3.0SMCJ26CA

3.0SMCJ26CA

  • 厂商:

    HAMLIN

  • 封装:

  • 描述:

    Diode TVS Single Bi-Dir 26V 3KW 2-Pin SMC T/R

  • 详情介绍
  • 数据手册
  • 价格&库存
3.0SMCJ26CA 数据手册
TVS Diode Datasheet 3.0SMCJ Series Surface Mount – 3000W – DO-214AB RoHS Pb e3 Description The 3.0SMCJ Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Features Agency Approvals Agency Agency File Number E230531 Maximum Ratings and Thermal Characteristics (TA=25°C unless otherwise noted) Parameter Symbol Value Unit PPPM 3000 W Power dissipation on infinite heatsink at TC = 25 °C PD 6.5 W Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 3) IFSM 300 A Maximum Instantaneous Forward Voltage at 100A for Unidirectional Only VF 3.5 V Operating Temperature Range TJ -65 to 150 °C Storage Temperature Range TSTG -65 to 175 °C Typical Thermal Resistance Junction to Lead RθJL 15 °C/W Typical Thermal Resistance Junction to Ambient RθJA 75 °C/W Peak Pulse Power Dissipation by 10/1000μs Waveform (Fig.4)(Note 1), (Note 2) Notes: 1. Non-repetitive current pulse , per Fig. 4 and derated above TJ (initial) =25OC per Fig. 3. 2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal. 3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional component only, duty cycle=4 per minute maximum. ■ Excellent clamping capability ■ 3000W PPPM peak pulse power capability at 10/1000μs ■ Low incremental surge waveform, repetition rate (duty resistance cycles):0.01% ■ High temperature to reflow ■ For surface mounted soldering guaranteed: applications in order to 260°C/40sec optimize board space ■ VBR @ TJ= VBR@25°C x (1+αT ■ Low profile package x (TJ - 25)) (αT:Temperature Coefficient, typical value is ■ Typical failure mode is short 0.1%) from over-specified voltage or current ■ UL Recognized compound meeting flammability rating ■ Whisker test is conducted V-0. based on JEDEC JESD201A per its table 4a and 4c ■ Meet MSL level1, per J-STD-020, LF maximun peak ■ ESD protection of data lines of 260°C in accordance with IEC 61000-4-2,30kV(Air), 30kV ■ Matte tin lead–free plated (Contact) ■ Halogen free and RoHS ■ EFT protection of data lines in compliant accordance with IEC 61000■ Pb-free E3 means 2nd level 4-4 interconnect is Pb-free and ■ Built-in strain relief the terminal finish material is tin(Sn) (IPC/JEDEC J-STD■ Glass passivated chip junction 609A.01) ■ Fast response time: typically less than 1.0ps from 0V to BV min Applications TVS components are ideal for the protection of I/O Interfaces, VCC bus and other vulnerable circuits used in Telecom, Computer, Industrial and Consumer electronic applications. Functional Diagram Bi-directional Cathode Anode Uni-directional © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 08/17/21 TVS Diode Datasheet 3.0SMCJ Series Surface Mount – 3000W – DO-214AB Electrical Characteristics (TA=25°C unless otherwise noted) Part Number (Uni) 3.0SMCJ9.0A 3.0SMCJ10A 3.0SMCJ11A 3.0SMCJ12A 3.0SMCJ13A 3.0SMCJ14A 3.0SMCJ15A 3.0SMCJ16A 3.0SMCJ17A 3.0SMCJ18A 3.0SMCJ20A 3.0SMCJ22A 3.0SMCJ24A 3.0SMCJ26A 3.0SMCJ28A 3.0SMCJ30A 3.0SMCJ33A 3.0SMCJ36A 3.0SMCJ40A - Part Number (Bi) 3.0SMCJ5.0CA 3.0SMCJ6.0CA 3.0SMCJ6.5CA 3.0SMCJ7.0CA 3.0SMCJ7.5CA 3.0SMCJ8.0CA 3.0SMCJ8.5CA 3.0SMCJ9.0CA 3.0SMCJ10CA 3.0SMCJ11CA 3.0SMCJ12CA 3.0SMCJ13CA 3.0SMCJ14CA 3.0SMCJ15CA 3.0SMCJ16CA 3.0SMCJ17CA 3.0SMCJ18CA 3.0SMCJ20CA 3.0SMCJ22CA 3.0SMCJ24CA 3.0SMCJ26CA 3.0SMCJ28CA 3.0SMCJ30CA 3.0SMCJ33CA 3.0SMCJ36CA 3.0SMCJ40CA 3.0SMCJ43CA 3.0SMCJ45CA 3.0SMCJ48CA 3.0SMCJ51CA 3.0SMCJ54CA 3.0SMCJ58CA UNI BI Reverse Stand off Voltage VR (Volts) 3PDV 3PDX 3PDZ 3PEE 3PEG 3PEK 3PEM 3PEP 3PER 3PET 3PEV 3PEX 3PEZ 3PFE 3PFG 3PFK 3PFM 3PFP 3PFR - 3DDE 3DDG 3DDK 3DDM 3DDP 3DDR 3DDT 3DDV 3DDX 3DDZ 3DEE 3DEG 3DEK 3DEM 3DEP 3DER 3DET 3DEV 3DEX 3DEZ 3DFE 3DFG 3DFK 3DFM 3DFP 3DFR 3DFT 3DFV 3DFX 3DFZ 3DGE 3DGG 5.00 6.00 6.50 7.00 7.50 8.00 8.50 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 20.00 22.00 24.00 26.00 28.00 30.00 33.00 36.00 40.00 43.00 45.00 48.00 51.00 54.00 58.00 Marking Maximum Clamping Current Voltage V C @ Ipp IT (10/1000μs) MAX (mA) (V) Breakdown Voltage VBR (Volts) @ IT MIN 6.40 6.67 7.22 7.78 8.33 8.89 9.44 10.00 11.10 12.20 13.30 14.40 15.60 16.70 17.80 18.90 20.00 22.20 24.40 26.70 28.90 31.10 33.30 36.70 40.00 44.40 47.80 50.00 53.30 56.70 60.00 64.40 7.00 7.37 7.98 8.60 9.21 9.83 10.40 11.10 12.30 13.50 14.70 15.90 17.20 18.50 19.70 20.90 22.10 24.50 26.90 29.50 31.90 34.40 36.80 40.60 44.20 49.10 52.80 55.30 58.90 62.70 66.30 71.20 Test 10 10 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 9.2 10.3 11.2 12.0 12.9 13.6 14.4 15.4 17.0 18.2 19.9 21.5 23.2 24.4 26.0 27.6 29.2 32.4 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 69.4 72.7 77.4 82.4 87.1 93.6 Maximum Maximum Clamping Peak Pulse Voltage VC Current Ipp @ Ipp (10/1000μs) (8/20μs) (A) (V) 326.1 291.3 267.9 250.0 232.6 220.6 208.3 194.8 176.5 164.8 150.8 139.5 129.3 123.0 115.4 108.7 102.7 92.6 84.5 77.1 71.3 66.1 62.0 56.3 51.6 46.5 43.2 41.3 38.8 36.4 34.4 32.1 11.89 13.31 14.47 15.50 16.67 17.57 18.60 19.90 21.96 23.51 25.71 27.78 29.97 31.52 33.59 35.66 37.73 41.86 45.87 50.26 54.39 58.66 62.53 68.86 75.06 83.33 89.66 93.93 100.00 106.46 112.53 120.93 Maximum Maximum Maximum Agency Peak Pulse Reverse Temperature Approval Current Ipp Leakage IR coefficient of (8/20μs) @ VR VBR (%/C) (µA) (A) 1630.5 1456.5 1339.5 1250.0 1163.0 1103.0 1041.5 974.0 882.5 824.0 754.0 697.5 646.5 615.0 577.0 543.5 513.5 463.0 422.5 385.5 356.5 330.5 310.0 281.5 258.0 232.5 216.0 206.5 194.0 182.0 172.0 160.5 800 800 500 200 100 50 20 10 5 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 0.041 0.046 0.052 0.058 0.061 0.064 0.066 0.069 0.071 0.074 0.075 0.076 0.080 0.083 0.084 0.085 0.088 0.091 0.092 0.092 0.093 0.094 0.096 0.097 0.098 0.099 0.100 0.101 0.101 0.101 0.102 0.103 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X Notes: 1. VBR measured after IT applied for 300μs, IT= square wave pulse or equivalent. 2. Surge current waveform per 10μs/1000μs exponential wave and derated per Fig. 2 3. All terms and symbols are consistent with ANSI/IEEE C62.35 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 08/17/21 TVS Diode Datasheet 3.0SMCJ Series Surface Mount – 3000W – DO-214AB I-V Curve Characteristics Uni-directional I I Bi-directional Ipp Vc VBR VR IR VF IT IT IR Vc VBR VR V IR IT Ipp PPPM VR VBR VC IR VF VR VBR Vc V Ipp Peak Pulse Power Dissipation -- Max power dissipation Stand-off Voltage -- Maximum voltage that can be applied to the TVS without operation Breakdown Voltage -- Maximum voltage that flows though the TVS at a specified test current (IT) Clamping Voltage -- Peak voltage measured across the TVS at a specified Ippm (peak impulse current) Reverse Leakage Current -- Current measured at VR Forward Voltage Drop for Uni-directional Ratings and Characteristic Curves (TA=25°C unless otherwise noted) Figure 1: TVS Transients Clamping Waveform Figure 2: Peak Pulse Power Rating Voltage Transients PPPM-Peak Pulse Power (kW) 100 Voltage or Current Voltage Across TVS 10 Current Through TVS 1 TJ initial = Tamb 0.1 0.001 Time 0.01 0.1 1 10 td-Pulse Width (ms) © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 08/17/21 TVS Diode Datasheet 3.0SMCJ Series Surface Mount – 3000W – DO-214AB Figure 3: Peak Pulse Power Derating Curve Figure 4: Pulse Waveform 150 IPPM- Peak Pulse Current, % IRSM Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage % 100 80 60 40 20 tr=10µsec 0 25 50 75 100 125 150 TJ - Initial Junction Temperature (ºC) Half Value IPPM IPPM ( ) 2 50 175 Transient Thermal Impedance ( °C/W) Uni-directional V=0V Bi-direconal V=0V 1000 Uni-direconal V=VR Bi-direconal V=VR 10 1.0 0 2.0 3.0 4.0 100 10 1 0.1 0.01 1 1 10 100 0.001 1,000 0.01 0.1 1 10 100 1000 T P - Pulse Duraon (s) VBR - Reverse Breakdown Voltage(V) Figure 7: Maximum Non-Repetitive Peak Forward Surge Current Uni-Directional Only Figure 8: Peak Forward Voltage Drop vs Peak Forward Current (Typical Values) 500 100 450 IF- Peak Forward Current(A) IFSM - Peak Forward Surve Current (A) CJ(PF) td Figure 6: Typical Transient Thermal Impedance 100000 100 10/1000µsec. Waveform as defined by R.E.A t-Time (ms) Figure 5: Typical Junction Capacitance 10000 Peak Value IPPM 100 0 0 TJ=25°C Pulse Width(td) is defined as the point where the peak current decays to 50% of IPPM 400 350 300 250 200 150 100 10 1 0.1 50 0.01 0 1 10 Number of Cycles at 60 Hz 100 0.00 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 VF-Peak Forward Voltage(V) © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 08/17/21 TVS Diode Datasheet 3.0SMCJ Series Surface Mount – 3000W – DO-214AB Soldering Parameters Lead–free assembly - Temperature Min (Ts(min)) 150°C Pre Heat - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus Temp (TL) to peak 3°C/second max TS(max) to TA - Ramp-up Rate 3°C/second max - Temperature (TL) (Liquidus) 217°C Reflow - Time (min to max) (TS) 60 – 150 seconds Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C Reflow Condition tp TP Ramp-up Temperature (T) TL tL Ts(max) Ramp-down Ts(min) ts Preheat 25˚C t 25˚C to Peak Time (t) Physical Specifications Environmental Specifications 0.007 ounce, 0.21 grams Weight JEDEC DO214AB. Molded plastic body over glass passivated junction Matte Tin-plated leads, Solderable per JESD22-B102 Case Terminal Critical Zone TL to TP High Temp. Storage JESD22-A103 HTRB JESD22-A108 Temperature Cycling JESD22-A104 MSL JEDEC-J-STD-020, LEVEL 1 H3TRB JESD22-A101 RSH JESD22-A111 Dimensions DO-214AB (SMC J-Bend) Dimensions C A B H D E Inches Millimeters Min Max Min Max A 0.114 0.126 2.900 3.200 B 0.260 0.280 6.600 7.110 C 0.220 0.245 5.590 6.220 D 0.079 0.103 2.060 2.620 E 0.030 0.060 0.760 1.520 F - 0.008 - 0.203 G 0.305 0.320 7.750 8.130 H 0.006 0.012 0.152 0.305 F I 0.129 - 3.300 - J 0.094 - 2.400 - K J Dimensions in inches and L (millimeters) K - 0.165 - 4.200 L 0.094 - 2.400 - G I Solder Pads (all dimensions in mm) © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 08/17/21 TVS Diode Datasheet 3.0SMCJ Series Surface Mount – 3000W – DO-214AB Part Marking System 3.0SMCJ xx C A Cathode Band F (for Uni-directional products only) 5% VBR VOLTAGE TOLERANCE Littelfuse Logo XXX BI-DIRECTIONAL YMXXX VR VOLTAGE Marking Code Trace Code Marking Y:Year Code M: Month Code XXX: Lot Code SERIES Packing Options Part Number Component Package Quantity Packaging Option Packaging Specification 3.0SMCJxxXX DO-214AB 3000 Tape & Reel - 16mm tape/13” reel EIA-481 Tape and Reel Specification 0.157 (4.0) 0.63 (16.0) 0.315 (8.0) Optional 7” 7.0 (187) 13” 13.0 (330) 0.80 (20.2) Arbor Hole Dia. 0.65 (16.4) 0.059 DIA (1.5) Cover tape Dimensions are in inches (and millimeters). Direction of Feed Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 08/17/21
3.0SMCJ26CA
物料型号: - 3.0SMCJ系列,表面安装型,3000W,封装类型为DO-214AB。

器件简介: - 该系列瞬态电压抑制二极管专为保护敏感电子设备免受雷电和其他瞬态电压事件引起的电压瞬变而设计。

引脚分配: - 双向TVS二极管:阳极(Anode)和阴极(Cathode)。 - 单向TVS二极管:阳极(Anode)和阴极(Cathode)。

参数特性: - 最大脉冲功率耗散:3000W(10/1000μs波形)。 - 无限热沉上的功率耗散:6.5W。 - 单向TVS的最大峰值正向浪涌电流:300A。 - 单向TVS的最大瞬态正向电压:3.5V。 - 工作温度范围:-65℃至150℃。 - 存储温度范围:-65℃至175℃。 - 典型热阻(结到引线):15℃/W。 - 典型热阻(结到环境):75℃/W。

功能详解: - 3000W峰值脉冲功率能力,适用于表面安装应用。 - 低轮廓封装,典型失效模式为过电压或过电流导致的短路。 - 根据JEDEC JESD201A标准进行的晶须测试。 - 符合IEC 61000-4-2标准的数据线ESD保护,30kV(空气),30kV(接触)。 - 符合IEC 61000-4-4标准的数据线EFT保护。 - 内置的应变缓解,玻璃钝化芯片结,快速响应时间:从0V到最小击穿电压的典型时间小于1.0ps。

应用信息: - TVS组件非常适合保护电信、计算机、工业和消费电子应用中的I/O接口、VCC总线和其他易受攻击的电路。

封装信息: - 封装类型:DO-214AB(SMC J-弯曲)。 - 重量:0.007盎司,0.21克。 - 封装:JEDEC DO214AB,玻璃钝化结上覆盖模塑塑料体。 - 端子:镀锡引线,符合JESD22-B102标准的可焊性。

其他信息: - 符合UL认证,符合V-0级阻燃等级。 - 符合J-STD-020标准的MSL 1级,最高可达260°C的LF峰值。 - 符合RoHS指令,无铅,符合IPC/JEDEC J-STD-609A.01标准的第二级互连是无铅的,端子表面处理材料是锡(Sn)。
3.0SMCJ26CA 价格&库存

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