATURE (˚C) KIRDB0116EA DETECTOR (ANODE) DETECTOR (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR 5.1 ± 0.2 KAPDA0020EB HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)" which means developmental specifications. ©2010 Hamamatsu Photonics K.K. U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4 Cat. No. KAPD1007E09 May 2010 DN