TVS Diode Arrays (SPA® Diodes)
Enhanced ESD Discrete TVS Series - AQ3522-01FTG
SP3530
AQ3522-01FTG, 0.15pF 22kV Bidirectional TVS diode
RoHS Pb GREEN
Description
The AQ3522-01FTG integrates ultra low capacitance diodes
to provide protection for electronic equipment that may
experience destructive electrostatic discharges (ESD). This
robust component can safely absorb repetitive ESD strikes
above the maximum level specified in the IEC 61000-4-2
international standard (Level 4, ±8kV contact discharge)
without performance degradation. The extremely low
loading capacitance also makes it ideal for protecting high
speed signal pins such as V-By-One®, HDMI, USB3.0 and
USB2.0.
Pinout
Features
Pin 1
• ESD, IEC 61000-4-2,
±22kV contact, ±30kV air
• Facilitates excellent signal
integrity
• EFT, IEC 61000-4-4, 40A
(tP=5/50ns)
• PPAP capable
• Lightning, 2.5A (8/20μs as
defined in IEC 61000-4-5
2nd edition)
• Halogen free, Lead free
and RoHS compliant
• Low capacitance of
0.15pF (TYP) at 3GHz
Pin 2
Functional Block Diagram
• AEC-Q101 qualified
• Moisture Sensitivity Level
(MSL -1)
• ESD, ISO 10605, 330pF
330Ω, ±20kV contact,
±20kV air
Applications
• Ultra-high speed data
lines
• C
onsumer, mobile and
portable electronics
• USB 3.1, 3.0, 2.0
• Tablet PC and external
storage with high speed
interfaces
• HDMI 2.0, 1.4a, 1.3
• DisplayPort(TM)
• V-by-One®
• LVDS interfaces
• Automotive application
• Applications requiring
high ESD performance in
small packages
TVS Diode Arrays (SPA® Diodes)
Enhanced ESD Discrete TVS Series - AQ3522-01FTG
SP3530
Absolute Maximum Ratings
Symbol
Parameter
Value
IPP
Peak Current (tp=8/20μs)
2.5
Units
A
TOP
Operating Temperature
-40 to 150
°C
TSTOR
Storage Temperature
-55 to 150
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the component. This is a stress only rating and operation of the
component at these or any other conditions above those indicated in the operational
sections of this specification is not implied.
Electrical Characteristics - (TOP=25°C)
Parameter
Reverse Standoff Voltage
Symbol
VRWM
Test Conditions
IR=1μA
Min
Typ
Breakdown Voltage
VBR
IR=1mA
8.5
9.2
Reverse Leakage Current
ILEAK
VR=5V
0.02
0.1
μA
VC
IPP=2.5A, tp=8/20µs, I/O to GND
15.5
18
V
Dynamic Resistance2
RDYN
TLP, tp=100ns, I/O to GND
1.2
ESD Withstand Voltage1
VESD
Clamp Voltage1
Diode Capacitance
1,3
CI/O-GND
Max
5
Units
V
V
Ω
IEC 61000-4-2 (Contact)
±22
kV
IEC 61000-4-2 (Air)
±30
kV
Reverse Bias=0V, f= 3 GHz
0.15
pF
Note:
1. Parameter is guaranteed by design and/or component characterization.
2. Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns.
3. Package sizes larger than 0201 can add parasitic capacitance, inductance and resistance.
8/20μs Pulse Waveform
20.0
110%
18.0
100%
16.0
90%
14.0
80%
12.0
Percent of IPP
Clamp Voltage (VC)
Clamping voltage vs. IPP for 8/20μs waveshape
10.0
8.0
6.0
50%
40%
30%
4.0
20%
2.0
0.0
70%
60%
10%
1
1.5
2
Peak Pulse Current-IPP (A)
2.5
0%
0.0
5.0
10.0
15.0
Time (μs)
20.0
25.0
30.0
TVS Diode Arrays (SPA® Diodes)
Enhanced ESD Discrete TVS Series - SP3530
AQ3522-01FTG
Negative Transmission Line Pulsing (TLP) Plot
24
0
22
-2
20
-4
18
-6
16
TLP Current (A)
TLP Current (A)
Positive Transmission Line Pulsing (TLP) Plot
14
-8
-10
12
-12
10
-14
8
-16
6
-18
4
-20
2
-22
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
TLP Voltage (V)
-24
-40-38-36-34-32-30-28-26-24-22-20-18-16-14-12-10 -8 -6 -4 -2 0
TLP Voltage (V)
IEC 61000-4-2 +8 kV Contact ESD Clamping Voltage
IEC 61000-4-2 -8 kV Contact ESD Clamping Voltage
ISO10605 (C:330pF, R:330Ω) contact discharge plot at +8 kV
ISO10605 (C:330pF, R:330Ω) contact discharge plot at -8 kV
TVS Diode Arrays (SPA® Diodes)
Enhanced ESD Discrete TVS Series - AQ3522-01FTG
SP3530
Soldering Parameters
Pre Heat
Pb – Free assembly
- Temperature Min (Ts(min))
150°C
- Temperature Max (Ts(max))
200°C
- Time (min to max) (ts)
60 – 180 secs
Average ramp up rate (Liquidus) Temp (TL)
to peak
3°C/second max
TS(max) to TL - Ramp-up Rate
3°C/second max
Reflow
- Temperature (TL) (Liquidus)
217°C
- Temperature (tL)
60 – 150 seconds
Peak Temperature (TP)
260+0/-5 °C
Time within 5°C of actual peak
Temperature (tp)
20 – 40 seconds
Ramp-down Rate
6°C/second max
Time 25°C to peak Temperature (TP)
8 minutes Max.
Do not exceed
260°C
Part Numbering System
G= Green
T= Tape & Reel
Series
Number of
Channels
Critical Zone
TL to TP
Ramp-up
TL
TS(max)
tL
Ramp-do
Ramp-down
Preheat
TS(min)
25
tS
time to peak temperature
Time
Product Characteristics
AQ 3522 – 01 F T G
Automotive Grade
TVS Diode Arrays
(SPA® Diodes)
tP
TP
Temperature
Reflow Condition
Package
F: SOD323
Lead Plating
Matte Tin
Lead Material
Copper Alloy
Lead Coplanarity
0.004 inches(0.102mm)
Substrate Material
Silicon
Body Material
Molded Compound
Flammability
UL Recognized compound meeting
flammability rating V-0
Ordering Information
Part Marking System
FF *
F= Part code
F= Assembly code
* : Date code
Part Number
Package
Min. Order Qty.
AQ3522-01FTG
SOD323
3000
TVS Diode Arrays (SPA® Diodes)
Enhanced ESD Discrete TVS Series - AQ3522-01FTG
SP3530
Package Dimensions -SOD323
E
A1
A2
SOD323
D
b
Symbol
A
L1
Recommended Solder Pad
1.79
0.49
c
0.45
0.2
E1
1.14
2.28
Millimeters
Inches
Min
Max
Min
Max
A
0.80
1.00
0.031
0.039
A1
0.00
0.10
0.000
0.004
A2
0.80
0.90
0.031
0.035
b
0.25
0.35
0.010
0.014
c
0.08
0.15
0.003
0.006
D
1.20
1.40
0.047
0.055
E
1.60
1.80
0.063
0.071
E1
2.50
2.70
0.098
0.106
L1
0.25
0.40
0.010
0.016
2.77
Unit: mm
Embossed Carrier Tape & Reel Specification — SOD323
Symbol
,Ref.
,Ref.
Millimeters
A0
1.46+/-0.10
B0
2.90+/-0.10
W
8.0+0.3/-0.10
D0
1.50+0.10
D1
0.45min/1.15max
E1
1.75+/-0.10
E2
-
F
3.50+/-0.10
P0
4.00+/-0.10
P
4.00+/-0.10
P1
2.00+/-0.05
K0
1.25+/-0.10
T
0.254+/-0.02
,Ref.
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