A2106AC3L

Balanced Three-chip SIDACtor Device Balanced Three-chip SIDACtor Device 1 The three-chip modified TO-220 SIDACtor balanced solid state device is designed for telecommunication protection systems that reference Tip and Ring to earth ground. Applications include any piece of transmission equipment that requires balanced protection. This device is built using Littelfuse’s patented “Y” (US Patent 4,905,119) configuration. 3 2 The SIDACtor device is used to enable equipment to meet various regulatory requirements including GR 1089, ITU K.20,K.21 and K.45, IEC 60950, UL 60950, and TIA-968-A (formerly known as FCC Part 68). Electrical Parameters VDRM Volts Part Number * VS Volts VDRM Volts Pins 1-2, 2-3 VS Volts Pins 1-3 VT Volts IDRM µAmps IS mAmps IT Amps IH mAmps CO pF P1553A_ 130 180 130 180 8 5 800 2.2 150 40 P1803A_ 150 210 150 210 8 5 800 2.2 150 40 P2103A_ 170 250 170 250 8 5 800 2.2 150 40 P2353A_ 200 270 200 270 8 5 800 2.2 150 40 P2703A_ 230 300 230 300 8 5 800 2.2 150 30 P3203A_ 270 350 270 350 8 5 800 2.2 150 30 P3403A_ 300 400 300 400 8 5 800 2.2 150 30 P5103A_ 420 600 420 600 8 5 800 2.2 150 30 A2106A_3 ** 170 250 50 80 8 5 800 2.2 120 40 A5030A_3 ** 400 550 270 340 8 5 800 2.2 150 30 * For individual “AA”, “AB”, and “AC” surge ratings, see table below. ** Asymmetrical General Notes: • All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range. • IPP is a repetitive surge rating and is guaranteed for the life of the product. • Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities. • VDRM is measured at IDRM. • VS is measured at 100 V/µs. • Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request. • Off-state capacitance (CO) is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias and is a typical value for “AA” product. “AB” and “AC” capacitance is approximately 2x the listed value. • Device is designed to meet balance requirements of GTS 8700 and GR 974. Surge Ratings Series IPP 2x10 µs Amps IPP 8x20 µs Amps A 150 150 90 50 45 20 500 B 250 250 150 100 80 30 500 C 500 400 200 150 100 50 500 http://www.littelfuse.com +1 972-580-7777 IPP 10x160 µs Amps IPP 10x560 µs Amps 2 - 34 IPP 10x1000 µs Amps ITSM 60 Hz Amps di/dt Amps/µs © 2004 Littelfuse, Inc. SIDACtor® Data Book and Design Guide Balanced Three-chip SIDACtor Device Thermal Considerations Package Symbol Modified TO-220 Value Unit Operating Junction Temperature Range -40 to +150 °C TS Storage Temperature Range -65 to +150 °C 50 °C/W Thermal Resistance: Junction to Ambient Data Sheets RθJA PIN 1 Parameter TJ PIN 3 PIN 2 IPP – Peak Pulse Current – %IPP +I +I IITT ISS IH IDRM -V -V +V +V V VTT V VDRM DRM V VS S Peak Value 100 tr = rise time to peak value td = decay time to half value Waveform = tr x td 50 Half Value 0 0 tr td t – Time (µs) -I -I V-I Characteristics tr x td Pulse Wave-form IH 8 6 25 ˚C 4 2 IH (TC = 25 ˚C) 10 Ratio of Percent of VS Change – % 14 12 0 -4 2.0 1.8 1.6 1.4 25 ˚C 1.2 1.0 0.8 0.6 0.4 -40 -20 0 -6 -8 -40 -20 0 20 40 60 80 100 120 140 160 Case Temperature (TC) – ˚C 20 40 60 80 100 120 140 160 Junction Temperature (TJ) – ˚C Normalized VS Change versus Junction Temperature © 2004 Littelfuse, Inc. SIDACtor® Data Book and Design Guide Normalized DC Holding Current versus Case Temperature 2 - 35 http://www.littelfuse.com +1 972-580-7777