S5377

PHOTODIODE Si PIN photodiode S5377/S4276 series Large area Si PIN photodiode for direct detection S5377/S4276 series are large-area photodiodes specifically designed for the direct detection of high-energy charged particles and X-rays. These detectors are mounted on PC boards with openings for the purpose of ∆E detection of charged particles. Other Si detectors and PSDs with different configurations, thicknesses and surface areas are also available upon request. Features Applications l Large area l Low dark current l Excellent about bias voltage tolerance l Heavy ions energy detection l X-ray detection l ∆E/E detection s Specifications / Absolute maximum ratings Type No. Chip Active area thickness (mm) S5377-04 S5377-05 S5377-02 S5377-03 S4276-02 S4276-03 28 × 28 (µm) 325 ± 15 280 ± 15 500 ± 15 450 ± 15 325 ± 15 280 ± 15 Dead layer thickness *1 Uniform Surface thickness orientation Front Rear side side (µm) (µm) (µm) 20 2 4.0 20 (111) 1.5 2 20 5.0 2 Absolute maximum ratings Reverse Operating Storage voltage Current temperature *2 temperature *2 VR Topr Tstg (V) (mA) (°C) (°C) 120 200 120 2 0 to +60 0 to +80 48 × 48 *1: Estimated value *2: No condensation s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Type No. S5377-04 S5377-05 S5377-02 S5377-03 S4276-02 S4276-03 Full depletion voltage VD Max. (V) 100 170 100 Dark current ID Typ. (nA) 10 60 30 200 20 200 Max. (nA) 50 300 150 1000 100 1000 Rise time *3 tr (ns) 70 40 100 Terminal capacitance Ct VR = VD f=100 kHz (pF) 300 320 190 200 860 900 *3: Rise time is the time required for transition from 10 % to 90 % of the peak output value. The light source is a dalta function pulse of a laser diode (800 nm) and the load resistance is 50 Ω.  Si PIN photodiode s Dark current vs. reverse voltage 50 (Typ. Ta=25 ˚C) S5377/S4276 series s Terminal capacitance vs. reverse voltage 1000 900 (Typ. Ta=25 ˚C) TERMINAL CAPACITANCE (pF) 40 800 700 600 500 400 300 200 100 S5377-02 S5377-05 DARK CURRENT (nA) S5377-05 30 20 S5377-02 10 0 0 20 40 60 80 100 120 140 160 180 200 0 0 20 40 60 80 100 120 140 160 180 200 REVERSE VOLTAGE (V) KPINB0235EA REVERSE VOLTAGE (V) KPINB0236EA s Dimensional outlines [unit: mm, tolerance unless otherwise noted: ±0.2, material of PCB: G10 (black)] S5377 series o28.0 S4276 series o48 3.0 MAX. 2.75 CATHODE ANODE 1.6 ACTIVE AREA 44.0 ± 0.2 RESIN FOR FIXING OF CHIP CATHODE 1.6 ACTIVE AREA (4 ×) R1.0 o27.0 ± 0.2 2.75 (4 ×) R1.0 44.0 ± 0.2 10.0 ANODE 3.0 61.0 ± 0.2 CATHODE 3.0 HOLE (4 ×) 2.3 ± 0.1 PROTECTION RESIN FOR AI WIRE HOLE (4 ×) 2.3 ± 0.1 HOLE ANODE 11.0 CATHODE 56.0 ± 0.2 WIRE PROTECTION RESIN 3.0 MAX. o45.0 ± 0.2 KSPDA0024EB 10.0 HOLE KSPDA0023EC s Reference T. MOTOBAYASHI, et al., “PARTICLE IDENTIFICATION OF HEAVY IONS WITH LARGE SILICON DETECTORS”, Nucl. Instr. Meth. A284 (1989) 526-528 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KPIN1058E01 Mar. 2001 DN