AQ3045-01ETG

TVS Diode Array (SPA® Diodes) Low Capacitance ESD Protection - AQ3045 Series AQ3045 Series 0.35pF 30kV Bidirectional Discrete TVS RoHS Pb GREEN Description The AQ3045 includes back-to-back TVS diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes up to the maximum level specified in IEC 61000-4-2 international standard (±30kV contact discharge) without performance degradation. The back-to-back configuration provides symmetrical ESD protection for data lines when AC signals are present and the low loading capacitance makes it ideal for protecting high speed data lines such as HDMI,USB2.0, USB3.0 and eSATA. Pinout Features SOD882 1 2 (AEC-Q101 qualified) • E  SD protection of ±30kV contact discharge, ±30kV air discharge, (IEC 61000-4-2) •L  ow leakage current of 100nA at 5.3V (MAX) • EFT, IEC 61000-4-4, 40A (5/50ns) • Extremely low dynamic resistance (0.55 Ω TYP) • L  ightning, 3A (8/20μs as defined in IEC 61000-4-5 2nd edition) • AEC-Q101 qualified • Low capacitance of 0.35pF @ VR=0V (TYP) • PPAP capable Functional Block Diagram 1 • Halogen free, lead free and RoHS compliant • Moisture Sensitivity Level(MSL -1) Applications 2 • USB 3.0/USB 2.0/MHL • External Storage • MIPI Camera and Display • Ultrabooks, Notebooks • HDMI 2.0, DisplayPort 1.3, eSATA • Tablets, eReaders • Set Top Boxes, Game Consoles • Smart Phones Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. ©2019 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 02/28/19 • Small SOD882 packaging helps save board space • High Speed Serial Interfaces • Automotive applications TVS Diode Array (SPA® Diodes) Low Capacitance ESD Protection - AQ3045 Series Absolute Maximum Ratings Symbol Value Units PPK Peak Pulse Power (tP=8/20µs) Parameter 40 W IPP Peak Current (tp=8/20μs) 3.0 A TOP Operating Temperature -40 to 150 °C TSTOR Storage Temperature -55 to 150 °C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (TOP=25ºC) Parameter Symbol Test Conditions Min Typ Max Units VRWM IR=1uA - - 5.3 V Breakdown Voltage VBR IR=1mA 6.8 7.8 9.0 V Reverse Leakage Current ILEAK VR=5.3V -